負電阻效應 的英文怎麼說

中文拼音 [diànxiàoyīng]
負電阻效應 英文
negative resistance effect
  • : Ⅰ名詞1 (負擔) burden; load 2 (虧損) loss 3 (失敗) defeat Ⅱ動詞1 [書面語] (背) carry on th...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
  • : Ⅰ名詞(效果; 功用) effect; efficiency; result Ⅱ動詞1 (仿效) imitate; follow the example of 2 ...
  • : 應動詞1 (回答) answer; respond to; echo 2 (滿足要求) comply with; grant 3 (順應; 適應) suit...
  • 電阻 : (物質阻礙電流通過的性質) resistance; electric resistance (電路中兩點間在一定壓力下決定電流強度...
  • 效應 : [物理學] effect; action; influence
  1. The system parameters are developed at the same time, and some universal conclusions on the theoretical analysis of pll are reached. then, we have carried on analysis and research to the theory of differential delay ring voltage controlled oscillator ( vco ). on this basis, a improved differential delay ring vco with more efficient loads is described. this circuit has been designed and implemented in 0. 35 m cmos technology

    本文還對差分延遲結構環形壓控振蕩器路進行了深入的分析與研究,並提出了一種基於高質量路的主從差分延遲結構環形壓控振蕩器,其採用了一種新型的主從差分延遲結構,並用一個更有、更穩定的路結構來替代vco設計常使用的單個mos管結構,使其系統穩定性有了相提高。
  2. The main work and conclusion for this paper is as following : according to the flashover test results of several kinds of iced insulators under positive voltage and negative voltage, this paper obtained : for the single porcelain insulator, the single glass insulator and the composite insulator bridged completely by icicle, the metal cathode ' s strong ability of emission electron is the primary reason that results in the lower negative flashover voltage ; the position difference of the high resistance district in method anode side results in that porcelain insulator cluster and glass insulator cluster have an evident effect of polarity ; when less ice and no icicle at the brim of the sheds, due to numerous non - polar arcs on the composite surface, the effects of polarity of composite insulator was lost using the test method of the average flashover voltage in the freezing period, dc flashover performances were investigated of several insulators with some typical structures and different material

    本文的主要工作和結論如下:在人工氣候室內,根據不同覆冰絕緣子正、極性下的閃絡試驗結果,得出極性弧金屬陰極的強子發射能力造成了單片瓷、玻璃絕緣子及被冰凌橋接的合成絕緣子有較低極性冰閃壓;正極性弧金屬陽極側產生高區所處位置的差異使得瓷和玻璃絕緣子串具有明顯的極性;覆冰較少時,合成絕緣子表面出現數量較多的非極性弧使合成絕緣子無極性。利用覆冰期內平均閃絡壓的試驗方法,對不同材質和結構的絕緣子在覆冰、低氣壓和污穢共存環境中的直流閃絡特性進行了研究。試驗結果表明,直流平均閃絡壓隨著海拔的升高、覆冰量的增加以及污穢度的增加而降低,且其特徵指數與絕緣子結構、覆冰量、覆冰狀態、污穢度等有關。
  3. It was difficult to measure the load voltage directly between inner and outer conductor of cable induced by shield current under low flux x ray. this paper introduces a measurement, pouring a current, which was same as cable approximately photocurrent in x ray test, into the shield of cable with a triocoaxial system, and the load voltage was got. finally the measured result of typical cable and comparison with the calculation was given with a special load

    在簡要介紹屏蔽纜的轉移抗和轉移導納耦合的基礎上,描述了利用三同軸系統對雙纜和等載組成的纜系統進行流注入,模擬纜屏蔽層發射流,測量芯線等載感信號的實驗,給出實驗結果及分析,並對理論結果與實驗進行了比較。
  4. The product in essence soft and comfortable. adsorption of bamboo charcoal can all smell, tidal ; the far - infrared effects can promote blood circulation, and block harmful electromagnetic radiation ; anshen and promote human blood circulation, and has super insulation characteristics. living in the negative ion penetration, to relax and reduce fatigue

    本產品本質柔軟舒適,竹炭可吸附各種異味、潮氣;產生的遠紅外線能促進血液循環、隔有害磁波的輻射;安神、促進人體血液循環.產生的離子居於穿透作用,能夠鬆弛神經、消除疲勞。
  5. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型,採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析,研究了溫度和結構參數對器件特性的影響,表明兩種器件的擊穿特性均沒有現象,擊穿壓分別達到85v和209v ,由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ;同時,研究了sic場晶體管的製作工藝,初步得到了一套製造sicmosfet器件的製造工藝流程,研製出了4h - sicmosfet器件。
  6. The main works are listed as follows : ( 1 ) based on the excitation of bi - directional current pulse technique, a new measuring circuit for weak variation of resistance was proposed for electrical resistance tomography. traditional ac current source is n ' t adopted as the exciting source. through fast bi - directional current switching, the polarization effects are eliminated

    路主要優點如下:該路沒有採用傳統的交流流激勵法作為系統的設計原理,而是通過快速的正極性流切換來削弱直流流激勵時激勵極的極化,使通過直流法來測量氣液兩相流的微弱變化成為可能。
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