退火溫度 的英文怎麼說
中文拼音 [tuìhuǒwēndù]
退火溫度
英文
annealing temperature-
In our experiment, the specific fragment was amplified from transgenic bobwhite genome dna at annealing temperature 61 by using high - fidelity pfu dna polymerase and cloned into clone vector pgem - 7fz ( + ), then sequenced. the cloned sequence was completely identical to the sequence which was issued in genbank
本實驗採用了高保真pfudna聚合酶，在退火溫度61條件下從轉基因bobwhite品種基因組dna中擴增出特異性片段，將此片段插入克隆載體pgem - 7fz （ + ） ，經測序和序列分析表明，所擴增得到的片段含有bar基因完整的讀碼框，並且序列與genbank中發表的序列完全一致。2. the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured. the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures, whereas for poor - crystallized films with lower annealing temperature, their bandgap energy values are much larger than that of single crystals
發現batio3多晶薄膜的光學帶隙大於文獻報導的單晶薄膜的光學帶隙，對于結晶性好的薄膜，其光學帶隙接近於單晶值，退火溫度越低，結晶性越差，與單晶的光學帶隙相差越大。After dealing with post heating at the same deposit temperature, the average of transmission and reflectance of the films are smaller than unannealed ones but eopt is enlarged
相同沉積溫度下制備的薄膜樣品經過不同退火溫度和退火時間處理后，薄膜的平均透過率和平均反射率都比退火前下降，光學能隙變大。In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time
在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem
論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )
當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process
當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film
退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。While the thin films are annealed at higher temperature, the c axis of the permanent phase tends to lie in the thin films plane, which results in the higher coercivity of the thin films
隨著退火溫度的升高，薄膜永磁相c軸趨向于平行膜面，從而薄膜面內矯頑力較高。The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。The nano - bulk al should be kept more man 30 minutes at temperature no more than 300 to annealed which is much lower than that of ordinary aluminum materials
對納米鋁塊體材料的退火實驗表明，模壓成形的鋁塊體材料的退火溫度（ 300 ）比常規的鋁材（ 400 ）要低，退火保溫時間應在30分鐘以上。The tbzre glass has great forming ability, which can form glassy body under relative slow cooling ratio. moreover, the technique of glass ' s annealing is easy. the npre - 1 glass has strong viscosity
其中亞碲酸鹽玻璃（ tbzre ）成玻能力強，在較慢的冷卻速率下也能得到非晶玻璃；且退火工藝簡單，退火溫度下保持一小時后再冷卻到室溫即可。By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k
利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。The buried layers moves towards sample surface, forming surface layers. the implantation - damaged zone also moves towards the surface and is recovered gradually. the fe - implanted films were implanted, or doped, with small amount of carbon for improving the film quality
另外隨退火溫度變化的還有注入損傷層，隨退火溫度的升高注入損傷逐漸恢復，損傷層厚度逐漸減小，到850的時候硅化物層斷裂，損傷層則上升到樣品表面。We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。The samples that annealed at different temperatures and different cooling ways ( fast or slow ), separately, was compared. the experimental results showed that the temperature and the cooling - way of the gettering process were very important for the gettering efficiency
之後二極體分別進行退火溫度700 6hr 、 800 6hr 、 900 6hr和退火后快、慢降溫方式下j _ r值的比較，結果表明吸除熱處理摘要abstraer溫度對于吸雜效果至關重要。Because the contact resistance between the metal contacts and the superconducting films has large impact on the performance of superconducting filters, we experimental techniques. after annealing the optimum temperature and, we got the minimum contact resisitivity. we also further studied the interaction between ag and ybco films after annealing at a certain temperature and attempted to give an explanation and discussion
金屬接觸電極與超導薄膜之間的接觸電阻對超導濾波器的插入損耗有很大影響，因此，本文通過多種實驗方法，系統的研究了ag與ybco超導薄膜之間的接觸電阻問題，得到了最佳退火溫度，並對退火時ag與ybco超導薄膜之間相互作用的機理進行了研究和探討。Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
（ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。分享友人