鋯酸鈦酸鉛 的英文怎麼說

中文拼音 [gàosuāntàisuānqiān]
鋯酸鈦酸鉛 英文
lead zirconate titanate
  • : 名詞[化學] zirconium (40號元素, 符號 zr)
  • : 酸構詞成分。
  • : 名詞[化學] (金屬元素) titanium (ti)
  • : 鉛名詞1. (金屬元素) lead (pb) 2. (鉛筆心) lead (in a pencil); black lead
  1. Common ceramic elements are barium titanate and lead zirconate-titanate.

    普通的陶瓷元件分別是鋇和
  2. Lead zirconate titanate

  3. The electrical properties of yttrium - modified lead zirconate titanate ferroelectric thin films

    釔摻雜鐵電薄膜的電性能研究
  4. The electrical properties of cobalt - modified lead zirconate titanate ferroelectric thin films

    摻雜鈷對鐵電薄膜電性能的影響
  5. Research progress of heterostructures of lead zirconate - titanate thin films on silicon substrate

    硅基鐵電薄膜異質結構的研究進展
  6. The preparation of pzt ferroelectric thin films and its application in pyroelectric ir sensor

    鐵電薄膜的制備及在紅外探測器中的應用
  7. In our experiment, the structure of the pzt thin film sample is pt / pzt / ybco / lao. lao is the substrate

    本文基於前人的實驗理論,率先研究了比為94 6的薄膜的性能。
  8. 0 - 3 pzt / pvdf piezoelectric composite is a kind of piezoelectric material, which integrates with merits of pzt and pvdf respectively and counteracts deficiencies of them. so, it is used widely in every fields of modem social life

    0 ? 3型pzt / pvdf壓電復合材料是一種綜合了( pzt )和聚偏二氟乙烯( pvdf )的自身優點,彌補它們自身缺陷的一類壓電材料,因而廣泛地應用於現代社會生活中。
  9. Furthermore, on the basis of adopting pzt ( lead zirconium titanate ) as the switched - capacitor dielectric, the output current of a single circuit unit is eight times as large as that of the former single circuit unit with identical technology process parameters

    針對採用鐵電薄膜( pzt )作為開關電容介質的設想,在工藝參數不變的情況下,計算機模擬結果表明,其單個單元電路輸出電流可提高7倍。
  10. In recent years, lead zirconium ti tanate pb ( zrxtii - ? on, ( pzt ( x / l -. x ) ) ferroelectric thin films have been extensively applied to many high - tech fields because of their excellent ferroelectric properties such as high dielectric constant, low dissipation factor, nonvolatility and so on

    ( pzt )薄膜具有優良的介電、鐵電、壓電和光電特性,且抗輻射性強,不揮發,已廣泛地應用於微電子,集成光學和微機械繫統( mems )等高技術領域。
  11. The influence that the zr / ti ratios have on the ceramic crystal structure and its properties are studied through the research carried out about the relative respects of the fabricated samples. the increase of zr / ti ratio can result in the crystal structure transformation from the tetragonal to the rhombohedral, it can also induce the weakness in the stability of the ceramic crystal structure, for example, the drop in the curie temperature. in order to enhance the relative low mechanical quality factor of pzn - pzt system piezoceramics, component addition pb ( mn1 / 3sb2 / 3 ) o3 ( hereafter abbreviated as pms ) are introduced in to form a new psudo - tetragonal system ceramics

    為獲得具有高的機電耦合系數kp ,高的機械品質因數qm的高性能壓電陶瓷,採用二次合成法制備了不同zr ti比的鈮鋅-基( pzn - pzt )三元系壓電陶瓷材料,研究了zr ti比變化對陶瓷結構和性能的影響規律,發現zr ti比增大除了可以使陶瓷的相結構由四方相向三方相轉化外,還降低了陶瓷的結構的穩定性,使tc溫度下降。
  12. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鑭( plzst )晶體中出現的幾種缺陷:包裹體、開裂、位錯、枝晶,分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  13. According to this, the research of the fatigue properties of the ferroelectric films was proposed. the lead zirconate titanate ( pzt ) film was prepared by a metal - organic decomposition method. the films " physical properties were analysed by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ) and hysteresis loops

    然後採用金屬有機物熱分解法制備出作為研究對象的pb ( zr , ti ) o _ 3 ( pzt )薄膜,用x射線衍射儀、掃描電鏡和rt6000s鐵電測試儀測量表徵鐵電薄膜。
  14. Recently, la - modified lead titanate ( pb1 - xlax ) ti1 - x / 4o3 ( plt ) solid solution has received considerable attention for its interesting dielectric, ferroelectric, pyroelectric, piezoelectric, and nonlinear electro - optic properties. researchers recently proposed that it might serve as an alternative material to pzt films in the nvram applications

    近來,摻鑭的薄膜( plt ( x ) , x為鑭的摩爾百分比)以其良好的性能引起了研究者的注意,人們設想用它來代替在這方面的應用。
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