超大規模集成 的英文怎麼說

中文拼音 [chāodàguīmójíchéng]
超大規模集成 英文
extra large scale integration
  • 超 : Ⅰ動詞1 （越過; 高出） exceed; surpass; overtake 2 （在某個范圍以外; 不受限制） transcend; go beyo...
  • 規 : Ⅰ名詞1 （畫圓形的工具） instrument for drawing circles 2 （規則; 成例） rule; regulation 3 [機械...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 超大 : extra large, extra long （xl）
  • 規模 : scale; scope; dimensions
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  1. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  2. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  3. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  4. Pll frequency synthesizer is increasingly used in microprocessor systems and communication. with the development of integrated circuits and the emergence of soc ( system on a chip ) technology, it has been a fundamental and very important module in analog and mixed - signal integrated circuits

    鎖相環頻率合成器現在日益廣泛地應用於通訊、微處理器系統中，並且隨著集成電路的發展以及soc技術的出現，其已經成為超大規模集成電路中不可或缺的模塊。
  5. Computers built after 1972 are often called " fourth generation " computers, based on lsi ( large scale integration ) of circuits. later developments include vlsi ( very large scale integration )

    1972年以後的計算機習慣上被稱為第四代計算機。基於大規模集成電路，及后來的超大規模集成電路。
  6. Advances in vlsi will have a profound effect on the world economy, because vlsi is the key technology for the information age.

    超大規模集成電路的進展將對世界經濟發生很大影響，因為它是信息時代的關鍵技術。
  7. However, implantation, with its obvious advantages, will continue to play a major role in vlsi in the foreseeable future.

    然而，注入方法以它顯然的優點，在不久的將來將繼續在超大規模集成電路中起主要的作用。
  8. Emerging trends in vlsi test and diagnosis

    超大規模集成電路測試和驗證的發展趨勢
  9. Vxi - based mixed mode vlsi vxi

    介面混合式超大規模集成電路測試系統
  10. Analysis and study on the noises in digital visi circuits

    數字超大規模集成電路中的噪聲分析與研究
  11. Copper electrodeposition in ulsi

    超大規模集成電路中的電沉積銅
  12. The background of commercial vlsi in military use is analyzed

    介紹了美、歐、日、韓今後發展超大規模集成電路的對策。
  13. The theory of rectilinear embeddings of graphs has been used in the design of vlsi

    摘要縱橫嵌入的理論已被用在超大規模集成電路的設計中。
  14. Influence of interconnection configuration on thermal dissipation of ulsi interconnect systems

    超大規模集成電路互連系統的布線構造對散熱的影響
  15. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  16. A larger market leads to mass production, economies of scale in manufacturing, vlsi implementations, and other benefits that decrease price and further increase acceptance

    一個更大的市場帶來大規模的生產、製造業的規模經濟、超大規模集成電路實現等等一系列可以降低成本、曾加產品接受度的好處。
  17. Not only the scan route solution, the built - in self - test solution and the boundary scan solution of design for testability are summarized, but also the applications and countermeasures of these 3 solutions are analysed and compared in details

    摘要綜述了超大規模集成電路的幾種主要的可測試性設計技術，如掃描路徑法、內建自測試法和邊界掃描法等，並分析比較了這幾種設計技術各自的特點及其應用方法和策略。
  18. Very large scale integration

    超大規模集成化
  19. Ultralarge scale integration

    超大規模集成化
  20. ( 1 ) dvb adopts efficient compress, data transportation and vlsi technologies, which makes the standard used by more and more countries

    （ 1 ） dvb採用了高效數據壓縮技術、數據傳輸技術及vlsi （超大規模集成）技術，使其成為越來越多國家所採用的標準。
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