運輸斜槽 的英文怎麼說

中文拼音 [yùnshūxiécáo]
運輸斜槽 英文
conveying chute
  • : Ⅰ動詞1 (物體位置不斷變化) move; revolve 2 (搬運; 運輸) carry; transport 3 (運用) use; wield...
  • : Ⅰ動詞1 (運輸; 運送) transport; convey 2 [書面語] (捐獻) contribute money; donate 3 (失敗) l...
  • : 形容詞(跟平面或直線既不平行也不垂直的) oblique; slanting; skew; bevel; diagonal; askew; inclined; tilted
  • : 名詞1 (盛牲口飼料或飲料等液體的器具) trough; manger (for water animal feed wine vat) 2 (兩邊...
  • 運輸 : transport; carriage; conveyance; traffic; transportation
  1. Measures have been taken to save energy and reduce consumption. using chain - board elevator and air slides, reliability of the system is enhanced and conveying energy consumption is decreased

    4充分考慮節能、降耗,生料入窯使用節能型的板鏈式提升機和空氣,提高了系統的行可靠性,降低了送能耗。
  2. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量模型對由凹深度改變引起的負結深的變化對深亞微米柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹深度)的增大,柵器件的閾值電壓升高,亞閾率退化,漏極驅動能力減弱,器件短溝道效應的抑制更為有效,抗熱載流子性能的提高較大,且器件的漏極驅動能力的退化要比改變結深小.因此,改變深加大負結深更有利於器件性能的提高
分享友人