起凹槽 的英文怎麼說
中文拼音 [qǐāocáo]
起凹槽
英文
fluted roller-
In the process of work, according to complex geological conditions such as huge thick soft clay in site and top surface of possible pile foundation supporting course fluctuating in large amplitude, we adopted many advanced exploratory methods ( just as high accuracy exploration of shallow earthquake, crosshole wave velocity test, vane shear test, pressuremeter test, etc. ), we found out that there is an ancient groove of yangzi river in former plant site, therefore we suggested in time that plant site should properly be moved eastwardly, only this item saved nearly about 50 million for pile foundation project cost
在工作過程，根據廠址區軟粘土厚度大、可能作為樁基持力層頂面起伏變化大等復雜地質條件，採取了多種先進的勘探手段（如高精度淺層地震勘探、跨孔波速試驗、十字板剪切試驗、旁壓試驗等） ，查明了原廠址區存在一個長江古凹槽，並及時建議廠址適當東移，僅次一項就節省樁基工程費用近5000萬元。" the central groove shows that the tail of the animal was not buoyed up or supported by water and striations on the side of the groove show that motion was jerky
他說： 「中間的凹槽顯示，這只水蝎的尾巴並沒有浮起來或者被水支撐著而凹槽旁邊的一些條痕則說明，它運動得並不平穩。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
分享友人