金屬鎵 的英文怎麼說
中文拼音 [jīnzhǔjiā]
金屬鎵
英文
gallium metal-
High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc
高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。With the soaring development in cosmonautics, aeronautics, telecommunication, development of new lighting and alloy material, there are tremendous demands of gallium in both domestic and international market
隨著航天、航空、通訊、照明新材料、合金新材料等高科技技術的迅猛發展，國內外市場對金屬鎵這一稀有金屬的需求將會迅速增加。Vital chemicals co., ltd., a large foreign invsted company, is a leading producer of selenium 、 tellurium 、 bismuth 、 cadmium 、 antimony 、 indium 、 gallium 、 sulfur and its chemicals
先導（清遠）稀有金屬化工有限公司是一家專業生產和銷售硒、碲、鉍、鎘、銻、銦，鎵，硫等高純金屬材料及其化合物的大型外資高新技術企業。For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation
3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎的多層量子井發光二極體結構。Icp - aes determination of the metal components ga in sn in dental material
法測定金屬牙科材料中鎵銦錫Numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet
高功率電磁脈沖對砷化鎵金屬半導體場效應管的影響The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。Low - dimensional gan materials, including nanorings, nanoribbons and smooth nanowires have been synthesized by reacting gallium and ammonia using ag particles as a catalyst on the substrate of mgo single crystals
通過使用金屬鎵與氨氣反應的方法，在單晶氧化鎂基片上用金屬銀作催化劑，合成出gan納米環、納米帶和納米線。Regular arrays of gan nanorods have been synthesized by reacting gallium and ammonia using au as a catalyst on mgo single crystal substrate treated by chemical etching
通過金屬鎵與氨氣反應，在經化學刻蝕后的mgo單晶基片表面，以金作催化劑制備出規則排列的gan納米棒陣列。Beijing jiya is currently selling its 4n gallium products to usa, united kingdom, germany, netherland, japan, and korea, and also to local end users all over mainland china
目前吉亞公司生產的金屬鎵已遠銷美國、英國、德國、荷蘭、日本、韓國等國家，同時公司還擁有大量國內客戶分佈在全國各地。分享友人