鐵電性 的英文怎麼說

中文拼音 [tiědiànxìng]
鐵電性 英文
ferroelectricity
  • 鐵 : Ⅰ名詞1 （金屬元素） iron （fe） 2 （指刀槍等） arms; weapon 3 （姓氏） a surname Ⅱ形容詞1 （形容...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  1. Chemical synthesis of ferrate iron and its electrochemical properties

    高鐵酸鹽的化學合成及高鐵電極的電化學性質研究
  2. In this thesis, the uper - iron alkaline batteries. utilizing insoluble ferrate ( vi ) - k _ 2feo _ 4 as cathode active material, was more systematically investigated by the mothods of eb, xrd, and cv

    本論文對以難溶高鐵酸鹽k _ 2feo _ 4為正極活性物質的水溶液堿性高鐵電池進行了較為系統的研究。
  3. Ferroelectric properties of optically active polymers

    旋光性聚合物的鐵電性能
  4. Preparation and characteristics of ferroelectric cathode

    鐵電陰極制備與性能實驗研究
  5. Effect of interface on properties of pzt ferroelectric thin films

    鐵電薄膜性能的影響
  6. The study of the properties of double - layer ferroelectric film

    雙層鐵電薄膜的性質研究
  7. The magnetoelectric coupling effect on the spin correlation for the ferroelectromagnetic system

    磁電耦合對于鐵電磁系統的磁性關聯的影響
  8. These results indicate that the phonon - pseudospin interaction should be taken into account for the physics properties in ferroelectric materials

    因此在研究鐵電材料物理性質時聲子的作用是不可忽視的。
  9. Multiferroelectric magnetoelectri materials have a spontaneous polarization that can be reoriented by an applied electric field, a spontaneous magnetization that can be reoriented by an applied magnetic field. these materials have been exploited as transducer, waveguides, switches, phase inverters, modulators, etc. which also find a lot of technological applications in radioelectronics, optoelectronics, microwave electronics in instrumentation

    這類材料同時具有鐵電和鐵磁材料的性能可以應用到傳感器，波導器件，轉換器，相位倒相器，變頻器，調節器等，在無線電電子學，光電子學，微波電子學等領域的發展具有重要意義。
  10. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  11. Based on recent published research, explanation about the experimental results was also given. remanent polarization and coercive field decreased with the increasing of la content. the crystal structure transformed from tetragonal to cubic when la concentration increased to 28mol %

    在薄膜的鐵電性質方面，隨著摻鑭含量的升高，剩餘極化和矯頑場逐漸降低；當鑭含量達到28mol時薄膜的結構從四方相轉變到立方相。
  12. The application of radio frequency magneto - controlled sputtering was introduced briefly. in this research, multiferroelectric magnetoelectric lcmto with excellect crystal and electric properties which keeps substitution each other between la and ca as well as mn and ti were prepared by traditional ceramic process, and the film was prepared by radiofrequency magneto - controlled sputtering

    本研究中採用傳統的陶瓷燒結方法及射頻磁控濺射技術成功制備了具有優良結晶性能和電性能的la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜。
  13. Xrd, sem, temperature and frequency dependence of dielectric constant, and hysteresis loop were measured to investigate and study structure, microstructure, dielectric and ferroelectric properties of barium titanate dielectric ceramics

    應用x光衍射譜、掃描電子顯微鏡、介電率的溫度與頻率依存關系以及電滯回線測量，調查和研究所制備的鈦酸鋇陶瓷的結構、微結構、介電和鐵電性質。
  14. This paper investigated the preparation and properties of multiferroelectric magnetoelectric lcmto bulk and film which keeps substitution each other between la and ca as well as mn and ti

    本文就la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜的制備和性能進行研究。
  15. When the time of heat preservation prolonged, the intensity of most orientation of perovskite phase became stronger, and the full width at half maximum ( fwhm ) decreased. when the time of heat preservation was 80 seconds, the intensity of ( 100 ) and ( 110 ) orientation began to decrease

    循環次數從1次增加到3次， plt薄膜的（ 100 ）和（ 200 ）峰的衍射強度逐漸增強，薄膜的結晶性提高，鐵電性能逐漸增強，循環4次濺射后，薄膜的結晶性和鐵電性開始下降。
  16. The substitution of a - site cation ln can induce significant effect on the magnetization and polarization, nevertheless b - site cation can induce more effect on the polarization of perovskite structure. as a result, the doping of titanate which had typical high dielectric behavior would have significant effect on the research and development of novel multiferroelectric magnetoelectric material

    A位離子ln的取代可以對材料的磁化性能和極化性能產生影響，然而由於b位離子對鈣鈦礦結構的極化可能產生更大的作用，因而具有典型高介電行為的含ti鈣鈦礦結構的引入將可能對新型復鐵電性的磁電子材料的開發研究產生很大的影響並具有非常重要的科學意義。
  17. The main points of this dissertation consist the following points : l. this dissertation has summarized basal theory and app. l ication prospect of ferroelectric liquid crystal, ferroelectric liquid crystal polymer and chiral additive. a kind of chiral additive of liquid crystal and two kinds of polyacrylates were designed here. 2

    本論文在緒論中總結了小分子鐵電性液晶、高分子鐵電性液晶及手性添加劑等液晶的基本理論與應用前景，並設計了一種液晶手性添加劑，兩種丙烯酸酯型聚合物。
  18. 4. mixture was made of chiral additive and liquid crystal polymer, which properties were studied. whether the mixture has ferroelectricity has been discussed, which would establish some bases for the research and application of the liquid crystal display materials and nonlinear optical materials in future

    將液晶手性添加劑和液晶聚合物共混，並研究了共混物的性能，探討了共混型丙烯酸酯類液晶聚合物的鐵電性能，為將來的液晶顯示材料及非線形光學材料的研究及應用奠定了基礎。
  19. In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased

    Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。
  20. But its high leakage current and poor retention is the main obstacle to its application. improving the quality of ferroelectric thin films and avoiding the reaction and diffusion between f - s interfaces is one of the crucial keys to overcome this problem. that is to say that the preparation and properties of ferroelectric thin films is compatible with the semiconductor integrated circuit

    但是其漏電流過大和保持力差成為制約其實用化的最大障礙，攻克這一難題的關鍵之一就在於鐵電薄膜質量的進一步提高，盡量減少或者避免f - s界面的互擴散，也就是說鐵電薄膜的制備工藝和各項鐵電性能必須與半導體集成工藝兼容。
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