金屬半導體的 的英文怎麼說

中文拼音 [jīnzhǔbàndǎotǐde]
金屬半導體的 英文
metal-semiconductor
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 屬 : 屬名詞1 （類別） category 2 [生物學] （生物分類系統上所用的等級之一） genus 3 （家屬; 親屬） fami...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 的 : 4次方是 The fourth power of 2 is direction
  • 金屬 : metal
  1. High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc

    高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。
  2. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  3. The progress in sensitizer of photosensitized photoisomerization of norbornadiene, including triplet energy transfer photosensitizer, transition metal compounds photosensitizer, electron transfer photosensitizer and semiconductor photosensitizer, is reviewed

    論述了光敏化降冰片二烯異構化反應敏化劑的研究進展，包括三重態能量傳遞光敏劑，過渡金屬化合物光敏劑，電子轉移光敏劑，半導體光敏劑等幾種類型。
  4. Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.

    金屬中的電子必須克服這個勢壘層才能進入半導體。
  5. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  6. The light guiding unit on the surface is composed of sub - micron gratings whose transmission wavelengths are red, green and blue in order. the light source are red 、 green 、 blue led or semiconductor laser array. to enhance the light utilization, the surfaces of light guide plate except the incident and transmitted surfaces are coated with metallic film

    本文設計的亞微米光柵型導光板為矩形狀的，導光板上表面的導光單元是由三套出射光主波長分別是紅光632 . 8nm ，綠光521nm ，藍光441 . 6nm的亞微米光柵組成，光源採用的是紅、綠、藍三色發光二級管或者半導體激光器陣列，為了提高光能利用率，除入光面和出光面外，導光板其餘面都鍍上金屬膜。
  7. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  8. Such delocalization is similar to what happens in metals and semiconductors

    這種不受局限的行為和金屬以及半導體里所發生的類似。
  9. In the paper, we introduced how to draw layout based on the standard of 0. 6 m, 5v cmos given by csc semiconductor ltd and finish the work in candence

    晶元版圖的設計中採用了綠華半導體公司的0 . 6 m ， 5vcmos工藝庫，工藝基本特徵為多晶硅柵，單層金屬布線。
  10. Therefore it is urgent to research and develop a rapid, easy and non - destructive way to detect fish freshness by using gas sensor

    半導體金屬氧化物wo3用作電導型氣敏材料已經為人們所熟悉，但用它來檢測三甲胺（ tma ）氣體製作魚鮮度傳感器的研究還處于起步階段。
  11. The end result is that the semiconductor and metal form two strips side by side, with all the electrical contacts ? two for sensing a voltage, two for passing a current in and out ? along the free edge of the semiconductor

    結果半導體與金屬變成相鄰的長條狀，所有電性接點都接到半導體的露出端：包括兩個用來測量電壓的接點，以及兩個分別讓電流流進與流出的接點。
  12. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管
  13. The current behaves exactly as if the metal disk was replaced by a big cavity in the semiconductor that had to be circumnavigated

    電流表現的行為，就好像半導體中的金屬圓盤被一個大洞所取代，因而必須繞路而行。
  14. Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors

    鐵磁半導體的電子能態密度和半金屬性質研究
  15. 1 ' he lneta1 - - semi conductor - - metal ( msm ) structure is an at tract i ve carld idate f ( ) r ; i uv photodetector because of its p1ane structure, fabri cat ion simp1 i ci ty, the easifless of integrat ion

    紫外光電探測器可用於科研、軍事、太空、環保利其它許多工業領域中。而金屬-半導體-金屬（ msm ）結構的器件因其平面型，工藝簡單，便於集成等優點倍受人們的青睞。
  16. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  17. Numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet

    高功率電磁脈沖對砷化鎵金屬半導體場效應管的影響
  18. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  19. At present, the studies on this are mainly focus on the surface geometry structure. little is payed for the electronic structure. in this dissertation, the surface properties of high miller index surface of metals and semiconductors were studies by using the molecular dynamics method, the scattering theoretical method and the ab initio quantum mechanical molecular dynamics simulations

    金屬和半導體材料的高密勒指數表面是目前表面科學研究的一個熱點問題，也是值得更進一步研究的問題，目前的研究主要集中在對表面幾何結構的確定，而對表面電子特性的認識幾乎很少涉及，本文根據目前實驗上對一些表面已有的研究結果，在理論上對一些金屬、半導體的高密勒指數表面的表面能和表面電子結構進行了研究。
  20. The agreement includes complementary metal oxide semiconductor ( cmos ) and silicon - on - insulator ( soi ) technologies as well as advanced semiconductor research and design enablement transitioning at the 45 - nanometer generation

    該協議包括互補金屬氧化物半導體（ cmos ）以及絕緣矽片（ soi ）技術以及轉向45納米級別高端半導體的研究和設計。
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