通量阱 的英文怎麼說

中文拼音 [tōngliángjǐng]
通量阱 英文
flux trapping
  • 通 : 通量詞（用於動作）
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 通量 : [物理學] flux; shower
  1. If the velocity of atoms is near to zero, the light for ces will tend to confine the atoms near to nodes and antinodes. the stability depends on the magnitude of the negative slope of the light force, the depth of the potential well and the momentum diffusion coefficient. it is important to select the parameters, e. g

    如果通過激光冷卻能使原子速度降至很小甚至為零，光壓力的作用將使原子被較穩定地囚禁于激光駐波場的節點和反節點處，其穩定程度取決于該處光壓力曲線負斜率的大小、對應勢能的勢阱深度以及動量擴散系數的大小，因此，如何在實驗中合理選擇激光強度、失諧量等顯得尤為關鍵。
  2. Through the input parameters modification, we got the micro process image of latent image formation, which indicate the variation of the number of different particles with time and the transformation relationships between them ; also, we got the dependence of photosensitive process on these parameters. on this condition, all kinds of reactions occurred during the process of a certain carrier are very clear from the analysis of the results

    通過對模擬程序中輸入參數的調整，我們得到了不同勢阱密度下潛影形成過程的微觀圖像，揭示了各種粒子數量隨時間的變化關系以及它們之間的相互轉化關系，同時還得到了每一種粒子在感光過程中的反應過程以及它們對整個感光過程的影響。
  3. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  4. In this thesis we discuss these three aspects in detail and our main research work is outlined as follows : in section 2 we first give a definition of entanglement and illustrate some distinctive qualities of entangled states, then explain how to describe entanglement of multi - particle quantum state. in section 3 we show many existing different schemes for preparation of entangled states by spontaneous parametric down conversation, cavity quantum electrodynamics and iron traps, moreover we present new schemes to prepare multi - atom entangled states as well as multi - cavity entangled states

    在第二章中我們將給出糾纏態的定義和度量，研究糾纏態的一些特性，第三章中我們將系統介紹目前理論上利用自發參量下轉換，通過腔量子電動力學和離子阱制備糾纏態的各種方案，以及在實驗上的進展，並在論文中重點提出了利用原子和腔場相互作用來制備多原子糾纏態和多腔場糾纏態的方案。
  5. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  6. According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination

    通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果； （ 3 ）首次用喇曼（ raman ）散射方法研究了常溫下的gainp algainp多量子阱結構，除了指認出喇曼光譜中各光學聲子模外，還結合樣品光致發光譜的測量結果，分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶體gainp algainpmqw的生長質量； （ 4 ）在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型，計算了ab _ （ 1 - x ） c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。
  7. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  8. Ingaasp long - wavelength quantum well laser is at present appied most extensively in optical fiber communication. structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high - qualitied optical communication system

    Ingaasp四元系長波長量子阱激光器是目前在高速光纖通信中應用最為廣泛的一類激光源，構建其電路模型有助於完成光發射機的優化設計，這對于高質量的光通信傳輸系統有非常重要的意義。
  9. The paper can provide a practical means for firms to escape from the trap of price war, that is, to increase brand credit degree through brand construction by changing the place of the demand curve

    我們的分析也為企業擺脫「價格戰」陷阱提供一個可行的思路，即通過品牌建設提高品牌信用度，使得在價格提高的條件下，需求數量增加，而只有使需求曲線改變位置方能達到最佳點。
  10. From discussing and analyzing the calculated outcome we obtain the conclusions as follows : 1. for the energies of the single electron in a square quantum wire with finite barriers, the former wavefunctions [ 12 - 14 ] are only available to the wide wires. for the oscillator strength of the single electron in a square quantum wire with finite barriers, the former wavefunctions are not appropriate

    通過對計算結果的討論和分析，得到以下結論: 1 .對有限深方形量子線中單電子的基態能和第一激發態能，前人』 2一』 『 』所取波函數只適合計算寬阱時的情況，對有限深方形量子線中單
  11. It reframes the traceback problem as a polynomial reconstruction problem, and uses techniques from algebraic coding theory to provide robust methods of transmission and restriction. the scheme is a new solution to the traceback problem during a dos attack ; the honeypot for ddos, which is a tool of traceback, lures the attacker to believe that he successfully compromised a slave for his needs, convincingly simulating the architecture of a potential ddos attack ; the source - based approach to ddos defense, which is a useful adjunt to traceback systems, deploys a ddos defense system at source - end networks. attacks are detected by monitoring two - way traffic flows, and the attacks originating from source networks are stopped by rate - limiting ; the routing mechanism based on pushback treats ddos attacks as a congestion - control problem

    最後，就有關ddos攻擊反向追蹤問題，從四個方面對其解決方案進行了研究：在分析比較幾種反向追蹤演算法的基礎上，著重研究了代數方法編碼反向追蹤信息的方案，該方案把追蹤重構問題當作多項式重構問題，使用代數編碼理論技術提供魯棒的傳送和重構方法，是dos攻擊過程中的反向追蹤問題的一種新的解決方法； ddos陷阱作為反向追蹤的工具，引誘攻擊者相信自己成功與所需的傀儡主機通話，令人信服地模擬出潛在ddos攻擊體系結構；基於源的ddos防禦方法作為反向追蹤有用的補充，將防禦系統部署在源網路，通過監控雙向流量檢測攻擊和限制速率終止來自源的攻擊；基於向後倒推的防禦ddos的路由機制把ddos攻擊看作擁塞控制問題，添加功能到每個路由器來檢測並優先丟棄可能屬于攻擊的包，通過向後倒推上級路由器也得到通知而把這樣的包丟棄。
  12. The corba - > snmp gateway is the core of the model, the main functions implemented are : 1 ) mapping variables based snmp mib specifications to corba idl interfaces and dynamically creating object references for these idl interfaces. 2 ) converting the operation to properties of the idl interfaces to snmp request messages and the snmp result messages to return values of the operation. 3 ) listening on the specified port for snmp traps / notifications, and converting the snmp notification messages to omg notification service based events, the corba - based managers subscribe with the event channels for omg notification service based events interested in

    Corba - > snmp網關是該模型的核心，主要實現以下功能：完成以變量為核心的snmpmib到以對象為核心的corbaidl介面之間的轉換，並動態為idl介面生成對象引用；將對介面中屬性的操作轉換為snmp請求消息並把snmp代理方返回的消息轉換成操作的返回值；監聽snmp陷阱和通知埠，並將snmp通知消息轉換為omg事件， corba管理方通過事件通道注冊所感興趣的omg事件。
  13. Secondly, by combining with the whole process of m & a analysis the thesis comprehensively introduces the main contents and methods of business m & a " s value appraisal and detailedly introduces principles of discounted cash flow method, comparable company analysis method, comparable transaction analysis method, as well as the way how to determine the main parameters of them by giving corresponding examples. after that, it analyses the suitable range for use of different appraisal methods and the present situation of our country ' s business value appraisal, point out the problems and puts forward the solutions of them. thirdly, the thesis separately expounds how to choose financing policies and financing channels, how to analyse financing costs, how to determine the unit of financing ways

    本文通過融會國內外企業並購相關理論，辨析了企業並購的概念和動機，介紹了企業並購的一般模式及並購方式的選擇；其次結合併購分析的大致過程全面介紹了企業並購的價值評估的主要內容及方法，對其中的現金流量折現法、可比公司分析法、可比交易分析法的原理及主要參數的確定予以了詳細的介紹，並分別附以相應的實例分析，同時還分析了不同評估方法的適用范圍和我國的企業並購價值評估現狀，指出了其中存在的問題，並提出了解決建議；此外，對企業並購的融資政策、融資渠道的選擇、融資成本分析和融資方式的確定單位? ?予以論述；最後，本文分析了企業並購的財務陷阱的成因及其可能造成的損失，並結合實際提出了避免財務陷阱的措施。
  14. 4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination

    通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。
  15. In addition, this paper has analyzed and calculated the wave - guide mode theory, got the quantum well laser photic - field distribution ' s fluctuation equation, deduced the far - field distribution ' s mathematics model by the method of stepwise approached, and simulated the near - field and far - field about the laser with computer software. we utilized a pair of mode expand layers which can restricted in photic - field to narrowed the far - field comer about quantum well laser material structure ( the corner was about 21 ?

    另外本文還對光波導模式理論進行了理論分析和計算，得到了量子阱激光器光場分佈的波動方程，利用逐步逼近的方法推導出了遠場分佈的數值模型，通過計算機軟體模擬出了激光器遠近場分布圖，並利用模式擴展層對光場的限製作用得到了窄遠場發散角（約為21 ）的量子阱激光器材料結構。
  16. Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps

    通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。
  17. The results of numerical calculation show that the ground - state energy changes with the coulomb bound potential, magnetic field and the well - width, which will increase with increasing magnetic field and decrease with increasing the coulomb bound potential and the well - width

    通過數值計算結果表明：量子阱中束縛極化子的基態能量因振動頻率、庫侖束縛勢、磁場和阱寬的不同而不同，它隨振動頻率和磁場的增加而增大，隨庫侖束縛勢和阱寬的增大而減小。
  18. By the complicated mathematical calculating, we obtain the energy equation of charged excitons, from which we can determine the variational parameters a and, thus the complex energy of charged excitons can be calculated, and the binding energy and correlation energy of charged excitons can be obtained versus the quantum well width

    通過復雜的數學推導得到帶電激子體系能量的數學表達式，對變分參數和變分可確定出變分參數和，從而得到體系能，進而計算出體系的束縛能和相關能隨阱寬的變化。
  19. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
  20. For being with many advantages, it has been an active subject in recent years and much progress has been made. on the basic of analysis of many kinds of led structures, a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission. through calculation of led external quantum efficiency, a method for design hb - led top layer was evaluated

    本論文分析了當前國內外各種led的結構及其製作工藝，在技術上較為成熟的雙異質結構基礎上，我們在器件的有源區引入應變多量子阱結構，並根據實際需求增加補償應變技術以保證發光層結構的穩定性；通過對器件外量子效率的計算，使得在器件設計有了定量的理論分析依據；並採用先進的渦輪lp - mocvd成功制備出galnp gaalinp應變多量子阱高亮度發光二極體器件。
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