載流子壽命 的英文怎麼說
中文拼音 [zǎiliúzishòumìng]
載流子壽命
英文
carrier lifetime-
Measurement of minority carrier life time in germanium by photoconductive decay method
用光電導衰減法測定鍺中少數載流子壽命Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
硅和鍺體內少數載流子壽命測定光電導衰減法Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method
半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed
從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
用光電導衰減法測量硅單晶中少數載流子的壽命However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened
為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。We define the recombination time of excess electrons in p field as the minority carrier lifetime. in theory, we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover, the effect of capacitance to general open - circuit voltage is also investigated. both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells, which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
根據太陽電池的工作原理，詳細地論述了用脈沖光源照射n / p結太陽電池時光電壓的產生，理論上給出了注入p區的電子復合帶來的開路電壓與少子壽命的關系，也研究了n / p結勢壘電容放電對開路電壓衰減的影響關系，推導了利用開路電壓隨時間衰減的關系來測量少數載流子壽命的理論公式。In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。However, the switching power loss of si p - i - n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au, pt or radiation to lower the stored charge ( qs )
但是，其開關功耗隨著開關頻率的提高而增大以至於不得不採用壽命控制技術（摻金、鉑和輻照等）來降低少數載流子壽命從而降低開關功耗。For the material characteristics limitation of si, the switching power loss of si pin diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au, pt or radiation to lower the stored charge ( q., )
Sipin二極體由於其材料特性的局限性，使開關功耗隨開關頻率的提高而增大，通常採用壽命控制技術（如摻金、鉑和輻照等）降低少數載流子壽命從而降低開關功耗。The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost
與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。The degradation and lifetime model is deeply discussed, dynamic and static stress suffered by devices and circuits are compared and analyzed. a modified model for lc is proposed for better fitting the experimental data and the substrate current model parameters eerit and lc, degradation parameter h, m, n are extracted by the static stress experiment results
詳細分析討論了mosfet的壽命與退化模型，並對電路中器件所受的動態應力與直流靜態電應力進行了分析比較：根據實驗結果改進了有效導電長度l _ c模型；應用直流電應力實驗數據進行了襯底電流模型中載流子速度飽和電子科技大學博士論文臨界電場e ； 、有效導電長度lc以及退化參數h 、 m和n的提取。Agrawal ' s theory model of soa ca n ' t simulate accurately the amplified signal pulse shape in soa when the pulse width is as short as several picosecond. so we simulate accurately the peak power, full width half maximum, rising time and falling time of amplified pulse after considering the gain compression, gain asymmetry, gain shift, gain variable with situation and time. with ultrahigh velocity dense wavelength division multiplexing ( dwdm ) and optical time division multiplexing ( otdm ) developing, we demand more and more short signal pulse and more signal channels
但當信號脈沖的寬度只有幾個皮秒時， soa傳統的agrawal理論模型已經不能完全準確地模擬soa對信號脈沖的放大情況，在此基礎上，我們在全面考慮soa的增益壓縮、增益非對稱和漂移、增益隨位置和時間變化的載流子壽命等物理機制的情況下，對皮秒超短高斯信號光脈沖經soa放大后的脈沖的峰值功率、脈沖半值全寬度、脈沖的上升時間和下降時間等重要物理參量進行了準確模擬和詳細研究。On the basis of experiments of breakdown and reliability of pcss, the mechanism of carriers propagating is deeply studied, and the breakdown characteristics and degeneration mechanism are analyzed in the theory
通過對非線性pcss 』 s載流子輸運機制的深入研究，結合開關的擊穿和壽命實驗，對pcss 』 s擊穿機制及性能退化機理在理論上作了分析。Experimental results indicated that for the two reverse - bias stresses the degradation of the devices depended on magnitude and energy of the injected carriers. fc stress condition may speed up the degradation of devices and shorten the time of evaluating the devices life
在實驗中我們發現對這兩種應力，器件的退化與注入的熱載流子的數量以及能量有關， fc應力方法可以加速器件的退化，縮短評估器件壽命的時間。分享友人