金屬性導體 的英文怎麼說

中文拼音 [jīnzhǔxìngdǎotǐ]
金屬性導體 英文
electronic conductor
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 屬 : 屬名詞1 （類別） category 2 [生物學] （生物分類系統上所用的等級之一） genus 3 （家屬; 親屬） fami...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. Subsequently. it has been found in all normal cells examined so far except the kidney cells. tctp homologues among the species are highly conserved, which suggest that the protein might have an essential function in cell. lt was reported that tctp caused the release of histamine from ige + basophils and was capable of various functions including calcium binding. metal homeostasis, intracellular signaling and reacting with antimalarial drugs

    從植物到動物的各類細胞中， tctp都有廣泛的高度同源性和高度保守性，提示tctp在細胞中有重要的生物學功能。雖然報道認為tctp具有鈣結合、金屬內環境穩定、細胞內信號傳導、作為ige依賴性組胺釋放因子等功能，但其具體生物學功能尚待進一步研究闡明。
  2. At the room temperature, fluorescence intensities of these chemosensors in acetonitrile without transition metal ions were found to be very weak, due to the process of the efficient intramolecular photoinduced electron transfer ( pet )

    在室溫下對其光物理性質的研究中發現，在沒有加入過渡金屬離子時，由於體系內存在有效的光誘導電子轉移過程使得熒光團的熒光被淬滅。
  3. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  4. The negative photoconductivity effect was found in the dimixing phthalocyanine composites. the experiment results indicated that the negative photoconductivity effects were closely related with the partial charge transfer from the center metals to phthalocyanine rings, and the separation efficiency of photocarriers was a key factor to the photoconductivity

    結果表明，共混復合后，其光電導性能表現出負效應，並發現酞菁中心金屬與其相連的氮原子之間的部分電荷轉移是引起復合體系光電導性能變化的根本原因，同時復合體系中的電子空穴對的分離效率是影響光電性能的一個重要因素。
  5. This paper gives a brief review of four stabilization mechanisms of soc : ( 1 ) recalcitrance of organic carbon compounds, ( 2 ) interactions with metal oxides and soil mineral surfaces, ( 3 ) spatial inaccessibility against decomposers because of micro - aggregate ' s physical protection, and ( 4 ) biological mechanisms, mainly the direct contributions of soil organisms themselves

    土壤有機碳的穩定機制主要包括： （ 1 ）有機碳的難降解性； （ 2 ）金屬氧化物和粘土礦物與有機碳的相互作用； （ 3 ）土壤團聚體的物理保護導致的生物與有機碳空間隔離； （ 4 ）土壤生物學機制，主要指土壤生物自身對有機碳穩定性的直接貢獻。
  6. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  7. Supraconductivity - part 12 : matrix to superconductor volume ratio measurement - copper to non - copper volume ratio of nb3sn composite superconducting wires

    超導性.第12部分:基體與超導體體積比的測量.鈮錫復合超導金屬線的銅對非銅體積之比
  8. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  9. Thirty - one crystals of polyoxometalates ( 1d, 2d, 3d ) were prepared by means of middle hydrothermal technique, molecular design and self - assembly, and characterized structurally by single crystal x - ray diffraction. the thermal stability, activity of catalysis and magnetism of some compounds were systematically studied. the continuous appearance of p - v - o, p - mo - o, v - mo - o, v - o system with novel structure enrich polyoxometalate chemistry, the reaction characterization and the synthesis law of molybdates, tungstates and vanadates under hydrothermal conditions were explored

    由於p - v - o 、 p - mo - o 、 v - mo - o 、 v - o體系新結構不斷出現，豐富了多金屬氧酸鹽化學，探討水熱條件下釩、鉬、鎢物種的反應特性和生成規律，研究原料的選擇、配比、加料順序、濃度、酸度、反應溫度、反應時間等因素對產物的生成及結構的影響，為新的催化劑、導電材料、磁性材料的研製與開發積累經驗。
  10. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  11. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  12. All results indicated that cd2 + had obvious harm to the enzymes. the endogenous protective system could be induced in refained degree under the press, however, which came to weakening along with the aggravation of cadmium, adding to extrinsic calcium could enhance the activities of sod and atpase properly, so protecting the damage of cadmium to the fish

    鎘對草魚酶系統有明顯的毒害作用，內源性保護系統的保護作用在受到脅迫后能夠在一定限度內被誘導加強，但防禦反應隨著重金屬離子毒害的加重而減弱，提高水中ca ~ （ 2 + ）濃度能夠適當增強體內酶的活性，對草魚的鎘毒性危害起保護作用。
  13. The end result is that the semiconductor and metal form two strips side by side, with all the electrical contacts ? two for sensing a voltage, two for passing a current in and out ? along the free edge of the semiconductor

    結果半導體與金屬變成相鄰的長條狀，所有電性接點都接到半導體的露出端：包括兩個用來測量電壓的接點，以及兩個分別讓電流流進與流出的接點。
  14. The conclusions obtained as follows : firstly, the structure ' s free frequency is decreased by the reduction of the mechanical property of the material with the increasing temperature ; secondly the thermal stress produced by the temperature gradient may decrease or enlarge the structures natural frequency ; thirdly, the variety of natural frequency of the alloy structures effected by the heat effect apparently higher than that of the composite material structures

    最後，採用ansys程序分析了合金材料、復合材料的板、彈體結構的熱振動特性。在不同的熱載條件下，取得以下結論：升溫導致的材料機械性能下降都會降低結構固有頻率，而溫度梯度產生的熱應力可能降低也可能提高結構的固有頻率；金屬材料結構的固有頻率受溫度的影響要比復合材料結構的固有頻率受溫度的影響要明顯。
  15. Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors

    鐵磁半導體的電子能態密度和半金屬性質研究
  16. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  17. Complementary metal oxide semiconductor cmos

    互補性氧化金屬半導體
  18. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  19. In order to meet the requirement of market economy and wto, the related department of our government has published the code of related with bill quantity of construction works, and has put forward the bill - of - quantity model in july 2003. based on the information above, we put forward the study of the bill - of - quantity model theory and its application in this paper. according to the advanced experience of engineering cost management in developed country and the present condition of engineering cost management in our country, this paper comes up with the reformation concept about engineering cost management

    中小企業融資都依託著一個包括外源融資與內源融資、債務融資與權益融資等多種融資方式和資金屬性的多層次、多側面的融資體系，為了支撐起這樣一個復合型體系，各國都在市場經濟的大環境下，不斷完善包括政策、法律、法規、金融服務、貸款擔保、專業化產權交易系統和社會輔助體系在內的環境建設，並在企業治理結構現代化建設方面加強了宏觀引導。
  20. At present, the studies on this are mainly focus on the surface geometry structure. little is payed for the electronic structure. in this dissertation, the surface properties of high miller index surface of metals and semiconductors were studies by using the molecular dynamics method, the scattering theoretical method and the ab initio quantum mechanical molecular dynamics simulations

    金屬和半導體材料的高密勒指數表面是目前表面科學研究的一個熱點問題，也是值得更進一步研究的問題，目前的研究主要集中在對表面幾何結構的確定，而對表面電子特性的認識幾乎很少涉及，本文根據目前實驗上對一些表面已有的研究結果，在理論上對一些金屬、半導體的高密勒指數表面的表面能和表面電子結構進行了研究。
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