過退火的 的英文怎麼說

中文拼音 [guòtuìhuǒde]
過退火的 英文
overannealed
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 的 : 4次方是 The fourth power of 2 is direction
  • 退火 : [冶金學] anneal; annealing; back-out
  1. Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex. furthermore, the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc, l ; lines related to dj - center were not observed with sample after postannealing at 1500 ?, the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs

    本文還對經幅照的p -型6h - sic的幅照退火特性進行了研究，在經過1500後退火的樣品中沒有觀察到d _ i - center ，這可能是由於d _ i - center被實驗中觀察到的源於d - a對輻射復合的高強度的譜峰所掩蓋。
  2. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  3. Abstract : with pc - controlled liquid drop counter, protective atmospher es of ball annealing of wires is strictly kept. pickling is easily gained in proc ess of ball annealing of wires and quality wires are produced

    文摘:採用電腦液體滴速計數儀，嚴格控制針布齒條用規格鋼絲球化退火的保護氣氛，防止和消滅針布齒條在球化退火過程中出現的表面不易酸洗現象，提高了鋼絲的表面質量。
  4. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  5. According to the relevancy between web pages and topic, this algorithm first divides the web pages into two types : topic - relevant web page cluster and transitional web page cluster, which determined by simulated annealing algorithm

    演算法根據網頁與主題的相關程度將網頁分為與主題相關的網頁集群與過渡型的網頁集群，利用模擬退火的演算法進行評估。
  6. A well-annealed material may require many days of contact with water.

    一個經過很好退火的材料需要與水接觸許多天。
  7. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  8. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  9. A large amount of nano - crystals are found in the film when the sample was annealed for one hour at 500 ? with the crystallinity being increased to 50 %

    研究結果發現，未經過退火處理的薄膜是納米晶粒鑲嵌于非晶介質的復合薄膜，薄膜中的結晶程度不是很高。
  10. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  11. The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored

    本論文的任務就是利用脈沖激光沉積lacamno _ 3薄膜，並通過退火等一系列工藝處理提高薄膜性質，最終製作測輻射熱儀的敏感元件，同時也對材料的物性展開討論，以探尋更多的應用。
  12. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。
  13. In igaa a simulated annealing algorithm is used to alleviate the selection pressure of the genetic algorithm, and enhance the global convergence of igaa

    在改進的遺傳演算法中利用模擬退火的方法可以緩解遺傳演算法的選擇壓力，增強了遺傳演算法的全局收斂性，避免了在搜索過程中陷入局部最優。
  14. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  15. The size variation of annealed nanoparticles was studied with the treatment temperature. the result shows that, for the size of 11nm zns nanoparticles, they grow up dramatically when the treatment temperature exceeding 600, and have been 3 - 5 um when the treatment temperature increasing to 900

    藉助x射線衍射技術和掃描隧道電鏡等實驗手段，系統研究了zns納米晶經過退火處理后尺寸隨溫度的變化關系，給出了顆粒尺寸隨處理溫度急劇增大的溫度范圍，從能量的角度解釋了退火處理中顆粒長大的原因。
  16. By comparable investigation, two luminescence mechanisms can explain the different variety of pl intensity of origin and annealed samples and are dominant mechanisms separately in unanneal and anneal course

    經過退火處理后，在相同波長的光激發下發光強度逐漸增強，峰型逐漸變好，發光譜帶的半峰寬也變窄。
  17. The best annealing condition of the zno films grown by electron beam evaporation technique was achieved

    採用電子束蒸發的方法在si襯底上生長zno薄膜，通過退火實驗，得到了最佳的退火條件。
  18. The result shows that the emission of the former is far weaker than that of the latter. in addition, a emission band centered at 520nm was observed in all the annealed nanoparticles while it did not appear all the time in the commercial bulk powders

    經過退火處理后，納米晶樣品發射光譜中出現了中心位於520nm的發射帶，而這一發射帶在經過相同退火處理得到的商用熒光粉樣品中始終沒有出現，我們探討了其起源。
  19. That is a hydrolysis procedure of inorganic salts followed by high - temperature annealing process

    這是一個無機鹽水解和高溫退火的過程。
  20. To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process

    作為該項研究的先期工作，首先以p型（ 100 ）太陽電池用直拉矽片為實驗樣品，摸索出熱退火的最佳處理溫度；然後用常規工藝制備了單晶硅太陽電池，測試效率；結果發現用經過熱處理的矽片襯底制備的太陽電池比用沒有經過熱處理的矽片襯底制備的太陽電池其效率有明顯改善。
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