載電流導體 的英文怎麼說
中文拼音 [zǎidiànliúdǎotǐ]
載電流導體
英文
current-carrying conductor- 載 : 載Ⅰ名詞(年) year : 一年半載 six to twelve months; six months to a year; 三年五載 three to five ...
- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 流 : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
- 導 : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
- 體 : 體構詞成分。
- 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
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Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes
肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件,與普通的pn結二極體相比,它具有正向導通電壓低,響應速度快等優良特性。Carries created by ultra - fast laser pulse accelerate in the field of the photoconductor and form a transient photocurrent. the shape of the photocurrent lies on the movement of the carriers, as well as the movement of the carrier ' s lies on the field in the photoconductor
光電導體中的載流子在光電導體內的運動情況決定了所輸出電脈沖的波形,而載流子的運動是在光電導體內部電場的作用下進行的,所以光電導體內的電場對光電導開關的性能有顯著的影響。The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed
與體si器件相比,採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率,更大的跨導,更強的電流驅動能力以及更快的電路速度等等。Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近幾年才出現的新型器件,它將soi材料和sige材料結合在一起,與傳統體硅器件相比,表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢,特別適用於高性能、高速度、低功耗超大規模集成電路。It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能,發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大,載流於的濃度np減小,遷移率p 。Abstract : a quantitative analysis for dynamic stability of a set of superconducting partial torus in a fusion reactor under a pulse current over a stationary current is given
文摘:對于聚變反應堆中超導載流磁體在穩態電流基礎上受到脈沖電流影響時的動力穩定性給出了定量分析方法。High order electromagnetic field of current carrying conductor at rest
靜止載流導體的高階電磁場The field in large - aperture photoconductors is mainly composed of bias field, space - charge field formed by transient distributing of carriers
光電導體內的電場是偏置電場、光電導體內光生載流子的空間瞬態分佈所形成的空間電荷電場等疊加形成的合電場。In the case of single - channel magnetic guiding, we calculate the relationship between the guiding efficiency and electric current or the transverse temperature of atomic beam. we also propose several atom - optical elements base on the uccc
本文也計算了單通道磁導引情況下,原子導引效率和電流、原子束橫向溫度之間的關系,並採用u -型載流導體構建了多種原子光學器件。This paper makes a further analysis of the traditional opinion about ampere force that is the macroscopic showing of lorentz force, and it demonstrates that microscopic nature of ampere force is composition of electric field forces applied by hall electric field which is caused by lorentz forces for the positive ions at the crystal lattice of the conductor in magnetic field
摘要對安培力是洛倫茲力的宏觀表現的傳統說法進行了深入剖析,指明了安培力微觀本質是由於洛倫茲力而引起的霍爾電場對磁場中載流導體的晶格正離子施加的電場力的合力。In addition, the characteristics of critical current of hts tapes in ac applied field and that of voltage - current curve when transport ac currents were studied. the problem on the criterion of ac current carrying capacity of hts tape was discussed, and some suggestion on the criterion of ac current carrying capacity were proposed
另外,對高溫超導帶材在交流背景磁場下的直流臨界電流特性,及超導體傳輸交流時的流?壓曲線特性進行了實驗研究,並對高溫超導帶材的交流最大載流能力的測量判據問題進行了探討,給出最大交流載流電流測量判據的建議。The new black dragon 3 powercord provides greater ac current capacitance with the conductor winding twice as large as the silver dragon power cord
黑龍3電纜提供更強大的交流電負載能力,因為它的導體纏繞達到了銀龍的兩倍After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors
本文主要研究聚對苯乙炔( ppv )薄膜發光二極體發光效率及主要影響因素,簡單地介紹了ppv薄膜發光二極體的研究背景及發展趨勢、 ppv器件的結構和性質后,提出了一個計算器件發光效率理論模型,利用這個理論模型得出了發光效率公式的表達式:並對注入電流、復合效率等進行了數值計算,通過合理地選擇計算參數,發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合,在此基礎上,對發光效率進行了數值計算和理論分析,結果表明:計算結果與理論研究結果相符較好,得出結論如下: ( 1 )本文的理論推導正確地反映了器件中載流子的注入、傳輸和復合等基本機制; ( 2 ) ppv薄膜中的電致發光是激子復合的結果,發光效率受多種因素影響。The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ), which in the semiconductor equipment
提供一種半導體裝置,在向負載( el像素及信號線)供給電流的晶體管中,可以不受偏差的影響供給正確的電流。When the triggering light goes, the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers " conductive channel in the body of the devices and control the current of the lock - on switching
當觸發光脈沖消失后,單極電荷疇內雪崩電離和輻射復合在開關體內形成了載流子高導電通道,成為了載流子倍增的源泉,控制著lock - on電流。Different distribution of power loss can be worked out by mathcad software based on the formula reasoning. the result of calculation is consistent with that of the experiment, which proves that this method is right. it is pointed out through the analysis of calculating data that the key to improve efficiency at the same output power is to decrease the peak current and rms current of power switches or the on - resistance of mosfet and windings
由推導可得損耗計算公式,利用數學計算軟體計算出電路輸出從空載到410w阻性負載時損耗分佈變化,該結果與實驗數據基本相吻合,證實了這種方法的正確性;通過對計算數據的分析,指出了進一步提高效率的關鍵在於輸出相同功率時降低功率管的電流峰值和有效值,減小繞組和mosfet的導通電阻。Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area
多數載流子-一種載流子,在半導體材料中起支配作用的空穴或電子,例如在n型中是電子。3. a good result is gotten under the star - hspice simulation. the dc gain is 90 db, the offset voltage is 40 u v while driving 10k, the unity - gain frequency is 10mhz with phase margin 67, the slew rate is 10w us while driving 10pf
用star - hspice模擬軟體對電路模擬,在1 . 5v電源電壓、直流10k負載、交流10pf負載的情況下,整個共模電壓范圍內跨導基本保持恆定,只有18的變化,直流增益90db ,單位增益帶寬10mhz ,相位裕度80度,壓擺率10v s 。When the stationary working current is lower than the critical current of the electromagnetic - elastic system, a numerical program is established to simulate the dynamic responses of the deformation of the current - carrying magnet subjected to a pulse current with rectangular shape
結合其超導載流磁體的實驗結構,給出了超導磁體在不同穩態工作電流(即低於穩態的磁彈性失穩臨界電流)作用下受到矩形脈沖電流作用時的磁彈性動力響應的數值模擬結果。Low - voltage switchgear and controlgear - part 4 - 3 : contactors and motor - starters - a. c. semiconductor controllers and contactors for non - motor loads
低壓開關設備和控制裝置.第4 - 3部分:接觸器和電動啟動器.非電動機負載用交流電半導體控制器和接觸器分享友人