過偏壓 的英文怎麼說

中文拼音 [guòpiānyā]
過偏壓 英文
overbias
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 偏 : Ⅰ形容詞1 （不正; 歪斜） inclined to one side; slanting; leaning 2 （只側重一面） partial; prejudi...
  • 壓 : 壓構詞成分。
  1. With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance.

    當正向偏壓足夠高時，擴散電容很容易超過空間電荷壓電容。
  2. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  3. So, the bond stress and slip of src eccentric loading columns must be accurately measured and studied further

    因此有必要通過準確量測構件內部的粘結應力和滑移，進一步對偏壓柱的粘結滑移性能進行研究。
  4. According to the force balance equations, the values and distributions of bond stress between steel shape flange and concrete in eccentric loading columns were established by statistically regression with experiment data. and the influence of the factors such as relative eccentricity e0 / h, the slenderness ratio l0 / h on the bond - slip properties was analyzed

    利用力的平衡方程，通過對試驗數據統計回歸，得到了偏壓柱型鋼兩側翼緣與混凝土的粘結應力的大小及分佈規律，並分析了偏壓柱長細比、偏心距對其的影響。
  5. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  6. The bearing capacity and ductility of eccentrically loaded columns strengthened with cfrp have been researched, based on the test of 9 rc columns

    本文通過9根鋼筋混凝土柱的試驗研究，研究了cfrp加固偏壓柱后對其承載力和延性的影響。
  7. A load - displacement full - process analyzing program of cfrp - confined rc eccentrically loaded columns is given. the computed results of load - displacement coincide with test results

    編制荷載-撓度全過程計算程序對碳纖維布約束偏壓柱進行數值分析，程序計算曲線與試驗曲線吻合良好。
  8. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  9. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  10. The enhancement of water wettability, better optical transparency, and higher wear resistance have been found after the samples were treated under high rf power, bias voltage and gas pressure conditions

    在較高射頻功率、基板負偏壓、反應氣體壓強狀態下制備膜層的潤濕性、耐磨損性較好，而光學透過率較低。
  11. By pushing the weight to the perimeter of the club head, better accuracy with off - centre contact could be achieved

    通過推壓重量到桿頭的周長，這種桿頭的球桿在打球時，比偏離中心接觸桿頭球桿更準確。
  12. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  13. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  14. It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature

    （ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。
  15. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  16. 20 src eccentric loading specimens were designed taking the relative eccentricity e0 / h the slendemess ratio 10 / h as the factors. according to the mechanical behavior of eccentric loading columns, unidirectional embedded electronic steel - concrete slip transfers and double - directional embedded electronic steel - concrete slip transfers were respectively placed inside these 20 specimens and electronic strain gauges were also installed on the steel shape flanges webs and concrete. the change of the mechanical behavior and interior slip of the 20 specimens in the whole process of loading was fully observed

    設計了以長細比、偏心距為主要參數的20個偏壓柱試件，根據偏壓柱的受力特性，在試件中分別放置了單向內置式鋼?混凝土電子滑移傳感器和雙向內置式鋼?混凝土電子滑移傳感器，並分別在型鋼翼緣、腹板和混凝土上布置了電子應變片，對試驗柱在受荷全過程的受力性能、和內部滑移的變化進行了細致的觀察。
  17. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  18. By conducting the degree of influence of slip strain on average strain of a member section, some parameters of corrected even section were accurately calculated, which made the corrected even section more reasonable. and then a calculating model of bearing capacity for eccentric loading columns was proposed by using limit balance equations

    通過推導滑移應變對構件截面平均應變的影響，準確確定出修正平截面中的一些參數，使修正平截面更趨合理性，再利用極限平衡方程，建立了src偏壓柱受壓承載力計算模型。
  19. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  20. In charter iii, the author designed a set of direct current bias and a schematics for measuring signal, by which the character of conduction of the laser plasma in electrical field caused by bias was studied

    第三章中本文作者自己設計了一套直流偏壓裝置及信號測量裝置及方案，從激光等離子體在偏壓電場作用下的導通特性測量，研究了偏壓對激光等離子體空間膨脹過程的影響機理。
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