遷移電位 的英文怎麼說

中文拼音 [qiānyídiànwèi]
遷移電位 英文
migration potential
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  2. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  3. This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters

    本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數（電阻率、遷移率、載流子濃度）的影響。
  4. ( 2 ) the kinetics of mesostructure formation is studied. the induction time formation of a white precipitation decrease with the concentration of [ oh " ]. the effect of salts is presented because of adding the re3 + ions into neutral solution containing surfactant. the mechanism of mesostructure formation through " hydrogen - bonding interaction, complex - bonding interaction and a local reconstruction process of the frameworks "

    （ 6 ）當稀土離子進入hms樣品骨架，靠近外來原子的對稱a o st會產生小的變形。 st o st振動帶由於配位金屬電荷遷移躍遷而變成拉曼活性模。 （ ）用ftth光譜研究了a oh凝聚反應動力學，建立了a oh凝聚反應動力學方程，求得其凝聚反應活化能為28士7kj in 。
  5. But the comprehensive properties were improved remarkably. with the addition of carbon nanotubes, the polarization of charging process decreased, the plateau of discharge became flatter and the migration of potential of peaks value of cyclic voltemmograms reduced. for the other hand, the exchange current increased, ohm resistance and electrochemical reaction resistance of the electrodes decreased, the diffusion resistance of hydrogen and the resistance of adsorption decreased, too

    摻入碳納米管對儲氫合金電極的容量影響較小，但其電化學性能卻有較大的改善，主要體現在：充電的極化減小，放電平臺更加平穩、循環伏安曲線的峰值電位隨掃描速度增大的遷移量減小，交換電流密度增大，電極的歐姆電阻、電化學反應、擴散電阻和吸附電阻均減小。
  6. The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray

    對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。
  7. Detailed emission and excitation spectral characteristics have been analyzed and discussed. in addition, spectral red - shift has been found in both charge transfer bands in nanocrystalline y2o3 : eu 3 + compared to the bulk material. the number ratio of s6 sites to c2 sites is also smaller in nanocrystalline y2o3 : eu3 + than that in the bulk one

    與體材料相比，兩種格位的電荷遷移帶在納米材料中都發生紅移；相對于c _ 2格位的電荷遷移帶， s _ 6格位的電荷遷移帶強度在納米材料中比在體材料中明顯降低。
  8. The results indicated that the co - dopants of li +, na + and k + could promote the crystallinity of samples. however, the co - doping of mg2 + and al3 + drastically causes the structure disorder. ( 4 ) the fluorescence decay curves of 5do of samples were measured under the excitation of 266 nm laser

    比較發現，摻雜不僅可以調節納米材料的尺寸，還可以影響材料的結晶性，尤其是後者對發光性質和熒光動力學過程，如熒光強度、電荷遷移帶的位置、 ~ 5d _ 0的壽命等，產生強烈的影響。
  9. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
  10. Decomposition of excitation spectra shows that the charge transfer band of eu3 + at the s6 site lies in the high - energy side of that at the c2 site, resulting in that the energy transfer from the host prefers to the s6 site

    光譜分解得出s _ 6格位的電荷遷移帶位於c _ 2格位電荷遷移帶的高能側， y _ 2o _ 3基質傾向于向s _ 6格位進行能量傳遞。
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