退火處理 的英文怎麼說

中文拼音 [tuìhuǒchǔlǐ]
退火處理 英文
annealing treatment
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 處 : 處名詞1 （地方） place 2 （方面; 某一點） part; point 3 （機關或機關里一個部門） department; offi...
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The degree of crystallinity can be increased by annealing in an inert atmosphere.

    結晶度可通過在惰性氣體中的退火處理來提高。
  2. The crystallinity of azo thin films became better after annealing treatment

    退火處理能使其結晶度提高。
  3. Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h

    對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。
  4. The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature

    研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。
  5. Then, by annealing, the si / sic / sich nano - composite films are prepared. the influence of the post - heating on the microstructure of the films has systematically been studied by the means of the measurements of hrem. the nano - crystals are found embedded in the amorphous matrix in the unannealed sample and the crystallinity is not high

    以硅烷和乙烯為原料氣採用常壓化學氣相沉積制備得到si / sic復合薄膜，並使用退火處理方法對該薄膜進行后處理，最終得到si / sic / slo ：納米鑲嵌復合薄膜。
  6. Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c

    用高真空鍍膜機制備了fe _ xcu _ （ （ 1 - x ） ）系列顆粒膜，並對部分膜做了加熱退火處理，樣品被加熱到340並且保溫2小時。
  7. ( 2 ) uniform cdse nanowire arrays with controllable lengths have been fabricated by dc electrodeposition in the aao templates with ag as their conductive substrates from dmso system under different temperature. the nanowires with the diameters from 10nm to 50nm, and the lengths from 1 ( m to 20 ( m have been obtained

    以銀作為導電基底的多孔陽極氧化鋁為模板，在dmso體系中，用恆流電沉積方法，于不同溫度下分別在直徑為10 ， 20 ， 50nm的aao模板中制備出了cdse納米線，並對它們進行了退火處理。
  8. By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k

    利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。
  9. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。
  10. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  11. We study the formation mechanism of semiconductor grains from the aspect of the thermodynamics and the dynamics of the grains and the chemistry reaction in the films

    從濺射薄膜沉積時或退火處理時的薄膜中顆粒的熱力學和動力學的角度以及是否存在化學反應對半導體顆粒的形成機理做了進一步的探討。
  12. A large amount of nano - crystals are found in the film when the sample was annealed for one hour at 500 ? with the crystallinity being increased to 50 %

    研究結果發現，未經過退火處理的薄膜是納米晶粒鑲嵌于非晶介質的復合薄膜，薄膜中的結晶程度不是很高。
  13. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  14. In this paper, the effect of heat treatment on the magnetic properties of s s fibers was studied

    對不銹鋼纖維進行退火處理，以探索材料成分、熱處理工藝與相結構和纖維磁性能的關系。
  15. Explanation carries out annealing handling for sample, the coercivity of pellet membrane average, it is little to reduce

    5910e之間。說明對樣品進行退火處理，顆粒膜的矯頑力平均來說減小了。
  16. Bulk crystals of cd1 - xznxte with high quality are very difficult to obtain. commercial cd1 - xznxte crystals usually contain defects such as twins, sub - grain boundaries, dislocations, and te precipitates. these defects will seriously deteriorate the optical and electrical properties of the crystals

    為了提高晶體性能、減少或消除晶體缺陷，尤其是te沉澱和te夾雜，必須將cd _ （ 1 - x ） zn _ xte晶體在一定的溫度和氣氛條件下進行退火處理。
  17. This paper has first summarized the experiment of granular film and theoretical research progress and the present major problem to be solved, has discussed the purpose meaning of this paper on this foundation, has introduced us soon afterwards with magnetic metal - non - magnetic metal material adopt for studying object to co - vapored deposited system such as the fexcu1 - x of different fe content x granular film sample, carrying out annealing handling for some of samples, using x ray diffraction instrument xrd ), scanning electrical microscopic ( sem ), vibrating sample magnetometer ( vsm ) the tiny structure for sample, appearance and the magnetic result that can carry out detection

    本文首先綜述了顆粒膜的實驗和理論研究進展情況和目前待解決的主要問題，在此基礎上論述了本文的目的意義，隨后介紹了我們以磁性金屬?非磁性金屬材料為研究對象，採用共蒸發法制備不同fe含量x的fe _ xcu _ （ 1 - x ） ，顆粒膜樣品，對部分樣品進行退火處理。給出了用x射線衍射儀（ xrd ） 、掃描電鏡（ sem ） 、振動樣品磁強計（ vsm ）對樣品的微結構、形貌及磁性能進行檢測的結果。
  18. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  19. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  20. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
分享友人
分享到 Line

分享到臉書