通導晶體管 的英文怎麼說

中文拼音 [tōngdǎojīngtǐguǎn]
通導晶體管 英文
on transistor
  • 通 : 通量詞（用於動作）
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  3. Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals

    它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。
  4. With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction

    就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。
  5. General seminconductor, inc. is a market leader in the discrete segment of the semiconductor industry with manufacturing facilities in china, france, germany, united states, etc. the company provides customers with a broad array of power rectifiers, transient voltage suppressors and small signal transistors and diodes

    通用半導體有限公司是世界上半導體切片工業的領導者，它的製造廠遍及中國、法國、德國、美國等國家。公司提供多種多樣的整流器、瞬態電壓消除器、小信號晶體管以及二極體。
  6. Mingxin has set up 15 automatic production lines with stable and reliable assembly processes such as to - 251 ipak, to - 251 - 5l, to - 252 dpak, to - 252 - 5l, to - 220, to - 262, to - 263 d2pak, to - 126, sot - 82, to - 92, to - 92sp, sot - 54, sot - 23, sot - 223 to - 247, etc. our major products are all kinds of power, medium and small signal semiconductors including bipolar transistors, mosfet, jfet, thyristor, bsit and power ic, etc. our products are widely applied for computer, telecommunication equipment, home application, motor driver, energy saving light, instruments and meters, controller, dc motor driver, microphone, sound system, electrical control toy and other consumer appliances, etc

    Pak to - 126 sot - 82 to - 92 to - 92sp sot - 54 sot - 23 sot - 223 to - 247等15條單機自動化生產線，專業生產各類雙極型晶體管可控硅場效應管mosfet以及bsit功率ic等各類大中小功率半導體器件。產品廣泛地應用於計算機及外圍設備通訊設備家用電器汽車電子綠色照明儀器儀表各類控制器馬達驅動器傳聲器音響系統電控玩具及其它消費電子電器等領域。
  7. A switch ic for analog signal processing is designed and implemented, which can fulfill the functions of sampling, weighting, controlling and summing of high frequency analog signals. the circuit consists of three parts : four channel analog switches, a voltage reference and the control circuitry. each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio, which realize the fine tuning and coarse tuning of the input signal respectively

    本文研究並設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。
  8. A new type high efficiency synchronous step - up dc / dc converter for hand - held device is designed in this thesis. it works in the pfm ( pulse frequency modulating ) mode, and its switching frequency can up to 500 khz. it offers a built - in synchronous rectifier that reduces size and cost by eliminating the need for an external schottky diode and improves overall efficiency by minimizing losses

    本文設計了一種用於移動電子設備的高效同步整流的dc / dc升壓晶元，該晶元採用pfm （脈沖周期調制）調制方式，工作頻率最高可達500khz ，內部集成功率管作為同步整流管，代替傳統的肖特基二極體，導通電阻僅有0 . 4
  9. Based on the simulation research of the typical radar analog circuit, it is shown that the main reason of the emerging surge signal is the high transient current conducted in the transistor

    對雷達產生浪涌信號的一個典型電路進行模擬，得出模擬電路產生浪涌的一個重要原因是晶體管的瞬間導通電流過大。
  10. The thyristor cannot be turned off by the gate, and the thyristor conducts as a diode

    此時晶閘管就象二極體一樣導通，不能通過門極關斷。
  11. That is, through analysis of the principle on flow control and " hydraulic transistor ", design and calculation of flow control characteristic as well as main parts in valve inner chamber, a piloted reducing valve will be installed between main valve and pilot valve. after a pressure - difference compensating reducing valve was added in the non - pressure compensating piloted reducing valve of the flow control valve in vlalvistor valve, the calculation on control characteristic emulation and load characteristic emulation has been carried out. the result of the calculation shows that after pressure compensating reducing valve was added, the linearity of the control characteristics has been greatly improved thus eliminating influence upon outlet flow by load pressure - change of the hydraulic system and improving performance characteristics of the hydraulic component

    文章還在對瑞典valvistor閥的插裝比例閥研究的基礎上，提出了一種新的流量控制原理，即：通過對流量控制和「液壓晶體管」原理的分析、流量控制特性及閥內腔主要結構件的設計計算，在主閥和導閥之間增設先導減壓閥，並進一步對valvistor閥的流量控制閥之無壓力補償先導減壓閥、加入壓差補償減壓閥后的控制特性進行了模擬計算和負載特性模擬計算，結果表明：增設壓力補償先導增壓閥后，其控制特性曲線變得非常線性，從而消除了液壓系統負載壓力變化對主閥輸出流量的影響。
  12. With the development of electric and communication technology, portable power is increasingly becoming the most important application area for power semiconductor integrated circuits

    隨著電子和通訊技術的不斷發展，便攜式電子設備電源管理晶元逐漸成為功率半導體集成電路最重要的應用領域之一。
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