載電流導體 的英文怎麼說

中文拼音 [zǎidiànliúdǎo]
載電流導體 英文
current-carrying conductor
  • : 載Ⅰ名詞(年) year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
  • : 體構詞成分。
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極是利用金屬與半之間接觸勢壘進行工作的一種多數子器件,與普通的pn結二極相比,它具有正向壓低,響應速度快等優良特性。
  2. Carries created by ultra - fast laser pulse accelerate in the field of the photoconductor and form a transient photocurrent. the shape of the photocurrent lies on the movement of the carriers, as well as the movement of the carrier ' s lies on the field in the photoconductor

    中的子在光內的運動情況決定了所輸出脈沖的波形,而子的運動是在光內部場的作用下進行的,所以光內的場對光開關的性能有顯著的影響。
  3. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    si器件相比,採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的子遷移率,更大的跨,更強的驅動能力以及更快的路速度等等。
  4. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件,它將soi材料和sige材料結合在一起,與傳統硅器件相比,表現出子遷移率高、驅動能力強、跨大、寄生效應小等優勢,特別適用於高性能、高速度、低功耗超大規模集成路。
  5. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    學性能,發現生長態的mncd晶均為p型半。隨著組分x值的增大,於的濃度np減小,遷移率p 。
  6. Abstract : a quantitative analysis for dynamic stability of a set of superconducting partial torus in a fusion reactor under a pulse current over a stationary current is given

    文摘:對于聚變反應堆中超在穩態基礎上受到脈沖影響時的動力穩定性給出了定量分析方法。
  7. High order electromagnetic field of current carrying conductor at rest

    靜止的高階磁場
  8. The field in large - aperture photoconductors is mainly composed of bias field, space - charge field formed by transient distributing of carriers

    內的場是偏置場、光內光生子的空間瞬態分佈所形成的空間場等疊加形成的合場。
  9. In the case of single - channel magnetic guiding, we calculate the relationship between the guiding efficiency and electric current or the transverse temperature of atomic beam. we also propose several atom - optical elements base on the uccc

    本文也計算了單通道磁引情況下,原子引效率和、原子束橫向溫度之間的關系,並採用u -型構建了多種原子光學器件。
  10. This paper makes a further analysis of the traditional opinion about ampere force that is the macroscopic showing of lorentz force, and it demonstrates that microscopic nature of ampere force is composition of electric field forces applied by hall electric field which is caused by lorentz forces for the positive ions at the crystal lattice of the conductor in magnetic field

    摘要對安培力是洛倫茲力的宏觀表現的傳統說法進行了深入剖析,指明了安培力微觀本質是由於洛倫茲力而引起的霍爾場對磁場中的晶格正離子施加的場力的合力。
  11. In addition, the characteristics of critical current of hts tapes in ac applied field and that of voltage - current curve when transport ac currents were studied. the problem on the criterion of ac current carrying capacity of hts tape was discussed, and some suggestion on the criterion of ac current carrying capacity were proposed

    另外,對高溫超帶材在交背景磁場下的直臨界特性,及超傳輸交時的?壓曲線特性進行了實驗研究,並對高溫超帶材的交最大能力的測量判據問題進行了探討,給出最大交測量判據的建議。
  12. The new black dragon 3 powercord provides greater ac current capacitance with the conductor winding twice as large as the silver dragon power cord

    黑龍3纜提供更強大的交能力,因為它的纏繞達到了銀龍的兩倍
  13. After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors

    本文主要研究聚對苯乙炔( ppv )薄膜發光二極發光效率及主要影響因素,簡單地介紹了ppv薄膜發光二極的研究背景及發展趨勢、 ppv器件的結構和性質后,提出了一個計算器件發光效率理論模型,利用這個理論模型得出了發光效率公式的表達式:並對注入、復合效率等進行了數值計算,通過合理地選擇計算參數,發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合,在此基礎上,對發光效率進行了數值計算和理論分析,結果表明:計算結果與理論研究結果相符較好,得出結論如下: ( 1 )本文的理論推正確地反映了器件中子的注入、傳輸和復合等基本機制; ( 2 ) ppv薄膜中的致發光是激子復合的結果,發光效率受多種因素影響。
  14. The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ), which in the semiconductor equipment

    提供一種半裝置,在向負( el像素及信號線)供給的晶管中,可以不受偏差的影響供給正確的
  15. When the triggering light goes, the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers " conductive channel in the body of the devices and control the current of the lock - on switching

    當觸發光脈沖消失后,單極荷疇內雪崩離和輻射復合在開關內形成了子高通道,成為了子倍增的源泉,控制著lock - on
  16. Different distribution of power loss can be worked out by mathcad software based on the formula reasoning. the result of calculation is consistent with that of the experiment, which proves that this method is right. it is pointed out through the analysis of calculating data that the key to improve efficiency at the same output power is to decrease the peak current and rms current of power switches or the on - resistance of mosfet and windings

    由推可得損耗計算公式,利用數學計算軟計算出路輸出從空到410w阻性負時損耗分佈變化,該結果與實驗數據基本相吻合,證實了這種方法的正確性;通過對計算數據的分析,指出了進一步提高效率的關鍵在於輸出相同功率時降低功率管的峰值和有效值,減小繞組和mosfet的阻。
  17. Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area

    多數子-一種子,在半材料中起支配作用的空穴或子,例如在n型中是子。
  18. 3. a good result is gotten under the star - hspice simulation. the dc gain is 90 db, the offset voltage is 40 u v while driving 10k, the unity - gain frequency is 10mhz with phase margin 67, the slew rate is 10w us while driving 10pf

    用star - hspice模擬軟路模擬,在1 . 5v壓、直10k負、交10pf負的情況下,整個共模壓范圍內跨基本保持恆定,只有18的變化,直增益90db ,單位增益帶寬10mhz ,相位裕度80度,壓擺率10v s 。
  19. When the stationary working current is lower than the critical current of the electromagnetic - elastic system, a numerical program is established to simulate the dynamic responses of the deformation of the current - carrying magnet subjected to a pulse current with rectangular shape

    結合其超的實驗結構,給出了超在不同穩態工作(即低於穩態的磁彈性失穩臨界)作用下受到矩形脈沖作用時的磁彈性動力響應的數值模擬結果。
  20. Low - voltage switchgear and controlgear - part 4 - 3 : contactors and motor - starters - a. c. semiconductor controllers and contactors for non - motor loads

    低壓開關設備和控制裝置.第4 - 3部分:接觸器和動啟動器.非動機負用交控制器和接觸器
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