金屬襯底 的英文怎麼說

中文拼音 [jīnzhǔchènde]
金屬襯底 英文
metallic substrate
  • 金 : Ⅰ名詞1 （金屬） metals 2 （錢） money 3 （古時金屬制的打擊樂器） ancient metal percussion instrum...
  • 屬 : 屬名詞1 （類別） category 2 [生物學] （生物分類系統上所用的等級之一） genus 3 （家屬; 親屬） fami...
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 金屬 : metal
  1. Preparation of steel substrates before application of paints and related products - non - metallic blast - cleaning abrasives - almandite garnet

    塗料和相關製品使用前鋼底襯材料的制備.非金屬噴砂清理磨料.鐵鋁榴石
  2. Standard practice for discontinuity holiday testing of nonconductive protective coating on metallic substrates

    金屬襯底上非傳導保護塗料的間斷性
  3. Preparation of steel substrates before application of paints and related products - specifications for non - metallic blast - cleaning abrasives - staurolite

    塗裝油漆和有關產品前鋼襯底預處理.噴射清理用非金屬磨料的規范.十字石
  4. The exterior and the install sizes all in the light of iso international criterion to design and make, the whole structure adopt after pull pattern of electrical engine direct link my companys patent, by centernog prop up, the structure is tightly, teardown and maintenance is convenient the bound of capability is broad the alnico of passing wrestdistance uses of advanced thulium material permanent magnet nd fe boron to make inside and outside magnet ; uses of the most streampadd nonmetallic material pad f46 inside to be made - up isolationsheath assembled and its provided with high strength dynam capability

    ，整體結構採用電機直聯的后拉式我公司專利，由中間支架支撐，結構緊湊，拆卸維護方便，性能范圍寬傳遞扭矩的磁鋼選用先進的稀土材料永磁體「釹鐵硼」製造內外磁體，使用最新型非金屬材料內襯f46製成的隔離套組合具有高強度的力學性能，徹底消除了一般磁力泵具有的磁渦流損耗，提高了整機的效率。
  5. Coatings for fire protection of building elements - code of practice for the use of intumescent coating systems to metallic substrates for providing fire resistance

    建築構件的防火塗層.防火用金屬襯底膨脹塗層使用實用規程
  6. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  7. In the third section, i. e. chapter five, the normal raman spectra of nil2, cul2, pdl2 powder are studied under the excitation of laser with the wavelength of 632. 8nm and aqueous silver colloid is prepared by pulsed laser ablation, from which the surface enhanced raman spectra of the three compounds are obtained. after preliminary assignment, the identical and different features of vibration of the compounds due to the different central metal atoms are analyzed

    第三部分，即論文的第五章，我們以632 . 8nln為激發波長研究了nilz 、 culz和pdl :三種新型金屬有機化合物粉末的正常拉曼光譜，並且以脈沖激光刻蝕法制備了水銀膠，以其為襯底研究了三種化合物溶液在其上的表面增強拉曼光譜，通過對其拉曼光譜進行了初步指認，了解由於中心原子的不同，三種金屬有機化合物分子振動的相同和區別。
  8. For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation

    3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。
  9. Preparation of steel substrates before application of paints and related products - specifications for non - metallic blast - cleaning abrasives - specification for fused aluminium oxide

    塗料和相關製品使用前鋼襯底的制備.非金屬噴砂清理磨料的規范.熔融氧化鋁規范
  10. At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe

    目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。
  11. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
  12. Their structures and optical properties were compared and analyzed. 2 the silver films were prepared at the room temperature and 77k on glass substrates. the microstructures and optical properties of the ag films were studied with the xrd, sem and ellipsometer, respectively

    常溫和77k溫度玻璃襯底上金屬（ ag 、 cu ）薄膜的制備，以及常溫和77k玻璃襯底上ag薄膜的表面結構及光學性質的比較研究。
  13. Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently

    一種微電子電路器件，其中的無源元件及內部金屬連線直接在絕緣襯底上形成，然後再加上有源半導體器件（通常以大圓片形式給出） 。
  14. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  15. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  16. Standard test method for pressure mottling and blocking resistance of organic coatings on metal substrates

    金屬襯底表面有機塗層耐壓力斑跡和抗粘連性標準試驗方法
  17. Standard practice for porosity in gold and palladium alloy coatings on metal substrates by vapors of sodium hypochlorite solution

    用次氯酸鈉液的蒸氣測定金屬襯底上金和鈀合金覆層孔隙度的標準實施規范
  18. In general, the serrs enhancement can also get a contribution from a so - called " chemical " sers enhancement mechanism, which is based on the specific interaction between the target molecule and the metal substrate

    但是，通過單壁碳納米管分子和金屬襯底之間的相互作用也有一部分拉曼信號來自於所謂的化學增強的貢獻。
  19. 2 ) sbd was made using zno thin film as the active layer, which is a first time attempt. - 2 - a ) first time, high c - axial orientation zno thin film was deposited on al membrane supported on si substrate

    A ）利用磁控濺射技術，首次在si襯底上，以金屬al做過渡層制備具有高c軸取向的zno晶體薄膜。
  20. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
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