超高功率 的英文怎麼說

中文拼音 [chāogāogōnglǜ]
超高功率 英文
ultra high power
  • 超 : Ⅰ動詞1 （越過; 高出） exceed; surpass; overtake 2 （在某個范圍以外; 不受限制） transcend; go beyo...
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 功 : 名詞1 （功勞） exploit; merit; meritorious service [deed]: 戰功 military exploits; 立功 render me...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 超高 : 1 （鐵路彎線的外軌加高） superelevation2 （船的出水高度） freeboard; freeboard height3 super high...
  1. This system uses a ring structure instead of complex multiangular optics structure. stimulate raman scatter is used to combine laser beam and it also improve the quality of laser beam

    採用這個激光能量儲存環技術能提高準分子激光放大超短脈沖激光的效率，獲得高功率，高束質的激光輸出。
  2. With the rapid development of the semiconductor technology, large of the vacuum electronic device has replaced by the semiconductor element from the middle period of the last century. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and wide frequency band and high power field, especially in the exceed - high power field. the complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被半導體器件取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  3. From the middle - later period of the last century, with the rapid development of the semiconductor technology, large of the vacuum electronic device was replaced by the semiconductor element. however, the vacuum electronic device owns tremendous prepotency in the exceed - high frequency and high power field. this complexion won ’ t be changed for a long period

    自上世紀中後期開始，隨著半導體技術的飛速發展，許多真空電子器件逐步被其取代，但是，在超高頻、寬頻帶、大功率，尤其是超大功率領域，真空電子器件在技術和經濟方面至今仍擁有巨大的優勢，而且在今後相當長的時期內，這種局面也不會改變。
  4. Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )

    半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。
  5. In the first chapter, the high power microwave device development process was reviewed, the physical mechanisms underlying superradiance phenomenon based on cherenkov radiation expounded and the research activities in this field, both in and out of china, summarized

    首先簡述了高功率微波器件的發展歷程和切倫柯夫超輻射機理，比較詳細介紹了國內外在這一領域的研究狀況。
  6. With the developing of new switches such as photoconductive switch and sos ( solid opening switch ), both high power and high gain can be got by the uwb antenna array

    隨著各種新型開關如大功率的光導開關的研究成功，超寬帶天線陣列將成為實現高功率、高增益的有效途徑。
  7. The numerical calculation simulation shows that the fgb will change its shape upon propagation. ( 5 ) using the quasi - discrete hankel transform ( qdht ), the fast calculation code simulating the propagation of cylindrical symmetry laser beams passing through high power laser amplifier system is built up for the first time. the code is applied to

    （ 3 ）明準訴散漢克爾變換編制寧旋轉對稱光束在高功率激光放大系統中傳輸的快冰汁彝摸擬程序，利用該程序對超高斯光束在多麟光放大系統中的傳輸和神光紅栩櫥化光傳。
  8. Spectral gain narrowing compensation modulation function in high - power ultrashort - pulse laser systems

    高功率超短脈沖激光系統中光譜增益窄化補償的調制函數
  9. Abstract : the shaped technique of the electric arc tube s shell with neck, which is used in the small power metal - halide lamp, is introduced in this paper

    摘要:超小功率高強度氣體放電燈電弧管電極極間距誤差要求小，二電極對中要求高，所以採用在電弧管泡殼兩端加縮頸來定位電極。
  10. High power led on 1156 socket. applications including plug - and - play light automobile direction

    1156基座型超高功率led ，應用包含車用方向燈，隨插即用，方向燈閃爍頻率維持正常。
  11. A composite electrode material comprising carbon nanotube and transition metal oxide may meet both the powerand the energy requirements. the properties of supercapacitor utilizing carbon nanotube as electrode material are studied

    通過充分利用其較大的比表面積和適宜的孔徑，可望得到大容量、高功率的超級電容器，與過渡金屬氧化物復合更能提高其綜合性能。
  12. The transmission characteristics of the inverted telescope, and the influence of beam quality, beam parameter and light system parameter are analyzed with lens beam transmission theory and definition of the beam quality factor m ^ 2, and a rational explanation of the active focal depth is obtained

    摘要利用透鏡光束傳輸規律和光束質量因子平方公尺的定義，闡述倒置望遠鏡導光系統在超重超大工件高功率激光加工中的傳輸特性，以及光束質量、光束參數、導光系統參數在加工范圍內對穩定加工質量的影響，並對有效焦深給出一個更合理的解釋。
  13. 36w / 50w high power led becon light. outdoor usage power

    50w led超高功率投射燈，戶外可使用。
  14. Ultra high powr graphite electrode

    超高功率石墨電極
  15. Uhp graphite electrodes

    超高功率石墨電極
  16. Analysis of electromagnetic field and electromagnetic torque performance on super high power density induction motor

    超高功率密度感應電機電磁場及轉矩特性分析
  17. Supercapacitors, a new energy storage components between batteries and electrostatic capacitors, when work with batteries, can meet the high power out - put need of electric vehicles when starting - up or acceleration for their power density could be tens times higher than that of batteries

    超級電容是一種介於電池和靜電電容之間的新型儲能元件，其功率密度比電池高數十倍，能量密度比靜電電容高數十倍。利用超極電容和電池組成混合動力系統，能夠很好的滿足電動汽車啟動、加速等高功率密度輸出場合的需要。
  18. The supercapacitor is a new type of electrochemical energy storage devices between rechargeable batteries and traditional electrostatic capacitors, and it has high power density, high charge / discharge efficiency and long cycle life

    超大容量電贗電容器是一種性能介於電池和傳統靜電電容器之間的新概念高功率儲能器件，具有功率密度大、充放電效率高、循環壽命長等特點。
  19. Supercapacitors, new energy storage components between batteries and electrostatic capacitors, could meet the high power need of electric vehicles when starting - up or accelerating for their power density could be tens of times higher than batteries

    超級電容器是一種介於電池和靜電電容器之間的新型儲能元件，其功率密度比電池高數十倍，能夠滿足電動汽車啟動、加速等高功率輸出的需要。
  20. By using these mode - locking devices on novel thin - disk solid state lasers and optically pumped vertical - external - cavity surface - emitting semiconductor lasers ( opsvf. csel ) to obtain high average output power ultrashort pulses are stated, and it is emphasized that the study of high average output power ultrashort pulses laser can be accelerated greatly by using the quantum dot sesam

    綜述了利用半導體可飽和吸收鏡被動鎖模薄片式固態激光器及光泵浦垂直外腔面發射半導體激光器，獲得高平均輸出功率超短脈沖的最新進展，並指出量子點半導體可飽和吸收鏡的使用將加速超短高功率脈沖的發展。
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