重摻雜 的英文怎麼說

中文拼音 [zhòngchānzá]
重摻雜 英文
heavily dope
  • 重 : 重Ⅰ名詞（重量; 分量） weight Ⅱ動詞（重視） lay [place put] stress on; place value upon; attach im...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. In this paper a lot of experimental data about a - al2o3 crystal with adulterant and zno crystal were acquired by studying the effects of the hydrothermal condition on the synthesized crystal. this paper also will provide guidance for hydrothermal industrialization and researching hydrothermal kinetic process

    本文通過研究合成條件對合成晶體的影響，獲得了大量的有關合成摻雜- al _ 2o _ 3和zno晶體的實驗數據。論文的完成將對進一步完成生產性工藝和探索水熱合成反應動力學過程有重要的指導意義。
  2. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  3. The main work of this thesis is to study of electronic structure of cathode material. some structure paramters, such as total energy, atomic net charge, atomic overlap population, of the model li5mn4o83 +, li5mn12o24 -, li7co6o2015 -, li7ni6o2015 -, li5mn2co2o83 +, li5mn2ni2o8 are calculated

    論文重點研究了正極材料電子結構，通過對尖晶石型錳系材料模型li5mn4o83 +和li5mn12o24 -和層狀結構的li7co6o2015 - 、 li7ni6o2015 -模型以及摻雜模型li5mn2co2o83 + 、 li5mn2ni2o8的計算，得到了各個原子簇體系的總能量、凈電荷分佈、原子重疊布居值。
  4. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  5. The main intention of this study is to investigate 95 alumina substrates by tape casting process, which will be used as ceramic packages in kinds of integrate circuit ( ic ). high bending strength and fine surface were required as the basic properties of ceramic substrates. in this thesis, based on the research of the tape casting used in ceramic substrates at home and abroad

    本文綜述了國內外研究現狀，著重研究細晶氧化鋁的制備和流延工藝參數的控制，以及細晶95al2o3瓷的制備，研究al2o3原料（包括種類和粒度） 、摻雜改性劑、流延漿料、有機配方等對95al2o3瓷基片性能的影響，獲得最佳流延配方，流延基片綜合性能良好，成功制備了細晶氧化鋁瓷基板。
  6. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  7. Moreover, we give a further discussion on the numerical value calculation of temperature distribution. the main problem when we design the high duty - cycle high power laser diode array we face is the large amount of heat during its operation. so we change the proportion of some ingredients and the concentration of the dopage to gain high quality iii - v material

    在激光器陣列的設計過程中，針對大功率激光器嚴重的產熱問題，尤其是高占空比工作時，會有更多的功率轉化為熱的現象，我們改進晶元材料的配比、摻雜，提出適應高占空比工作的器件版圖結構。
  8. According to this law fiftieth : " impure in the product, adulterate, with pretend to be true, shoddy, or with rejected product early those who pretend to be eligible product, instruct halt production, sale, confiscate the product of illegal production, sale, be in goods of product of illegal production, sale to be worth amount 50 % above 3 times the following amerce ; have illegal income, be in confiscate illegal earning ; the clue is serious, revoke business charter ; those who make crime, investigate criminal duty lawfully " will undertake handling

    依據該法第五十條： 「在產品中摻雜、摻假，以假充真，以次充好，或者以不合格產品早冒充合格產品的，責令停止生產、銷售，沒收違法生產、銷售的產品，並處違法生產、銷售產品貨值金額百分之五十以上三倍以下的罰款；有違法所得的，並處沒收違法所得；情節嚴重的，吊銷營業執照；構成犯罪的，依法追究刑事責任」來進行處理。
  9. As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc

    由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。
  10. According to china consumer association work of accept the consumer suit and product examination for many years, food security problem is continuously puzzling our country consumer since long ago. for example, the microbial contamination causes food poisoning, put other things in food, the management of bulk food condition still in chaotic, the quality problem is also serious, the weight of food is not enough, content indicated by food label is different with the symbol, the dining industry work condition is not actually good, food sanitation condition is also bad and so on

    根據中國消費者協會多年接受消費者投訴和開展產品檢測工作發現，微生物污染導致食物中毒、食品中摻雜使假、散裝食品經營狀況混亂、質量問題嚴重、食品缺斤少兩、食品標簽標示內容與實際不符、餐飲業作業條件差，食品衛生狀況令人擔憂等食品安全問題長期以來一直困擾著我國消費者，這給政府管理提出了新的課題。
  11. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  12. In this thesis, we study the thz pulse generation efficiency of the < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and doping levels, using thz time - domain spectroscopy. it is found that both absorption and phase matching condition play important role. it is the first time to systematically study < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels using thz time - domain spectroscopy

    本論文中，我們利用thz時域光譜系統對不同組分、不同摻雜的zn _ （ 1 - x ） cd _ xte < 110 >單晶（ x = 0 0 . 25 ）作為thz輻射材料的性能和光譜響應進行了研究，發現晶體對thz輻射的吸收和晶體的相位匹配是影響晶體產生thz輻射效率的重要因素。
  13. It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated. the particle distributions of s, s + and ar + are gotten. the result has important reference to the investigation of n - type diamond film doping at low temperature

    （ 3 ）對不同氣壓、偏壓和不同的配比情況下n型硫摻雜的金剛石薄膜的動力學過程進行了模擬，得出了摻雜元素s和s ~ +以及惰性氣體ar ~ +的粒子數分佈，計算結果對摻雜過程的研究有重要的參考價值。
  14. The result is showed that the value of square resistence is 30. 2 o in heavily doping area and 100. 2o in lightly doping area

    實驗結果顯示，重摻雜區和輕摻雜區的平均方塊電阻分別為30 . 2和100 . 2 ，相差70 。
  15. The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios

    在這個異質結中， n型重摻雜3c - sic層的厚度為1 m ， p型輕摻雜sicge層厚度為0 . 4 m ，二者之間形成突變異質結。
  16. In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this

    在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。
  17. The n / n + and p / p + epitaxial structures, which become popular with the development of coms technology, because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique

    Coms工藝中普遍採用n / n ~ + 、 p / p ~ +的外延結構，這種以重摻雜矽片為襯底的外延結構與內吸雜工藝相結合，是解決集成電路中的閂鎖效應和粒子引起的軟失效的有效途徑。
  18. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  19. As far as the new technology of selective diffusion, the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon. afterwards, a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon

    在選擇性擴散新工藝中，我們採用絲網印刷電極的方法在矽片的電極位置印刷濃度較高的磷漿（摻磷sio _ 2乳膠） ，在非電極區噴塗一層濃度較低的磷源，擴散后形成重摻雜和輕摻雜。
  20. According to our theoretic analysis and the realistic fabricating condition, the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2. 5 ghz, half - wave voltage about 5v, extinction - ration less than - 40db, transmission loss of tm mode greater than 45db and transmission of te mode less than 0. 15db. to obtain higher switching speed, we proposed that traveling - wave electrode is applied to boa device

    我們選擇在sigaas襯底上生長重摻雜層，通過控制其厚度來設計速度匹配的boa光開關行波電極，實現boa光開關的高速和高帶寬，本文結合boa型光開關的特點提出一種行波電極型boa光開關結構，其理論3db調制帶寬大於20ghz 。
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