近紫外區 的英文怎麼說
中文拼音 [jìnzǐwàiqū]
近紫外區
英文
near ultraviolet band-
The experiments show that the color of the iceland spar can be changed when heated to a certain temperature, that is, light yellow iceland spars will fade when heated to 360 - 370, while dark yellow iceland spar will fade at 440 - 450, brownish yellow iceland spar at 460 - 470 ; and the color of light purple iceland spar can be removed when heated to 390 - 400, while the color of deep purple iceland spar can be removed at 440 - 450, deep reddish purple iceland spar at 460 - 470. on base of the u - v absorption spectrum, we find that the u - v absorption spectra of the faded iceland spars are paralleled to the x axis, the transmittance of them are also greatly improved
實驗表明，冰洲石在加熱到一定溫度時顏色會發生變化：淺黃色、深黃色和褐黃色冰洲石分別在360 - 370 、 440 - 450和460 - 470完全褪色；淺紫色、深紫色和深紫紅色冰洲石分別在370 - 380 、 440 - 450和460 - 470時完全褪色。通過對褪色后冰洲石進行紫外-可見光吸收光譜測試表明：完全褪色后的冰洲石在紫外-可見光的吸收光譜上表現為一條近平行x軸的直線；紫外、可見光區的紫區的光透過率有了很大了提高。Near ultraviolet band
近紫外區The intercalation of peo leads to the structural rearrangement, resulting in the improvement of the li + ions content in the films. moreover, the intercalation of peo enhances the electrochromic efficiency, resulting in the improvement of electrochromic behavior of the films
同時普遍提高了復合薄膜在近紫外和近紅外區域的吸收率，增強了薄膜在近紫外區的陰極電致色，提高了薄膜的電致變色效率，改善了薄膜的電致變色性能。The stretching vibration of v = o shifts to lower wavenumbers, which is contributed to the oet v : = o bonding interaction. the intercalation of peo effectively shields the electrostatic interaction between li + ions and v2o5 layers, resulting in the improvement of the cycling reversibility and stability of li + ions insertion / extraction in the interlayer of v2o5 xerogel and the improvement of electrochromic behavior of the films
通過電學、電化學和光學性能測試結果表明: peo的嵌入，有效屏蔽了vzos層對li十離子的靜電作用及peo與li十離子之間產生的絡合作用，大大提高了li +離子在氧化物層間的嵌入容量、嵌入/脫出可逆性和穩定性，有效提高了薄膜的電致變色性能尤其是在近紫外區的陰極電致變色性能。Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic
多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。Under uv - irradiation of the xw11 / sio2 ( x = p, si, ge ) composite films, all as - synthesized films exhibited high photocatalytic activity on the degradation of aqueous formic acid ( fa ). it has been shown that aqueous fa can be totally degraded into co2 and h2o. the photocatalytic reactions followed langmuir - hinshelwood first - order kinetics
結果表明，在溫和條件下（常溫、常壓和自然酸度） ，用近紫外區的光能輻射以上體系時，三種多金屬氧酸鹽復合膜材料都具有較高的活性，而且fa可被完全礦化為二氧化碳和水。Faraday rotation spectra was measured on samples with model cgx - 1 fr test apparatus by ourselves using the magneto - optical modulated double - frequency method. the development on magneto - optical material and devices, especially on rare - earth ion garnet, were reviewed. as a solution to the problem for temperature stabilized and wideband magneto - optical materials which could satisfy the development of magneto - optical devices for integration and miniaturization, a modified liquid phase epitaxy ( lpe ) technique was brought forward to grow thin film yb3fe5o12 onto substrate ybilg or thin film ybilg onto sustrate ybig
本論文工作包括對ybiig 、 ybig系列石榴石薄膜制備的實驗構想、相圖分析、制備工藝分析和配方設置，搭建了液相外延設備；比較系統地研究了ybiig 、 ybig系列石榴石薄膜的生長、測試，首次成功制備了ybig ybiig 、 ybiig ybig ggg系列復合膜，並採用xrd 、 sem 、 epma等方法對所得樣品進行了結構、組分和微區形貌分析，用紫外可見光光譜儀測試了其在可見近紅外波段光吸收。Investigation on heat treat process indicated : transparent of agx photochromic glass lower in near ultraviolet area after heat treat process, the light absorbtion is similar with agx crystal
對熱處理過程的研究表明：熱處理后的agx光致變色玻璃在近紫外區域的透光率降低，呈現類似於鹵化銀晶體的光吸收。Porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( oeic ), opening up the bright future for the very large integrated circuit ( vlic )
多孔硅可在近紅外和可見，甚至在近紫外光區輻射強烈的熒光，使得它可用來製造發光器件，並可望能用來解決光電子集成電路的關鍵問題，為製造帶有光源的大規模集成電路?光電集成方面開辟新的途徑。分享友人