退到后層 的英文怎麼說
中文拼音 [tuìdàohòucéng]
退到后層
英文
send backward-
Fungi form mycorrhizae in plant roots and the hyphae take in carbon from plants through their epidermal cells and move mineral nutrients and water from soil to their epidermal cells ; this symbiosis is of high importance in studying biodiversity conservation, the origins and evolution of terrestrial plant, the rehabilitation and reconstruction of degenerated ecosystems, agriculture, horticulture and forestry
真菌在植物根系形成菌根后，菌絲通過根的皮層細胞獲取植物提供的碳源，同時將礦物營養和水從土壤轉運到皮層細胞，這種共生過程的研究在生物多樣性的保護、陸生植物的起源與演化、退化生態系統的修復與重建以及農業、林業和園藝業的應用具有重要的意義。Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sigeThen it introduces the three ways of " the state - run capital withdraws from the state - owned enterprise, while the non - state - owned capital is entered " for state - run small and medium - sized enterprises in china - - the foreign capitals purchasing and combining, purchasing by non - government enterprise and mbo. and finally it introduces the definition of mbo, its significance and general process of development in china, the characteristics of foreign mbo and its enlightenment for mbo in china. part two summarizes firstly the risks met during the process of operating mbo
論文的第二部分，筆者在詳細研究的基礎上，首先總結了我國國有中小企業在具體操作mbo的過程中所遇到的風險，分別闡述了mbo操作前的理論風險、法律風險、中介機構風險、政府風險和市場退出機制風險;操作中的收購主體風險、定價風險、資金來源風險、管理層的道德風險和員工角色轉換風險;操作后的還款風險、提高企業績效風險、管理風險、反收購風險和內部人控制風險。Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope
發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。Based on the further study by the scedng tunneling microscopy ( stm ) investigation, a sthce structural model wth the formation of the pair - like er adatom rows is adopted to replace the previously suggested single er adatom model to explain the ( 4x2 ) reconsmiction
5至1個單層鉺原子的硅（ 001 ）襯底上，經低溫退火后觀察到了（ 4 2 ）再構。通過對該現象的進一步的掃描隧道顯微鏡研究，建立起了基於鉺吸附原子對的模型來解釋該再構。分享友人