退火狀態 的英文怎麼說

中文拼音 [tuìhuǒzhuàngtài]
退火狀態 英文
annealed condtion
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 退火 : [冶金學] anneal; annealing; back-out
  • 狀態 : status; state; condition; state of affairs: （病的）危險狀態 critical condition; 戰爭狀態 state o...
  1. When flux appears liquid and transparent on both tube and valve, start sweeping flame back and forth along axis of joint to maintain heat on parts to be joined, especially toward base of valve socket

    當焊劑變成液態並且在管道和閥門上呈現半透明狀態時，開始將火焰沿著連接部件的軸線進行進退烘烤，以保持連接部件、特別是閥門套筒底座部位的熱度。
  2. The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper

    本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。
  3. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  4. Sims depth profile analysis on the as - implanted wafers showed that there are two hydrogen enrichment peaks around both sides of the projected range ( rp ) of oxygen, which correspond to the two interfaces of the box layer of the annealed samples

    Sims結果表明水離子原注入樣品中的氫分佈出現了明顯的雙峰分佈狀態，這兩個峰的峰位分別位於注入氧分佈濃度峰值rp的兩側，並且與退火樣品的氧矩形分佈的兩邊位置基本重合。
  5. The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi

    在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。
  6. In spite of these advantages, we should concentrate on how to extend the representation of modes, how to apply to unstructured grids, etc. and when combining pod and saa, it is necessary to know how to represent the shape and how to control the range of seeking and iteration number

    但在研究的過程中，我們發現正交分解方法也存在如下問題:如何增強基模態的表達能力，如何將該方法應用於非結構網格的計算等。在利用模擬退火演算法結合解算器進行翼型反設計時，則需要考慮如何表達幾何外形形狀，怎樣控制搜索范圍以及如何減小搜索次數等實際問題。
  7. Now if we suppose that the rated temperature limit of any chip were identical, confining the highest temperature in the rated limit is the most important, for this purpose i apply the principle of annealing algorithm to the optimization of place distribution design. under the unvaried condition of thermal dispersion, we can get the least temperature of the maximum value in some kind of chip array

    為了使得電子元件最大溫度負荷在特定散熱狀態下達到最低（低於額定的最高溫度值） ，我們將模擬退火演算法的優化設計思想應用到電子元件陣列的布局優化中，使得在不改變外部散熱條件的情況下，僅僅通過電子元件位置分佈的改變就取得降低其最高工作溫度的效果。
  8. This paper improved the way of neighborhood search of sa algorithm. the extended pattern search is adopted, in which three ways are chosen, that can change the packing states of objects ( translation, rotation, swap ) and two kinds of pattern search matrices ( translation and rotation pattern search matrices ) are introduced

    文中改進了模擬退火演算法的搜索方法，採用擴展模式搜索：選擇三種改變物體布局狀態的方式（平移、旋轉、交換） ，採取兩種模式搜索矩陣（平移和旋轉模式矩陣） 。
  9. High anneal temperature and long anneal time do good on increasing the size and density of silicon nano - crystals

    退火后薄膜中的晶粒尺寸和密度都有所提高，退火溫度升高或退火時間延長都有助於結晶狀態的改善。
  10. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。
  11. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  12. It can reduce power dissipation dramatically. however, the leakage power severely increases because of the low threshold, so a simulated annealing algorithm is presented to adjust threshold in non - critical paths, while the threshold in critical path is still kept low to increase performance. this method can decrease leakage power by 100 times without speed penalty

    為了降低等待狀態的漏電功耗，本章提出了一種基於模擬退火演算法的雙閾值調節方法，對關鍵路徑上的器件採用較低的閾值以提高速度，而其餘器件仍然保持較高的閾值以避免過大的漏電流，將該方法應用於iscasbenchmark電路中，可以使漏電功耗基本保持不變，而動態功耗則大幅度降低。
  13. At last, several examples of genetic algorithm improved by simulated annealing algorithm, which adopted different functions deciding whether to accept a state and different markov chains, are used to analyze the property of this algorithm

    最後，用計算試驗對比了遺傳演算法和遺傳模擬退火演算法的收斂性能，對比了採用不同狀態函數和不同markov鏈的遺傳模擬退火演算法的收斂性能，並對結果進行了分析。
  14. According to feature that goal function has more than one local extremum in displacement back analysis for underground engineering, a new means of displacement back analysis for underground engineering has been established through adopting fem and self - adaptation idea on the basis of the improvement of the determining method of control parameters, such as initial temperature and number of state choice and annealing strategy, moreover, the relevant analytic software is developed

    摘要本文針對地下工程圍巖位移反分析問題的目標函數存在多個局部極值的特點，在對模擬退火演算法進程中控制參數，即初始溫度、每一溫度下的狀態選取次數和退火策略的確定方法加以改進的基礎上，引進有限元分析手段和自適應的思想，建立了基於改進模擬退火演算法的位移反分析方法，並開發了相應的分析程序。
  15. Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature, and polyhedral oxygen precipitation was generated at high temperature

    對氧沉澱形態及誘生缺陷進行了tem測試分析，結果表明，在中溫退火時出現氧沉澱引起的層錯和位錯環；在高溫退火後生成了多面體形狀的氧沉澱。
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