退底火 的英文怎麼說

中文拼音 [tuìdehuǒ]
退底火 英文
decap
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 火 : fire
  1. When flux appears liquid and transparent on both tube and valve, start sweeping flame back and forth along axis of joint to maintain heat on parts to be joined, especially toward base of valve socket

    當焊劑變成液態並且在管道和閥門上呈現半透明狀態時，開始將火焰沿著連接部件的軸線進行進退烘烤，以保持連接部件、特別是閥門套筒底座部位的熱度。
  2. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加熱反應，得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米，而且中間包裹氯化鈉（ nacl ）顆粒； xrd等結果顯示，高溫退火併徹底清除nacl后形成的中空碳球已經部分石墨化。
  3. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  4. According to the results of ramman and xrd spectrum, the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied, and the function of the thermal annealing have been discussed

    採用顯微喇曼譜結合xrd ，研究了5 1014cm - 2dy離子注入陶瓷基底上沉積的cdte薄膜的結構和喇曼特性，並討論了離子注入后的退火效應。
  5. With double travelling cranes, advanced 60mm punching machine, 140mm fungus type punching machine ; domestic leading 159mma r tube rolling - mills, 159mm7 rack calibrator ; the national monopoly product micro tension - reducing diameter machinery and the producer gas generator ; 40, 60, 80, 220mm straightening machine ; 5 40 tons motoblocs ; bottom rolling type continual annealing furnace ; 14m pitch type heating furnace as well as qg1118 highly effective pipe cutter and so on as well as correlated necessary facility

    公司據有雙配行車的大型廠房17500平方米，先進的60mm穿孔機， 140mm菌式穿孔機國內領先的159mmar軋管機， 159mm7機架定徑機國家專利產品微張力減徑機和煤氣發生爐40 60 80 220mm矯直機540噸拉拔機滾底式連續退火爐14m斜坡式加熱爐以及qg1118高效切管機等以及相關配套設施。
  6. ( 2 ) uniform cdse nanowire arrays with controllable lengths have been fabricated by dc electrodeposition in the aao templates with ag as their conductive substrates from dmso system under different temperature. the nanowires with the diameters from 10nm to 50nm, and the lengths from 1 ( m to 20 ( m have been obtained

    以銀作為導電基底的多孔陽極氧化鋁為模板，在dmso體系中，用恆流電沉積方法，于不同溫度下分別在直徑為10 ， 20 ， 50nm的aao模板中制備出了cdse納米線，並對它們進行了退火處理。
  7. The results proved that : ( 1 ) because of the material ' s difference of primer - 9 and primer - 5, the maximum stress of primer - 5 is larger than primer - 9 but the maximum displacement is smaller than primer - 9. ( 2 ) because of the unrenewable shape changing of primer - 9 after impacting by the pin, it will cracking under high pressure more easily. so, the paper give the suggestion that the designer should decrease the depth of impacting by pin in the case of the primer be fired successfully

    對底- 9底火、底部被擊針撞擊后的第- 9底火和底- 5底火在膛壓作用下分別進行了有限元數值分析，計算表明： （ 1 ）底- 5底火底部擊針撞擊部位為火帽座，其材料為鋼帶，底- 9底部承受撞擊部位為底火體，其材料為冷拉退火圓鋼，由於材料強度不同，承受壓力能力和變形能力不同：雖然在膛壓作用過程中底- 5底火的最大應力值比底- 9底火的大，但底- 5底火的最大位移量卻比底- 9底火的小得多。
  8. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  9. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  10. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  11. Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities

    通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。
  12. The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491

    通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。
  13. In this dissertation, nanometer zno thin films on si ( 100 ) substrates were prepared by using thermal evaporation technique following by two - step annealing process : high quality zno thin films and mgxzn1 - xo alloy films have been grown on si ( 100 ) substrates with mgo buffer layers by using thermal evaporation technique following by two - step annealing process

    本文介紹了採用電子束蒸發方法在si補底上制備出了高純度的金屬鋅膜，然後通過二次退火得到了具有六角結構的高質量氧化鋅多晶薄膜材料，另外，還採用電子束蒸發mgo薄膜作為緩沖層二次退火金屬鋅膜的方法制備出了高質量氧化鋅多晶薄膜材料和mgzno合金薄膜材料。
  14. Abstract : the quality of hearth roll of continuous annealing furnace is one of major factors that affect work rates and surface quality of products

    摘要：硅鋼連續退火爐的爐底輥質量是影響作業率和產品表面質量的主要因素之一。
  15. As well, the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them

    同時， zno薄膜（ 002 ）方向上存在著內應力，內應力是由膜材料與基底材料之間的晶格失配和不同熱擴散系數造成的，退火可可使內應力的到不同程度的釋放。
  16. Two different growth methods are used to prepare ultra - thin hflayers on si ( 001 ) substrate for the purpose of studying the initial stage of the hafniuin / si ( 001 ) interface formation

    5單層hf原子于a （ 001 ）襯底，並繼之以最高至650的退火。上述測量結果表明hf在ao ）的室溫淀積模式是所謂的層層生長模式。
  17. It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing

    有報道稱採用離子注入的方法將mn ~ +注入到gaas單晶襯底中，經過快速熱退火處理后，發現在晶體中生成了mnas第二相。
  18. Compared with the csa ( classical sa ), fsa ( fast sa ) and lga, the new versions of the algorithms seem to gain better performance. there are several application examples investigated and presented in the dissertation. de - convolution techniques based on mossa is shown in chapter 7, underwater acoustic channel estimation and data recovery in chapter 8, and the inversion problems in underwater sound field in chapter 9. chapter 10 summarizes the investigation and gives the major conclusions

    本研究取得的主要成果有： 1 ）多操作結構模擬退火演算法（ mossa ） ； 2 ）歸一化遺傳演算法（ nga ） ； 3 ）變結構遺傳演算法和混合式優化演算法； 4 ） mossa反卷積處理技術和通道估計方法； 5 ）海底特性參數聲學反演的ga方法等。
  19. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  20. At the break of each day, the arch - mage of menzoberranzan went out to narbondel and infused the pillar with a magical, lingering heat that would work its way up, then back down

    在每一天的開始，魔索布萊城的大法師都會離開他的房間來到納爾邦德，在柱底釋放一個火焰法術，整個白天這魔性火焰沿石柱不斷上升，知道整根柱子變得炙熱，然後熱量逐漸消退，一切又都歸于平靜。
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