重摻雜區 的英文怎麼說

中文拼音 [zhòngchānzáqū]
重摻雜區 英文
heavily doped region
  • 重 : 重Ⅰ名詞（重量; 分量） weight Ⅱ動詞（重視） lay [place put] stress on; place value upon; attach im...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 區 : 區名詞（姓氏） a surname
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  2. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  3. The result is showed that the value of square resistence is 30. 2 o in heavily doping area and 100. 2o in lightly doping area

    實驗結果顯示，重摻雜區和輕摻雜區的平均方塊電阻分別為30 . 2和100 . 2 ，相差70 。
  4. In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this

    在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。
  5. As far as the new technology of selective diffusion, the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon. afterwards, a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon

    在選擇性擴散新工藝中，我們採用絲網印刷電極的方法在矽片的電極位置印刷濃度較高的磷漿（摻磷sio _ 2乳膠） ，在非電極區噴塗一層濃度較低的磷源，擴散后形成重摻雜和輕摻雜。
  6. In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin

    新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。
  7. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  8. With computations and analysis, the comprehension on the mixing and combustion process is increased, and some significative results are listed below : a ) there are three recirculation regions and one vortex region in the combustor, and these recirculation regions affect the combustion process deeply, b ) increasing side - arm angle and moving side - air inlet position toward the fuel inlet can improve mixing and combustion characteristics, and increase the combustion efficiency, c ) when the angle between two air - inlets equals to 180

    通過計算與分析，增進了對補燃室內摻混燃燒過程的理解，為固體火箭沖壓發動機補燃室設計提供了一些有意義的結果： 1補燃室內的流動十分復雜，存在三個迴流區和一個旋渦區，迴流區對摻混燃燒過程有重要影響； 2增大空氣入射角度、向前移動進氣道出口位置有利於增強頭部迴流區強度，增強摻混效果，燃燒效率上升； 3
  9. First, as using difference between " local government fiscal capacity " and " standard expenditure " as foundation to distribute the transfer payment fund, the degree of standardization is quite limited ; second, regression analysis mixes some unreasonable factors of old system, which makes this calculate way have serious shortcomings in technique ; third, this issue itself is also lack of objective and justice ; and fourth, because of the limited fund, the finance transfer payment system ca n ' t balance the fiscal capacity among regions

    但這種方法也存在明顯的不足，用「地方財力」與「標準支出」的差額作為分配轉移支付資金的依據，規范化的程度十分有限；採用回歸法摻雜了一些老體制中的不合理因素，使技術方法有嚴重的缺陷；同時，財政轉移支付的資金十分有限，起不到地區間財力均衡化的作用。
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