退火時間 的英文怎麼說

中文拼音 [tuìhuǒshíjiān]
退火時間 英文
annealing time
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 時 : shí］Ⅰ名1 （比較長的一段時間）time; times; days:當時at that time; in those days; 古時 ancient tim...
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 退火 : [冶金學] anneal; annealing; back-out
  • 時間 : time; hour; 北京時間十九點整19 hours beijing time; 上課時間school hours; 時間與空間 time and spac...
  1. We also find that the pinning phenomenon gradually disappear with thicker single layer of the [ pt / mn ] n films, and firstly prepared permalloy before the deposition of [ pt / mn ] n multiplayer more easily form anti - ferromagnetic structure than another caseo maybe this is a good way to shorten the annealing time

    我們還發現隨著單層厚度的增加釘扎現象逐漸消失，而且先沉積nife層，后沉積pt / mn多層膜的情形更容易獲得反鐵磁結構。這可能是縮短退火時間的一種好方法。
  2. By analyzing the microstructure of as - cast alloys with different surplus of samarium added, the optimum surplus of samarium is decided. by comparing the microstructure of the alloys annealed for different time, the ideal and economical annealing time is confirmed. the microstructure and phase composition of alloys during the whole preparation of sm2fe17nx are analyzed using the scanning electron micrograph with energy - dispersive x - ray analysis and x - ray diffraction patterns

    本論文首先就熔煉工藝參數對鑄態組織微結構的影響進行了探討，並制定出一套較為合適的熔煉工藝；通過對不同釤加入量的鑄態組織微觀結構的觀察分析，確定了原料配置過程中釤的最佳補償量；通過對採用不同退火時間的合金組織進行比較，確定了理想、經濟的退火時間；同時還利用掃描電子顯微圖像和x射線衍射圖譜，比較了整個制備過程中，試樣微結構和相組成的變化情況。
  3. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  4. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  5. The visible optical absorption of the film increases with increasing annealing time, coating - annealing time and concentration of the starting solution

    樣品的可見光區光吸收率隨著初始溶液濃度、退火時間、塗膜厚度的增加而增加。
  6. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  7. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  8. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  9. As annealing temperature is 400, the phase of fexsy is greigite ( fe3s4 ) the fexsy particles cover the porous film of tio2. the average size of fexsy particles range from 5000nm to 20nm as the concentration of the starting solution decreasing. after five times of coating - annealing process, fexsy particles form aggregate in size of 10 m

    鐵硫化合物顆粒覆蓋在多孔tio _ 2基底上，顆粒尺寸隨著初始溶液濃度減小從幾個微米減小到十幾個納米，隨著塗膜厚度、退火時間增加，鐵硫化合物的形貌按顆粒狀島狀層狀變化。
  10. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  11. High anneal temperature and long anneal time do good on increasing the size and density of silicon nano - crystals

    退火后薄膜中的晶粒尺寸和密度都有所提高，退火溫度升高或退火時間延長都有助於結晶狀態的改善。
  12. The photoluminescence of the thin films without post heating is weak. only one luminescence band is found nearby 473nm. two luminescence bands are found after post heating, nearby 493nm and 368nm respectively. the intensity of the luminescence bands increase little by little when the temperature and the time of post heating continues to increase

    而退火處理過后，薄膜出現兩種光致發光現象，即藍色發光和紫外發光，其峰值分別在493nm和368nm附近，而且隨著退火溫度的升高和退火時間的延長，發光譜帶的強度逐漸增大，峰形的位置也有不明顯的藍移。
  13. We have studied the influence of growth parameters of buffer layer under large flux of reactant materials and found that parameters such as v / ratio, growth temperature and ammonia flux during annealing have evident influences on the growth of buffer layer, while other parameters like growth pressure, pressure during annealing and ramping rate show little influence

    在大源流量流下，研究了gan緩沖層各生長參數的影響規律，發現對緩沖層生長影響顯著的條件有生長比、生長溫度、退火時的氨氣流量。而緩沖層生長壓力、退火壓力及退火時間的影響相對較小。
  14. The gradient films and the modification of the microstructure can be realized by the post - heating. then the novel antireflecting energy saving coating glass is achieved. it is also found when the temperature and time of the post - heating increases, the average reflectivity will decrease and the average transmission will increase

    實驗結果表明，隨著退火處理溫度的升高和退火時間的延長，鍍膜玻璃的平均反射比呈線性下降的趨勢，而其平均透射比則呈現增大的趨勢，不過前者的下降趨勢更加劇烈和明顯。
  15. At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively

    結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。
  16. Both the size and density of oxygen precipitation increase with the annealing time, and the size of oxygen precipitation decrease with the increase of the annealing temperature

    隨著退火時間的延長氧沉澱尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉澱尺寸相對減小。
  17. By analyzing the microstructure and phase composition of sm - fe alloy annealed and nitrided for different time using scanning electron microscopy and x - ray diffraction technique, the optimum values for the annealing time and the nitriding time is determined

    通過對不同退火時間和氮化時間下材料的掃描電子顯微分析和x -射線衍射分析，確定了最佳的退火時間和氮化時間。
  18. So to shorten annealing temperature and time is a vital issue

    因此，降低退火溫度，縮短退火時間是一個急待解決的問題。
  19. The latter structure is composed of polycrystalline graphite in fact. a large amount of sic > 2 single crystals with the size of lonm appears in the film when the time of the post - heating is increased to five hours

    當退火時間延長到5個小時，薄膜的結晶度和600退火一個小時的薄膜相類似，不過，薄膜中大量存在的是10nm左右的sio2晶粒。
  20. Anneal treating has different influence on the films " electrical properties. at lower treating temperature, treating time and treating atmosphere ' s influence on electrical properties are not obvious : at higher treating temperature, the sheet resistance increases with the treating temperature and the treating time ' s increasing because of o ion and na ion ' s permeating into the films. based on the above study, semi - industrial experimentation on line has been done in the float glass line

    退火處理對薄膜電性能也有較大影響，在較低退火溫度下，退火時間和退火氣氛對薄膜電性能影響不是很大；在較高退火溫度下，玻璃基板中的na ~ +等堿金屬離子和退火氣氛中的o對薄膜電性能影響很大，退火溫度越高，退火時間越長，薄膜電阻率越大。
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