輻射熱發光度 的英文怎麼說

中文拼音 [shèguāng]
輻射熱發光度 英文
bolometric luminosity
  • : 名詞(車輪中車轂和輪圈的連接物) spoke
  • : Ⅰ動詞1 (用推力或彈力送出) shoot; fire 2 (液體受到壓力迅速擠出) discharge in a jet 3 (放出) ...
  • : 名詞(頭發) hair
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • 輻射 : radiation; exposure; radio; beaming
  1. The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "

    認為cu等離子體羽的機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的;隨激能量的增加, cu等離子體特徵(分立譜) 、連續背景(連續譜) 、電子溫都出現最大值;結合對al的實驗結果說明:激燒蝕金屬產生的等離子體,其特徵、連續、電子溫可能都存在一定的能量閾值;背景氣壓對激燒蝕等離子體譜線的影響,其機理可以認為是「庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。
  2. Emission ( by atoms, molecules or ions in a material ) of optical radiation which, for certain wavelengths or restricted regions of the spectrum, is in excess of the radiation due to thermal emission from the material at the same temperature, as a result of these particles being excited by energy other than thermal agitation

    原子、分子或離子由於受能量的激而產生的某一波長或波長范圍內的,這種的能量超過了在相同溫下該材料產生的的能量。
  3. We give ptr ' s amplitude and phase signal of one dimension based on the theory of ptr, discuss the ptr ' s signal ' s frequency characteristic, and a method for measuring thermal diffusivity of opaque materials is introduced. then, we study on anisotropic materials " thermal conductivity, the temperature field and thermal conductivity tensor of anisotropic materials is theoretically deduced from the theory of ptr, and is proved by the experiment

    理論出,推導出一維情況下ptr信號的振幅和位相表達式,討論了信號的頻率特性,介紹了一種用ptr技術測量不透明材料擴散系數的優化方法;接著研究分析了各向異性介質受調制激照下產生的信號,在理論上推導出各向異性介質的溫場以及導率張量並給予一定的實驗驗證。
  4. Photothermal radiometry ( ptr ) is based on photoacoustic ( pa ) technology. it is a new detection technique with high sensitivity and without damaging effects. it is applied in many fields

    (簡稱ptr )技術是在譜技術(簡稱pa )基礎上展起來的一種新型檢測技術,由於其有高靈敏、無損傷的優點,因此在各方面的應用極為廣泛。
  5. Photothermal radiometry ( ptr ) is based on photoacoustic ( pa ) technology. it is a new detection technique with high sensitivity and non - destructive. this method is applied in many measurement fields

    ( photothermalradiometry )技術(簡稱ptr技術) ,是在譜(簡稱pas )技術基礎上展起來的一種新型的非接觸檢測技術,具有高靈敏、無損傷等優點,所以在測量方面有廣泛的應用。
  6. For investigating thermal character changing of matter with shock compression, we need to measure the time character of radiating spectrum of matter with shock compression and its temperature, that is to measure transient time - resolved spectrum and its temperature

    為了研究沖擊加載下物質特性的變化,需要測量沖擊壓縮態物質所脈沖譜及溫的時間特性,即進行瞬態譜的時間分辨測量及溫解析。
  7. Using field emission cathode, x ray source can be made with several advantages : smaller volume and brighter, high frequency response, in - time turning on, etc. considering of the merits and potential markets, researching and fabricating miniature x - ray source is meaningful

    由於突起數目大且尖端頂端電場強高,因此產生很大的場電流密。採用場陰極的x源具有體積小,高,頻率響應快,可以隨時開啟,無需預的優點。
  8. The effect of electric field in the polarizer in the research of laser induced damage was analyzed, and on the basis of it, low losses laser polarizer was designed. based on the analyses, temperature distribution of optical film layers irradiated by the laser pulse was calculated with the alternating direction - implicit technique. from the results, we adjusted the technique parameters

    分析了薄膜內電場分佈對穩定性的影響,並在此基礎上,設計了低損耗的激偏振膜;從溫場設計的角,利用交替方向隱式原理編制了膜層內溫分佈數值計算程序,通過計算薄膜參數對膜層內溫分佈的影響,對沉積工藝進行了相應的調整。
  9. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料,以其禁帶寬大、電子飽和漂移速大、熔點高、導率高、抗能力強和化學穩定性好等優點成為製造短波長器件及高溫、高頻、大功率電子器件的理想材料。
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