輻照缺陷 的英文怎麼說

中文拼音 [fúzhàoquēxiàn]
輻照缺陷 英文
irradiation defect
  • 輻 : 名詞（車輪中車轂和輪圈的連接物） spoke
  • 照 : Ⅰ動詞1 （照射） illuminate; light up; shine 2 （反映） reflect; mirror 3 （拍攝） take a picture ...
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps

    在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。
  2. Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere

    不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。
  3. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。
  4. In this article, low temperature photoluminescence measurements have been performed on as - irradiated and postannealed n - type 6h - sic, the postannealing temperature is up to 1650 ?. three sharp lines at 478 ^ 483. 3 and 486. 1nm respectively were observed for the first time in the as - irradiated samples and argued to be due to vacancy - like induced by irradiation

    對經輻照后未退火的n型樣品的低溫光致發光實驗中，首次觀察到三條尖銳的譜線，分別位於478 . 6 、 483 . 3和486 . 1nm位置，該系列譜線可能與輻照誘生的點缺陷有關。
  5. The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400. it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h

    同時快中子輻照后硅中產生v - o復合體等缺陷，在低於600 、 1小時的退火也難以消除，表明快中子輻照直拉硅中的氧相關缺陷更加復雜。
  6. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  7. In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant

    本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。
  8. Interact of fast - neutron irradiation defects and oxygen impurity in cz - silicon was investigated in this paper. the result suggested that oxygen precipitation formed at high temperature was promoted by fast - neutron irradiation obviously. compared with ntdczsi, fast neutron irradiation accelerated precipitation in czsi much more

    本文對快中子輻照直拉硅中的缺陷和氧的相互作用進行了研究，快中子輻照促進了直拉硅中的氧沉澱，與以往ntdczsi研究結果相比，其促進作用更加明顯。
  9. The new vibrational infrared absorption band was assigned to local vibrational modes related to the complicated complex of irradiation defects that did not contain oxygen atoms

    該峰只與輻照有關，對應復雜輻照缺陷， 400退火可以基本消除。
  10. Cz si crystal radiated by neutron will produce radiating effect, it will make a certain offset of resistivity compare with the original data, but it can be recovered to the original data by hot treatment in n at 650 ~ 700

    摘要cz矽單晶受中子輻照，產生輻照缺陷，使其電阻率相對于其原始值有一定的偏差，經氮氣氣氛、 650 ~ 700熱處理，其電阻率可以基本恢復原始值。
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