躍遷能 的英文怎麼說

中文拼音 [yuèqiānnéng]
躍遷能 英文
transition energy
  • 躍 : 動詞（跳） leap; jump
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 能 : 能名詞（姓氏） a surname
  1. Energies and transition rates of low - lying excited states for beryllium

    鈹低激發態的能量和躍遷幾率
  2. Both ionization and excitation lead to electronic transitions that may be the emission of light.

    電離和激發都將導致可能伴隨有光發射的電子躍遷。
  3. E 0, 15mev evaluation of surface contamination. part 3 : isomeric transition and electron capture emitters, low energy beta - emitters e beta max inferior to 0, 15 mev

    表面污染的評估.第3部分:同質異能躍遷和電子俘獲發射器，低能量發射器
  4. Detectors ( contd. ) : vertical vs. in - plane geometries. quantum well intersubband photodetectors

    垂直與平面結構。量子井次能帶間躍遷型光偵測器。
  5. The indirect optical gaps of ce02 - tioa complex films induce the absorption edges wavelengths red shift so that the films have excellent properties of ultraviolet absorbing

    由於混合薄膜間接躍遷的能隙較小，導致了吸收邊向紅外區遷移，使薄膜有很好的紫外線吸收功能。
  6. Dipole transition energy and oscillator strengthof the 1s22s - 1s2np for mn22 ion

    的偶極躍遷能和振子強度
  7. The research for the binding energy of d - centers is important to the transition energy and the optical and the magneto - optical absorption of shallow center d - there have been some theoretical and experimental investigations [ 1, 4, 5, 6, 7, 8 ] about three - dimensional and two - dimensional d - centers in magnetic field, but have no works discussed the d ~ centers in quantum wells in the strong magnetic field limited

    研究d ~ -中心各個態的束縛能，對于研究d ~ -中心各能級之間的躍遷和d ~ -中心的光學和磁光吸收、新型器件的研製與開發都有很大的意義。
  8. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  9. The significant feature of the system model is that the two - dipole moment is in the v configuration. of the two dipole allowed transitions, one is very strong while the other is very weak

    系統模型的特徵是，三能級系統中電偶極躍遷構成v型結構，其中一個躍遷很強，另一個躍遷很弱。
  10. The absorption of this radiation in various lines followed by cascade transitions to lower levels might ultimately produce an anomalously high population for the excited levels of these molecules.

    在各譜線處對這種輻射的吸收以及接著向低能級的級聯躍遷最終可能使這些分子的激發能級產生異常高的粒子數。
  11. Abstract : we have studied theoretically a beat effect in a four - level system due to fifth - order optical polarization, and considered the cases that the pump beams have either narrowband or broadband linewidth. we have found that the accuracy for the energy - level splitting measurement is determined by the homogeneous linewidths of the optical transitions. that is to say, this technique can achieve doppler - free precision in the measurement of the energy level splitting between two excited states which are dipolar forbidden from the ground state

    文摘:研究了四能級系統中基於五階極化的拍頻效應，考慮了抽運光束為窄帶線寬或寬帶線寬的情形.發現其對能級分裂的測量精度決定於光學躍遷的均勻增寬.也就是說，這種技術在測量與基態是偶極禁戒躍遷的兩激發態之間的能級分裂時，可得到消除多普勒增寬的精度
  12. We obtain a new quark potential from the effective dilaton - gluon - coupling inspired by superstring theory, and by using this static potential, we explore the mechanism of quark confinement through calculations of the spin - average energy levels, the widths of the leptonic decays and radiative transitions for heavy quarkonium. the obtained results are compared with that of the cornell potenial

    由規范場理論的超弦理論所激發的伸縮子一膠子有效藕合，給出了一個新的靜態夸克一反夸克勢，討論了此勢模型下重介子的自旋平均能譜、輕子衰變和輻射躍遷寬度，並與cdrn叭勢模型所得到的相應結果作了比較
  13. The investigation of the exciton - phonon coupling of nn3 center offers a direct proof that all the phonon replicas are the phonon sidebands governed by the huang - rhys " multiphonon optical transition theory, and clarifies the speculations that the replicas associated with optical phonons are independent bound states of exciton - phonon complexes or due to other alternative mechanisms

    對其變溫pl譜的研究還發現，在nn :的聲子伴線區域呈現出的異于多聲子光躍遷理論的現象，說明在該區域可能存在著其它的n雜質態。
  14. The luminescence theorem of aluminates strontium is studied, too. ce transfers energy to tb in ce and tb co - activated phosphors. light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo, host lattice

    鉚對錨有能量傳遞和敏化作用，該磷光體的光發射是杴的4f 4ffh于躍遷發射的結果：其餘輝特性與鋁酸鋸晶格的電子陷階等有關。
  15. The fluorescence intensity of pb became weak when the crystal phase began to form in tha the lattice vibration absorbed the energy induced by the fluorescent transition

    隨著體系中晶態的生成， pb離子進入晶格中，由於晶格振動所產生的聲子吸收了躍遷回落產生的發光能量， pb離子的熒光強度明顯下降。
  16. The weak control field is coupled with the weak transition, which is separated into two transitions from an auxiliary into either of the two dressed states in the dressed states representation

    弱控制場與裸原子強躍遷進行耦合，在修飾態表象中，控制躍遷分裂為從輔助能級到兩個修飾態的兩個躍遷。
  17. A typical model is the atomic barium in which the state 6s 1s0 corresponds to the ground state and the states 6s6p 1p1 and 6s6p 3p1 correspond to the excited states of strong and weak transition, respectively. the decay rates of the excited states are 47khz and 19mhz, respectively, and the ratio of them is 400

    原子ba是一個典型的系統（其中能級6s ~ 1s _ 0為基態， 6s6p ~ 1p _ 1和6s6p ~ 3p _ 1分別是上述強躍遷和弱躍遷的激發能級，兩個躍遷的自發衰減速率分別為47khz和19mhz ，兩者之比為400 ） 。
  18. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  19. The energy level structures of the 4d core excited configuration 4d 5s25p5, final radiative configuration 4d105s25p4 and final auger configurations 4d105s25p3 and 4d105s15p4 of csv ion and all possible decay dynamics processes related to these configurations are all determined by mcdf method. we also compared the present results of radiative transition, oscillator strength and the line width with the results obtained by experimental spectra and the quasi - relativistic configuration interaction method and got a good agreement. we also make prediction for some dominant features of the auger electron spectrum emitted by the auger decay process of the 4d95s25p6 core excited states

    論文第三章中詳細的介紹了cs離子的4d內殼層電子激發組態4d ~ 95s ~ 25p ~ 5 、輻射末態4d ~ （ 10 ） 5s ~ 25p ~ 4及auger末態4d ~ （ 10 ） 5s ~ 25p ~ 3和4d ~ （ 10 ） 5s5p ~ 4的能級結構及各種可能的輻射和auger衰變過程，獲得了與已有的實驗結果和相關的半經驗準相對論組態相互作用計算結果相符的輻射躍遷能、振子強度以及線寬，預言了4d ~ 95s ~ 25p ~ 5態的以auger衰變為主的auger電子譜的特性。
  20. So the conductive behavior in ac field was equivalent with the parallel connection of a resistor and a capacitor, the nonlinearity of v - i characteristics originate from a combination of the implication of the nonlinear contribution of tunnel conduction between graphite particles and the production of additional conducting pathways under sufficiently strong local fields, which is the function of the gap between graphite particles and has a relation with the transition ability of electrons

    導電瀝青混凝土的導電行為則可用隧道效應進行分析，交變電場中的導電行為可等效為電阻r和電容c並聯，非線性v - i特性產生於隧道效應時粒子間的非線性導電和高電場時誘發額外的導電通路，二者是粒子間隙的函數，與電子躍遷能力有關。
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