退火沉積 的英文怎麼說

中文拼音 [tuìhuǒchénjī]
退火沉積 英文
annealing deposit
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 退火 : [冶金學] anneal; annealing; back-out
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. We also find that the pinning phenomenon gradually disappear with thicker single layer of the [ pt / mn ] n films, and firstly prepared permalloy before the deposition of [ pt / mn ] n multiplayer more easily form anti - ferromagnetic structure than another caseo maybe this is a good way to shorten the annealing time

    我們還發現隨著單層厚度的增加釘扎現象逐漸消失，而且先沉積nife層，后沉積pt / mn多層膜的情形更容易獲得反鐵磁結構。這可能是縮短退火時間的一種好方法。
  2. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  3. After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged

    相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。
  4. Then, by annealing, the si / sic / sich nano - composite films are prepared. the influence of the post - heating on the microstructure of the films has systematically been studied by the means of the measurements of hrem. the nano - crystals are found embedded in the amorphous matrix in the unannealed sample and the crystallinity is not high

    以硅烷和乙烯為原料氣採用常壓化學氣相沉積制備得到si / sic復合薄膜，並使用退火處理方法對該薄膜進行后處理，最終得到si / sic / slo ：納米鑲嵌復合薄膜。
  5. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  6. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  7. According to the results of ramman and xrd spectrum, the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied, and the function of the thermal annealing have been discussed

    採用顯微喇曼譜結合xrd ，研究了5 1014cm - 2dy離子注入陶瓷基底上沉積的cdte薄膜的結構和喇曼特性，並討論了離子注入后的退火效應。
  8. ( 2 ) uniform cdse nanowire arrays with controllable lengths have been fabricated by dc electrodeposition in the aao templates with ag as their conductive substrates from dmso system under different temperature. the nanowires with the diameters from 10nm to 50nm, and the lengths from 1 ( m to 20 ( m have been obtained

    以銀作為導電基底的多孔陽極氧化鋁為模板，在dmso體系中，用恆流電沉積方法，于不同溫度下分別在直徑為10 ， 20 ， 50nm的aao模板中制備出了cdse納米線，並對它們進行了退火處理。
  9. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  10. Films prepared by pulsed laser deposition

    脈沖激光沉積法原位後退火生長mgb
  11. Superconducting thin films ; pulsed laser deposition

    超導薄膜脈沖激光沉積原位後退火
  12. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  13. We study the formation mechanism of semiconductor grains from the aspect of the thermodynamics and the dynamics of the grains and the chemistry reaction in the films

    從濺射薄膜沉積時或退火處理時的薄膜中顆粒的熱力學和動力學的角度以及是否存在化學反應對半導體顆粒的形成機理做了進一步的探討。
  14. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  15. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  16. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  17. The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored

    本論文的任務就是利用脈沖激光沉積lacamno _ 3薄膜，並通過退火等一系列工藝處理提高薄膜性質，最終製作測輻射熱儀的敏感元件，同時也對材料的物性展開討論，以探尋更多的應用。
  18. On the surface of annealed 45 steel, as the pearlite in it contains cementite phase and has high crystal boundary density, the nucleation and growth of deposits prefer to occur at the pearlite at the beginning during depositioa the coating exists in form of nano - polycrystal layers composed by gathering of nano - sized crystals

    在退火態45鋼表面，由於珠光體組織中含有滲碳體相且具有比較高的晶界密度，因而在沉積初期鍍層優先在此處形核和生長；鍍層在基體表面是以納米尺度的晶粒聚集在一起形成的聚晶體形式存在的。
  19. With sem, x - ray diffraction analysis, magnetic measurement by magnetic property measurement system, the effects of growth and annealing conditions are analyzed

    超導薄膜，採用磁測量m - t x射線衍射掃描電子顯微鏡技術分析了各種沉積及退火條件對mgb
  20. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。
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