退氮處理 的英文怎麼說
中文拼音 [tuìdànchǔlǐ]
退氮處理
英文
denitriding-
Tianjin fengdong heat treatment equipment co., ltd, sino - japanese joint venture, is a specialist firm to produce unicase series multi - purpose complete set, speria series pre - vacuum multi - purpose furnace complete set, uninite gas soft - nitriding furnace complete set, mesh - belt type continuous furnace, pit type bright annealing furnace and pit gas carbonitriding furnace complete set
全套技術，生產滴注式unicase系列密封箱式多用爐成套設備， speria bbh型預抽真空多用爐成套設備，氣體軟氮化爐成套設備，網帶式連續爐，井式光亮退火爐及井式氣體滲碳爐成套設備，並承接各種非標熱處理設備的設計和製造。We found that the cz silicon wafers preannealed by rtp in nitrogen atmosphere are significantly characteristic of ncz silicon wafer, that is, the n - o complexes related stds are also generated in the cz wafer subjected to rtf in na and subsequent proper heat treatments
研究發現，氮氣氛下高溫rtp處理的cz硅樣品在後續熱處理中表現出了摻氮硅的退火特性，進而證明了在氮氣氛下rtp處理中氮發生了內擴散。Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )
在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。The company deals with the heat treatment processing of various specification, type and kind of ferrous nonferrous metal, including anneal, quenching, hardening tempering, carburizing, solid solution, aging, vacuum heat treatment, high frequency treatment, blueing, nitriding and ion nitriding etc, the annual capacity of which is more than 18, 000t
我公司可以承攬各種規格型號品種的黑色金屬有色金屬熱處理加工業務，包括：退火正火回火淬火調質滲碳固溶時效真空熱處理高頻處理發藍氮化離子氮化等。年加工能力22000餘噸，年加工產量出口佔70 % 。High leakage currents and low - frequency dielectric relaxation were found in as - deposited capacitors after they had been post - annealed in nitrogen at 550 and subsequently annealed in oxygen at 350. the mechanism of this phenomenon was discussed
經過高溫550氮氣退火處理后，再放入350的氧氣中退火，發現其介電特性出現了非常明顯的低頻弛豫現象，並且伴隨著漏電特徵的惡化。Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。Effect of the structures of iron - passived porous silicon annealed in pure nitrogen ambients
高純氮氣退火處理對鐵鈍化多孔硅形貌的影響分享友人