鐵電性能 的英文怎麼說
中文拼音 [tiědiànxìngnéng]
鐵電性能
英文
ferroelectric properties-
Ferroelectric properties of optically active polymers
旋光性聚合物的鐵電性能Effects of mgo and srtio3 doping on pmn - pt - bt relaxant ferro - electric ceramics
系鐵電陶瓷材料介電性能的影響Effects of doping on sintering process and dielectric properties of pmn ceramics
鐵電陶瓷燒結工藝和介電性能的影響The electrical properties of yttrium - modified lead zirconate titanate ferroelectric thin films
釔摻雜鋯鈦酸鉛鐵電薄膜的電性能研究The electrical properties of cobalt - modified lead zirconate titanate ferroelectric thin films
摻雜鈷對鋯鈦酸鉛鐵電薄膜電性能的影響Based on decreasing the production cost and enhancing the high rate performance of this material, this paper adopted a two - step solid - state reaction to improve lifepo4 ` s behavior mainly using carbon coated or doped and mg2 + doped method
本文從降低材料生產成本的同時提高材料的大電流放電性能出發，採用球磨高溫固相法主要針對碳摻雜/包覆和金屬離子摻雜對磷酸亞鐵鋰進行改性。Investigation of domain and pyroelectric properties of lanthanum - doped lead titanate ferroelectric thin films
摻鑭鈦酸鉛鐵電薄膜的電疇與熱釋電性能研究Measurement methods of magnetic properties of electrical iron
電工用純鐵磁性能測量方法The effect of different electrode on the dielectric properties of lanthanum - doped lead titanate ferroelectric thin films
不同電極形式對摻鑭鈦酸鉛鐵電薄膜的介電性能的影響The application of radio frequency magneto - controlled sputtering was introduced briefly. in this research, multiferroelectric magnetoelectric lcmto with excellect crystal and electric properties which keeps substitution each other between la and ca as well as mn and ti were prepared by traditional ceramic process, and the film was prepared by radiofrequency magneto - controlled sputtering
本研究中採用傳統的陶瓷燒結方法及射頻磁控濺射技術成功制備了具有優良結晶性能和電性能的la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜。Effects of doping on dielectric properties of pmn - 10pt ceramics
鐵電陶瓷介電性能的影響The study on the dielectric properties of ba zrxti1 - x o3 relaxor ferroelectric
3弛豫鐵電體的介電性能研究Ferroelectric ( ba, sr ) tio3 thin films have excellent ferroelectric / dielectric properties, and own good application prospect in tunable microwave devices, dynamic random access devices, and pyroelectric detector devices
鐵電鈦酸鍶鋇薄膜具有十分優越的鐵電介電性能，在可調諧微波器件、動態存儲器件，以及熱釋電探測器等方面具有很好的應用前景。This paper investigated the preparation and properties of multiferroelectric magnetoelectric lcmto bulk and film which keeps substitution each other between la and ca as well as mn and ti
本文就la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜的制備和性能進行研究。When the time of heat preservation prolonged, the intensity of most orientation of perovskite phase became stronger, and the full width at half maximum ( fwhm ) decreased. when the time of heat preservation was 80 seconds, the intensity of ( 100 ) and ( 110 ) orientation began to decrease
循環次數從1次增加到3次， plt薄膜的（ 100 ）和（ 200 ）峰的衍射強度逐漸增強，薄膜的結晶性提高，鐵電性能逐漸增強，循環4次濺射后，薄膜的結晶性和鐵電性開始下降。The substitution of a - site cation ln can induce significant effect on the magnetization and polarization, nevertheless b - site cation can induce more effect on the polarization of perovskite structure. as a result, the doping of titanate which had typical high dielectric behavior would have significant effect on the research and development of novel multiferroelectric magnetoelectric material
A位離子ln的取代可以對材料的磁化性能和極化性能產生影響，然而由於b位離子對鈣鈦礦結構的極化可能產生更大的作用，因而具有典型高介電行為的含ti鈣鈦礦結構的引入將可能對新型復鐵電性的磁電子材料的開發研究產生很大的影響並具有非常重要的科學意義。The core loss is an important criterion of its performance. if the core loss is too large, it will be heated and the efficiency will be decreased when add the exciting current to the stator coils
鐵損是評判電機鐵芯性能的一個重要指標，如果鐵損太大，在定子繞組中加勵磁電流后則會產生發熱和效率下降等不良現象。4. mixture was made of chiral additive and liquid crystal polymer, which properties were studied. whether the mixture has ferroelectricity has been discussed, which would establish some bases for the research and application of the liquid crystal display materials and nonlinear optical materials in future
將液晶手性添加劑和液晶聚合物共混，並研究了共混物的性能，探討了共混型丙烯酸酯類液晶聚合物的鐵電性能，為將來的液晶顯示材料及非線形光學材料的研究及應用奠定了基礎。In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。But its high leakage current and poor retention is the main obstacle to its application. improving the quality of ferroelectric thin films and avoiding the reaction and diffusion between f - s interfaces is one of the crucial keys to overcome this problem. that is to say that the preparation and properties of ferroelectric thin films is compatible with the semiconductor integrated circuit
但是其漏電流過大和保持力差成為制約其實用化的最大障礙，攻克這一難題的關鍵之一就在於鐵電薄膜質量的進一步提高，盡量減少或者避免f - s界面的互擴散，也就是說鐵電薄膜的制備工藝和各項鐵電性能必須與半導體集成工藝兼容。分享友人