金剛石含量 的英文怎麼說

中文拼音 [jīngāngdànhánliáng]
金剛石含量 英文
diamond content
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 石 : 石量詞（容量單位, 十斗為一石） dan, a unit of dry measure for grain （= l00 sheng）
  • 含 : 動詞1 （東西放在嘴裏 不咽下也不吐出） keep in the mouth 2 （藏在裏面; 包含） contain 3 （帶有某種...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 金剛石 : diamond; adamas; carbite; adamant; spark金剛石材料 diamond; 金剛石產地 diamond field; 金剛石結構 ...
  • 金剛 : （佛的侍從力士） buddha's warrior attendant
  1. Secondly, based on the microbeam analytical technique, on the one hand, through investigating the characteristic of major elements in the mantle minerals the author acquired the static information from mantle ; on the other hand, through multi - point analysis of a part of the minerals from mantle, the auther got dynamic information from mantle. finally, generalizating the fruits of this study and predecessors, the autor holds that the constituents of lithospheric mantle possibly includes spinel lherzolites, clinopyroxenites, websterite, dunite, harzburgites, garnet lherzite, phlogopite lherzite, eclogites, clinopyroxene megacrysts ; compared with east china and north china platform, the research field mantle shows the characteristics of higher degree of partial melting processes and more depleted mantle ; the. upper mantle beneath north hetian area is heterogeneous, with a tendency of deficit in a12o3 and lree from kaliyang in west hetian to the river basin of kalakshi river and yulongkashi river ; the subduction of the crust beneath north hetian has ever occurred in geological history and caused the mixing of mantle - crust ; the depth of the origination of basaltic magmas beneath north hetian exceeds 73km ; the thickness of the lithosphere beneath the research area amounts to 204. 9km ; the mantle beneath north hetian has geological condtions for forming diamond deposits

    最後，綜合本區幔源礦物和地幔巖石的特徵以及地球物理資料，得出如下結論：本區上地幔的物質組成有尖晶石二輝橄欖巖、二輝巖、單斜輝石巖、純橄欖巖、方輝橄欖巖、石榴石二輝橄欖巖、金雲母二輝橄欖巖、榴輝巖；與中國東部以及華北地臺上地幔相比，研究區上地幔具有富集主元素中相容元素和虧損其中的不相容元素的特徵，局部熔融程度較高；上地幔存在橫向和縱向的不均一性，從西部的克里陽到喀拉喀什河和玉龍喀什河流域， al和lree富集程度呈下降趨勢，不同來源的相同礦物中主元素的含量差異較大；地質歷史時期這里可能發生過地殼俯沖並產生殼幔混合作用；玄武巖漿的起源深度73km ；從幔源重砂礦物的溫壓估算結果，可以推斷出巖石圈厚度可達204 . 9km ；綜合巖石圈物質組成特徵、巖石圈熱狀態、地幔溫壓狀態、氧逸度以及幔源巖石和幔源礦物的化學成分，認為研究區具備了金剛石成礦地幔地質條件。
  2. 3 brass powder : three kinds of powder, type10, type20 and type30, can been offered. rare earth element and other trace amount of alloy element can been added

    黃銅粉：分10 、 20 、 30黃銅粉，可添加稀土等微量合金元素，分為用於含油軸承及金剛石製品兩類。
  3. The factory which opened on november 17 has a daily production capacity of 12 700 tons

    月17日開設的新工廠日產量為12700噸金伯利巖含金剛石。
  4. Ii. the direct diamond - diamond bonding between granules in domestic pdcs are poor. accordingly more catalyst metal are left over, this weaken the strength of the whole pdc

    國內聚晶金剛石層中晶粒之間直接連接的共價健（ c - c健）比例少，催化劑金屬含量過高，導致宏觀強度低，應採取如下措施： 1
  5. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  6. Morphology of b - doped diamond had been observed by sem. boron contents and impurity situation of b - doped diamond had been analyzed by ftir / raman and xrf

    對含硼金剛石在sem下進行形貌觀察，通過紅外拉曼光譜、 x射線熒光（ xrf ）分析硼摻雜的存在狀態和含量。
  7. Domestic pdcs contain more impurities such as mo, fe and cr. they should be controlled by : 1. improve the purification of diamond powder

    國內聚晶金剛石-硬質合金復合片雜質含量偏高，含有mo 、 fe 、 cr等雜質，需要採取綜合措施降低雜質含量，包括1
  8. Anti - oxidation temperature of diamond with 500 ppm boron reached 1070 specific resistance of diamond with 2158 ppm boron was 1. 93 cm

    含硼500ppm的金剛石抗氧化溫度提高到1070 。當含硼量為2158ppm時金剛石的電阻率為1 . 93 ? cm 。
  9. The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage, frequency, gas flux influenced sp3 bond ratio of dlcs, the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage, reducing frequency, appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic, the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs, but it caused the surface morphology to become asperity

    研究結果表明： （ 1 ）用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能（例如硬度）影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。
  10. The important application of diamond film is using the windows materials coat. because the glass is easy to be stain, it is very disadvantage to grow high quality diamond film. influence the diamond film application, and like commonly, rubbing the quartz glass can not improve the nucleus density, so it is very hard to grow high quality diamond film, and the quartz glass contain too much oxygen, it is very disadvantage to diamond growth

    金剛石薄膜的一個重要的應用就是作為窗口材料塗層，但是由於玻璃易於被污染，對于生長高質量的金剛石薄膜是不利的，影響了其應用，而且由於一般的研磨襯底方法對于石英玻璃的成核方法影響不大，更難以生長出高質量的金剛石薄膜，而且由於玻璃中含有較多量的氧元素，對于金剛石薄膜的生長是不利的，因此對于金剛石薄膜在一些領域中限制了其應用潛力。
  11. In the present research, scanning electron microscope ( sem ), laser raman spectroscopy ( lrs ), x - ray photoelectron spectroscopy ( xrs ), x - ray diffraction ( xrd ) and electron probe micro analysis ( epma ) were utilized to investigate the difference in micro - structure and elements distribution between domestic and foreign pdcs. combined with analysis on current manufacturing process, the mechanism for the difference was discussed. scanning electron microscope ( sem ), laser granularity analysis, atom emission spectroscopy ( aes ) and plasma emission spectroscopy ( icpaes ) are also utilized to investigate the grain shape and impurities of key material - diamond power

    本課題採用掃描電鏡、拉曼光譜、光電子能譜、 x -射線衍射分析、電子探針等方法分析了國內外聚晶金剛石-硬質合金復合片在微觀組織結構、元素成分分佈方面的差異，結合對現有燒結工藝的分析，研討了造成這些差異的機理；採用掃描電子顯微鏡、激光粒度分析、原子發射光譜、等離子發射光譜等方法對關鍵原材料-金剛石微粉的晶形、雜質含量進行了比較分析測試。
  12. It was found by ftir that boron existed as substitute atom or interstitial atom. boron contents of diamond changed from 5 ppm to 2158 ppm

    通過紅外吸收光譜分析，發現硼以取代原子或間隙硼的形式存在於金剛石中，並通過對紅外光譜吸收率計算和xrf分析檢測到硼含量在5ppm到2158ppm之間。
  13. Dta curves of b - doped diamond had been studied, and the resistances had been measured

    分析了含硼金剛石的差熱曲線，並測量了其電阻值。
  14. Conductivity and thermo - stability of b - doped diamond increased with boron contents increasing

    含硼金剛石熱穩定性和導電性隨著硼含量增加而提高。
  15. B - doped diamonds were obtained under the condition of 1250 ~ 1350 and 5gpa ~ 6gpa. color of diamond became deep with boron contents increasing, till becoming black. b - doped diamond was polycrystalline, and crystal surface was developed incompletely

    利用這些gics ，在1250 1350 、 5 6gpa下合成了含硼金剛石，金剛石顏色隨著硼含量增加而加深直至黑色，含硼金剛石生長成多晶顆粒，晶面發育不完整。
  16. The effects of the types and amount of rare earth elements as well as hot - pressing sintering temperature on the mechanical properties of fe - based metal bond and diamond composites either containing or not containing tih2 were studied by means of orthogonal test and variance analysis

    採用正交試驗和方差分析系統地研究稀土種類、添加量和燒結溫度對含tih _ 2和不含tih _ 2條件下鐵基胎體和金剛石復合材料力學性能的影響。
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