退火過程 的英文怎麼說

中文拼音 [tuìhuǒguòchéng]
退火過程 英文
annealing process
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 退火 : [冶金學] anneal; annealing; back-out
  • 過程 : process; procedure; transversion; plication; course
  1. Abstract : with pc - controlled liquid drop counter, protective atmospher es of ball annealing of wires is strictly kept. pickling is easily gained in proc ess of ball annealing of wires and quality wires are produced

    文摘:採用電腦液體滴速計數儀，嚴格控制針布齒條用規格鋼絲球化退火的保護氣氛，防止和消滅針布齒條在球化退火過程中出現的表面不易酸洗現象，提高了鋼絲的表面質量。
  2. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  3. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  4. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  5. Computer simulation of grain growth in two dimensions in annealing process

    退火過程中晶粒生長的二維計算機模擬
  6. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  7. The paper investigats modeling and optimizing problems of parallel machine scheduling with resource - constrained and multi - step working procedure, acting bell - type annealing of shanghai baosteel yichang sheet lt. co. as practical background, designs and develops scheduling production system which is optimized according to practical demand of annealing workshop

    本文以上海寶鋼益昌薄板有限公司罩式爐退火過程為背景，研究了資源受限多步工序并行機器調度問題的建模和優化問題，結合退火爐車間生產調度的實際需要，進行了退火爐優化排產系統的設計和開發。
  8. In order to eliminate the defects, especially te precipitates, cd1 - xznxte slices were annealed in cdzn vapor in the present researches. the variation of te - rich phases in morphology and sizes during the annealing and its effects on the optical and electrical properties of the crystals were examined in detail. the defect chemistry calculations were made

    本文的主要內容就是研究退火過程中cd _ （ 1 - x ） zn _ xte晶體內富te相的形態、大小的變化及其對晶體光、電性能的影響，並通過缺陷化學計算，結合實際的退火實驗，制定相應的退火工藝，改善晶體性能。
  9. The phase composition and microstructure of sm - fe - zr alloy with different amount of zr are analyzed and the effect of zr content on the microstructure of as - cast sm - fe - zr alloy is studied. the results indicate that microstructure of as - cast sm - fe - zr alloy is improved obviously with 1. 0at % zr added, and that the long - time high temperature homogenization is unnecessary for the alloys with this microstructure. by this way, the purpose of the research to decrease the cost of preparation and optimize process is achieved

    分析了不同zr含量的sm - fe - zr合金的相組成和微結構，研究了zr含量對鑄態組織的影響，結果表明，添加1 . 0at的zr可以明顯改善合金的鑄態組織，從而可以避免昂長的高溫均勻化退火過程，取得了降低製造成本和優化工藝的效果。
  10. Based on the comparing analysis and character of clustering algorithm the simulated annealing （ sa ） algorithms was applied to the data clustering. simulated annealing （ sa ） algorithms are random search techniques based on physical annealing process, which can prevent the optimizing process into local optimization and get the global optimization

    演算法以優化過程的求解與物理退火過程的相似性為基礎，通過接受準則和對下降溫度的控制，能夠有效的克服優化過程陷入局部極小從而獲得全局最優解。
  11. Thirdly, integrating bell - type scheduling investigation of domestic and overseas documents, the paper defines optimized scheduling production of bell - type annealing process as the problem of parallel machine scheduling with resource - constrained and multi - step working procedure, whose optimized function of objective function is given also. furthermore, the author constructs bell - type optimized scheduling model by means of the way combing discrete event simulation with algorithm of intelligent optimization

    本文在綜合國內外對于罩式爐調度研究的基礎上，將罩式爐退火過程優化排產定義為資源受限多步工序并行機器調度問題，並定義了優化目標評價函數；將面向對象的離散事件建模模擬方法和智能優化方法相結合建立了退火爐優化排產模型。
  12. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  13. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  14. Simulation of the textures evolution in if steels during annealing

    鋼退火過程中織構變化的模擬研究
  15. Infrared reflectance was used in measuring the characteristics of the sio2 layer on sic. a peak appeared at about 1100cm - 1can be used to monitor the density of the sio2 layer. after annealing in n2, the peak shifted towards high frequency

    運用紅外反射光譜研究sic表面生長的氧化層在退火過程中特徵反射峰的四川大學碩士學位論文漂移情況，實驗發現經過nz退火后，表面5102的1100cm - ，附近的特徵反射峰位向高頻方向移動，並且在1100左右退火時，這種漂移最明顯。
  16. 2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted

    2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。
  17. The difficulty can be overcomed that the n atom is not easy to be doped into zno. if we control the annealing condition, the residual nitrogen atoms will become acceptors in zno : n films

    通過這種方法可以克服n原子不容易慘雜進氧化鋅的困難，並且可以通過控制退火過程來控制n原子< wp = 5 >的摻雜濃度。
  18. The icm method is the fastest one, which is equivalent to the zero temperature annealing procedure, but it will drop into the local minima inevitably in the segmentation task

    Icm方法是最為快速的退火方法，它相當于把溫度固定在0度時的退火過程，但不可避免地會收斂於一個局部極小點。
  19. Mathematical model for the annealing of fused cast al2o3 refractory

    3系耐火材料退火過程數學模型
  20. In view of the higher hardness of high cr - w white cast iron, a lot of experiments were carried out in relation to softening annealing process, and the microstructure transformation during annealing process was analysed

    摘要針對高鉻鎢鑄鐵硬度高這一問題，對其軟化退化工藝進行試驗，並對高鉻鎢鑄鐵退火過程中組織轉變進行分析。
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