鉍粒 的英文怎麼說

中文拼音 []
鉍粒 英文
bismuth granular
  • : 名詞[化學] bismuth (83號元素, 符號 bi)
  • : Ⅰ名 (小圓珠形或小碎塊形物) small particles; grain; granule; pellet Ⅱ量詞(用於粒狀物)
  1. Pilsenite is a rare mineral and its information is deficient. the first found pilsenite in china is in gaozhuang, henan province. pilsenite, associated with pyrrhotite, pyrite, hessite, gold, produced in pyrrhotite - polymetallic stage. three bismuth - tellurides produced in gaozhuang are well concordant with the standard pilsenite in composition, and other three are different from any of known bismuth - tellurium minerals. single crystal diffraction were made on a larger mineral grain of pilsenite. au growth and decline together with bi and te in ores and wall - rocks, which suggests that bi and te play a important role in migration and enrichment of au

    經電子探針分析,高莊金礦有多種碲化物,有三礦物的成分與標準葉碲礦完全一致。對一較大顆的葉碲礦做了單晶x射線衍射分析。 au與bi在礦石和圍巖中的含量呈共消長關系, te與bi可能對au ag的遷移富集起了重要作用。
  2. The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched. the smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero. the limit size of bismuth ruthenate partical is 0. 56 m

    研究了各相粉體平均徑對膜層性能的影響,結果表明:釕酸平均徑越小,膜層的方阻值越小,電阻溫度系數偏正,重燒變化率越接近零值,球磨工藝的極限平均徑為0 . 56 m 。
  3. Square resistance of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear increased and tcr of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was near - linear decreased with increase of content of ag. the electric conduction model of bapb _ ( 1 - x ) bi _ xo _ 3 based thick films was formed. bapb _ ( 1 - x ) bi _ xo _ 3 based thick film is actually conductive with lead and bismuth oxide, the main factors on the properties of thick film is the electric resistance and contact resistance of conductive particulates ; the electric conduction model of ag - bapb _ ( 1 - x ) bi _ xo _ 3 based thick film : the general structure of conductive network is constructed by conductance chain of ag and is submerged into bapb _ ( 1 - x ) bi _ xo _ 3 based conductive ceram

    本文認為: bapb _ ( 1 - x ) bi _ xo _ 3厚膜電阻是一種摻有鉛、氧化物的導電陶瓷燒結體,影響厚膜電阻導電性能的主要因素是導電顆自身電阻與顆間接觸電阻;厚膜電阻摻銀后的導電微觀結構是由許多微小串聯或並聯的ag顆組成的導電鏈構成的結構復雜的多維導電網路,此導電網路被「淹沒」在bapb _ ( 1 - x ) bi _ xo _ 3導電燒結體中。
分享友人