逆向磁化 的英文怎麼說
中文拼音 [nìxiàngcíhuà]
逆向磁化
英文
reversed magnetization-
Specific issues examined are : compensation for the variation of the stator resistance, the offset error of the dc bus voltage, the voltage error generated by the forward voltage drop the dead time of the switches, improvement of the steady state performance, and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis
定子電阻變化，直流母線電壓漂移，開關器件反向相電壓降、逆變器死區時間引起的電壓誤差的補償，提高系統穩態運行性能以及永磁同步電機直接轉矩控制的無速度傳感器運行方案等問題都是本文研究的重點。轉矩的快速響應是直接轉矩控制演算法的一個卓越的性能。And it requires few power and can continually change its state which is reversible. it is a kind of ideal control device to implement semi - active control. the technology correlated to mr is gradually set store by people, and it is gradually applied to practical project from theoretical research in lab
用磁流變液製作的阻尼器裝置簡單、體積小、能耗小、可連續可逆變化，是實現半主動控制的理想控制元件，其相關技術越來越受到人們的重視，並且由實驗室研究階段逐步走向應用研究階段。In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
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