金屬薄條 的英文怎麼說

中文拼音 [jīnzhǔtiáo]
金屬薄條 英文
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  • : Ⅰ名詞1 (金屬) metals 2 (錢) money 3 (古時金屬制的打擊樂器) ancient metal percussion instrum...
  • : 屬名詞1 (類別) category 2 [生物學] (生物分類系統上所用的等級之一) genus 3 (家屬; 親屬) fami...
  • : 名詞[方言] (浮萍) duckweed
  • : Ⅰ名詞1 (細長的樹枝) twig 2 (條子) slip; strip 3 (分項目的) item; article 4 (層次; 秩序; 條...
  • 金屬 : metal
  1. It consists of two thin strips of dissimilar metals fused together.

    它是由兩的不同片焊接在一起而構成。
  2. With metal fatigue in material mechanics, this paper deduces the limestone fatigue curve of longmen grottoes by means of marble s one within the error permission. by the experiment elects the crucial factors of current vibration environment in longmen grottoes, the author contrasts the result of the experiment with its fatigue curve referred above and analyses the fatigue effect of longmen grottoes. finally, it is pointed out that after longmen grottoes have being suffered weathering and water - erosion more than 1500 years, the vibration environment is becoming an crucial factor leads to fatigue effect, especially in those weak surface carvings just like the crossings of several rifts, serious weathering places, etc

    借鑒材料力學中疲勞破壞的研究手段,在誤差允許范圍內用大理巖疲勞曲線推導出門石窟石灰巖疲勞曲線。通過對石窟實際振動環境中典型要素的抽取和振動試驗,將試驗結果與疲勞曲線進行對比,分析了門石窟的疲勞破壞效應。文章指出,在經歷了1500多年的風化和流水溶蝕后,振動環境已成為導致門石窟某些弱點如多裂隙交叉點嚴重風化酥解的壁面雕刻品等產生疲勞破壞的重要誘發因素。
  3. It is formed when an irritant gets inside of a shell and the shell protects itself by coating the irritant with the same material of its lining. in essence it is formed in the same way pearls are formed

    在菲律賓,常見的珍珠母工藝品是茶杯墊,一般用從珍珠貝殼內側剝離出來的珍珠母貼在基板上,然後用一很窄的片鑲邊。
  4. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2膜的優化工藝件,當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時,獲得了織構程度良好的ceo _ 2種子層膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄,工藝件難以控制,並且退火延長了膜的制備時間,因此,本論文又採用了兩步生長法沉積ceo _ 2種子層,即:先在ni - w基帶上沉積一層約15nm的ce膜,再通入氧化氣氛(水蒸汽) ,繼續進行膜沉積。
  5. The critical crack and stress put forward provides theoretic foundation for monitoring portal machine. 3. applying steady theory of board, studying the problem of early curvature, flexibility model, welding remaining stress, elastic transmutation and brace condition and so on, conclude that structure of beam is primary place where metal structure of portal crane lose stabilization and the break of main beam is result of losing partial stabilization of main board

    文章提出的界限應力和臨界裂紋對于港口機械的監測提供了理論依據; 3 、運用板的穩定理論,探索了作為壁構件的門機結構在失穩破壞中所涉及到的初曲率問題、彈性模量問題、焊接殘余應力問題、彈塑性變形問題以及支承件問題等,得出了門機結構發生失穩破壞的主要部位為臂架結構,且主臂架的折斷是由於受壓翼板局部失穩引起整體破壞; 4 、探討了焊接對結構承載的影響。
  6. The same with normal metal film, fe0. 3cu0. 7 ( 500nm ) granular film have positive coefficient of temperature. the negative resistance is observed in fexcu ( 1 - x ) granular film under certain condition. this characteristic of negative resistance is weakened or changed to positive with the change of thickness of film, ratio of fe atom to cu atom, anneal, test temperature

    N ) fecu顆粒膜月一i特性研究發現,極小電流下電阻測量具有不確定性; fe cu矚00川)顆粒膜己與普通膜一樣,具有正的溫度系數; f民c山x顆粒膜在一定件下存在負阻現象,並且隨顆粒膜厚度、鐵銅原子比、退火件、溫度的改變分別存在負阻特性的減弱或向正阻特性的轉變。
  7. The main research findings were as follows : nickel had a higher catalysis than iron in the growth of cnts, and the thickness of catalyst affected the diameter of cnts. compared graphite and iron, when monocrystalline silicon was used as the substrate, cnts had a higher purity

    通過sem和tem分析了不同件下產物的形貌和結構,取得以下主要結果:在兩種單催化劑中,鎳的催化活性高於鐵的催化活性,催化劑膜的厚度決定著生長納米碳管的直徑。
  8. 2. fabricating uniphase fe _ 3o _ 4 film by dc magnetron sputtering, the influence of sputtering power, annealing temperature is discussed in detail and the optimum fabricating condition is found. 3. the influence of ta buffer introduced to fe _ 3o _ 4 film is investigated in detail

    2 .研究以磁控反應濺射法制備單相成分的fe _ 3o _ 4膜時,濺射功率、晶化溫度對膜結構的影響,得到磁控反應濺射制備半fe _ 3o _ 4的最優件。
  9. Up to date, it is still very hard to grow gan bulk crystals, so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices. at the same time, the rapid progress on devices requires better ohmic contact between metals and gan, so much more research work must be carried out at once

    由於gan體單晶難以制備,生長高質量的膜單晶材料是研究開發gan基器件的基本前提件,同時器件的發展對電極的制備提出了更高的要求,因而研究電極與gan的接觸成為必然。
  10. With mocvd film technology, film chemical composition is easier to control, deposition temperature lower, deposition speed higher, deposited film more compact, homogenous and flat. in this paper, firstly, the study of fgms, the study of cvd and mocvd, and the nucleation mechanism have been introduced. secondly, the fabracations of metal / metal and metal / ceramic fgms have been reported

    本文在介紹功能梯度材料的研究進展, cvd 、 mocvd技術的研究概況以及mo ( co ) _ 6 , fe ( co ) _ 5的成膜機制和工藝件之後,著重報道了利用mocvd技術制備陶瓷膜,陶瓷功能梯度材料。
  11. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅膜,我們採用有機源和二氧化碳氣源,首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅膜,確定了生長高質量氧化鋅膜的優化件;研究了不同的襯底溫度和退火溫度對氧化鋅納米膜質量的影響。
  12. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅膜,我們採用有機源和二氧化碳氣源,首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅膜,系統地研究了生長件以及襯底表面氧化層對膜質量的影響,確定了生長高質量氧化鋅膜的優化件;為獲得p - zno材料,克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難,我們通過熱氧化zn3n2的方法制備了p - zno ,獲得了一系列研究結果: 1 、詳細研究了氣體流速比,襯底溫度和射頻功率實驗參數對氧化鋅膜特性的影響。
  13. The thinner uranium foil is better for neutron measurement, so the standards is designed to be made into thin disc ( thickness 1mm and diameter 40mm ) and will be combined with matrix properly to simulate the item which to be measured

    根據中子測量的經驗,認為做成片狀較好,且鈾層的厚度越越好,但現在所具備的製作鈾片的件最只能做到1mm厚。
  14. In this thesis, the zns, znse films and znse quantum dots ( qds ) have been obtained by metalorganic chemical vapor deposition ( mocvd )

    本論文利用有機化學氣相沉積( mocvd )系統控制生長件制備了zns 、 znse膜和znse量子點。
  15. Acmr is a kind of cold - formed thin - walled steel structure. stability of these structures is a critical factor on their load - carrying capacity. furthermore, cold - formed thin - walled steel structure is sensitive to initial defectiveness and boundary condition, so all these issues need to be studied further

    拱型波紋屋頂結構于冷彎壁構件,穩定問題是影響其承載能力的關鍵因素,而且冷彎壁構件對初始缺陷、邊界件相當敏感,這些都值得進一步的研究。
  16. This means that the dielectric property changes with height and allows a slight increase in the speed of a radio wave as we move upwards through the atmosphere. this in turn means that if a radio wave moves away from the earth at an angle less than 90 degrees, then the upper part of the wave travels faster than the lower part. therefore even under normal conditions this can in effect bend, or refract, the wave back down to earth

    其中一種顯著的現象是:在一定的氣象件下,在大氣邊界層尤其是在近地層中傳播的電磁波,受大氣折射的影響,其傳播軌跡彎向地面,當曲率超過地球表面曲率時,電磁波會部分地被陷獲在一定厚度的大氣層內,就好像電磁波在波導管中傳播一樣,稱為大氣波導傳播,形成波導傳播的大氣層稱為大氣波導層。
  17. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型氧化物半導體,是一種重要的無機功能材料,可用於製作電介質材料、光催化膜、減反射塗層、氣敏傳感器等。 tio _ 2膜具有優異的光催化性能,抗光腐蝕,在酸性件下難溶,對光穩定,無毒等。
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