負阻晶體管 的英文怎麼說

中文拼音 [fùzǔjīngtǐguǎn]
負阻晶體管 英文
dynistor
  • 負 : Ⅰ名詞1 （負擔） burden; load 2 （虧損） loss 3 （失敗） defeat Ⅱ動詞1 [書面語] （背） carry on th...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The exportation resistance of a device work device with what link after loading the resistance s the certain connections for should satisfying, in order to prevent mount to load the appearance produce the obvious influence. with each other connect to say to electronics equipments, for example after signal connect the enlarger, ex - class to connect class, only behind first - degree importation resistance before larger than first - degree exportation resistance 5 - 10 times are above, can think the resistance to match good ; connect the box come saying, electronics tube the machine should choose to use with for the enlarger its output to carry the mark to call the resistance the box for, but transistor enlarger then have noing this restrict, can take officing why resistance of equal or approximate box

    一件器材的輸出阻抗和所連接的負載阻抗之間所應滿足的某種關系，以免接上負載后對器材本身的工作狀態產生明顯的影響。對電子設備互連來說，例如信號源連放大器，前級連后級，只要后一級的輸入阻抗大於前一級的輸出阻抗5 - 10倍以上，就可認為阻抗匹配良好對于放大器連接音箱來說，電子管機應選用與其輸出端標稱阻抗相等或接近的音箱，而晶體管放大器則無此限制，可以接任何阻抗的音箱。
  2. Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized

    重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。
  3. Five different structures are described : standard transformer coupling, parafeed, resistively loaded stage capacitively coupled to the output transformer, tube ( valve ) based constant current source load capacitively coupled to the output transformer, and solid state ( mos fet ) constant current source load capacitively coupled to the output transformer

    我們將討論五種不同的方式：標準變壓器耦合；旁饋耦合；電阻性負載電容性耦合至輸出變壓器；膽恆流源負載電容性耦合至輸出變壓器；以及晶體管恆流源負載電容性耦合至輸出變壓器。
  4. Remember the following words and expressions : e. g. multimeter ； circuit ， current ； voltage ； resistance ； digital multimeter ； analogue multimeter ； analogue multimeter scales ； zero adjustment control ； zero adjustment control for resistance ranges ； measurement ranges switch ； transistor test socket ； meter probe ； positive terminal ； negative terminal ； anode ； cathode ； red lead ； black lead ； power supply ； connect in parallel ； connect in series

    記住萬用表、電路、電流、電壓、電阻、數字萬用表、模擬萬用表、表頭、機械零位調整器、歐姆零位調整器、量程選擇開關、晶體管插孔、表棒、正接線端、負接線端、陽極、陰極、紅導線、黑導線、電源、並聯、串聯等常用英文單詞，並逐步掌握。
  5. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  6. First of all, single port negative impedance oscillator is analyzed in the thesis. a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated. the substrate of the vco chip is gaas with dimension of 4. 4mmx3. 9mm

    本文首先對單埠負阻振蕩器進行了分析，給出了gunn二極體負阻振蕩器的設計方法，設計出了一個變容管調諧平面微帶gunn二極體vco晶元，該晶元以gaas為襯底，尺寸為4 . 4mm 3 . 9mm 。
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