鐵電的 的英文怎麼說

中文拼音 [tiědiànde]
鐵電的 英文
ferroelectrics
  • : Ⅰ名詞1 (金屬元素) iron (fe) 2 (指刀槍等) arms; weapon 3 (姓氏) a surname Ⅱ形容詞1 (形容...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 4次方是 The fourth power of 2 is direction
  1. Development of the ferroelectric ceramics in recent years has led to superior detection ability.

    近代所發明陶瓷具有優良檢測能力。
  2. A coplanar waveguide tunable bandpass filter using ferroelectric thin film

    基於共面波導傳輸線薄膜可調帶通濾波器
  3. Applying the monte - carlo simulation on the system, we obtain the introducing of the dipolar defects will decrease the coercive field

    Nte一carlo方法,研究了偶極缺陷對系統switching行為影響。
  4. Chemical synthesis of ferrate iron and its electrochemical properties

    酸鹽化學合成及高化學性質研究
  5. In this thesis, the uper - iron alkaline batteries. utilizing insoluble ferrate ( vi ) - k _ 2feo _ 4 as cathode active material, was more systematically investigated by the mothods of eb, xrd, and cv

    本論文對以難溶高酸鹽k _ 2feo _ 4為正極活性物質水溶液堿性高池進行了較為系統研究。
  6. Study on the x7r relaxor ferroelectric composite ceramics

    弛豫復相陶瓷研究
  7. Stress corrosion cracking of a batio3 ferroelectric ceramics

    3陶瓷應力腐蝕
  8. Ferroelectric properties of optically active polymers

    旋光性聚合物性能
  9. Effect of interface on properties of pzt ferroelectric thin films

    薄膜性能影響
  10. The study of the properties of double - layer ferroelectric film

    雙層薄膜性質研究
  11. Motor - cars and cinemas and aeroplanes suck that last bit out of them. i tell you, every generation breeds a more rabbity generation, with india rubber tubing for guts and tin legs and tin faces. tin people

    他們所剩下一點,都給汽車影院和飛機吮吸了,相信我:一代人比一代人更不象樣了,食道是橡膠管做,臉和兩腿是馬口,這是馬口群眾!
  12. A study of indium doped tin oxide as electrode of ferroelectric films

    用作薄膜研究
  13. The magnetoelectric coupling effect on the spin correlation for the ferroelectromagnetic system

    耦合對于磁系統磁性關聯影響
  14. No evidences of low - temperature phase transition were found for pbtio3, while the tetragonal - orthogonal and orthorhombic - rhombohedral phase transitions were present for batio3

    沒有發現鈦酸鉛存在低溫相變證據,而鈦酸鋇則存在四方正交和正交三角相變。
  15. These results indicate that the phonon - pseudospin interaction should be taken into account for the physics properties in ferroelectric materials

    因此在研究材料物理性質時聲子作用是不可忽視
  16. Relaxor ferroelectric single crystals, such as pb ( mg1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pmnt ) or pb ( zn1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pznt ), have been reported to exhibit an extremely large piezoelectric constant and excellent electrostrictive properties. such excellent performance makes it fully substitute the traditional piezoelectric ceramics and points to a revolution in ultrasonic transducers, actuators and micro - positioners, making relaxor - based piezocrystals the most promising materials for a broad range of advanced applications. however, it is difficult to grow the high quality single crystals because of the lack of valid thermodynamic data

    新型弛豫單晶鈮鎂酸鉛(簡稱pmnt )或鈮鋅酸鉛(簡稱pznt )是一類新興功能材料,其在準同型相界附近具有優于傳統壓陶瓷較高常數和致伸縮系數,可完全代替傳統陶瓷作為超聲換能器、致動器、微位移器等,使其成為領域研究熱點,但如何生長出滿足應用要求單晶材料卻一直是一個困擾問題。
  17. 0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material

    而且, sbn在制備過程中能夠避免pzt等材料鉛污染問題。
  18. Multiferroelectric magnetoelectri materials have a spontaneous polarization that can be reoriented by an applied electric field, a spontaneous magnetization that can be reoriented by an applied magnetic field. these materials have been exploited as transducer, waveguides, switches, phase inverters, modulators, etc. which also find a lot of technological applications in radioelectronics, optoelectronics, microwave electronics in instrumentation

    這類材料同時具有磁材料性能可以應用到傳感器,波導器件,轉換器,相位倒相器,變頻器,調節器等,在無線子學,光子學,微波子學等領域發展具有重要意義。
  19. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt制備方法有很多,其中溶膠?凝膠( sol - gel )方法可以和集成路( ic )光刻工藝相互兼容,處理溫度低,有大面積塗敷性能,能精確地控制組分,無需復雜真空設備,成本低廉,所以對于集成薄膜應用這種方法有很廣闊前景。本文利用sol - gel技術在摻錫in _ 2o _ 3透明導薄膜( ito )襯底和低阻硅襯底上成功地制備了pzt薄膜。運用了x射線衍射, sawyer - tower路和lcr橋分別對薄膜晶化溫度,結構和學性能進行了測試。
  20. In this thesis, we assumes the mont carlo method to simulate the antielectric materials based on the ising model and achieves expected results of scaling behavior between the area of the double loop and the frequency of imposed fields

    本文首先使用蒙特卡羅方法研究了反鐵電的標度行為,得到了面積與頻率及振幅標度關系,在低頻區,面積與頻率呈嚴格2 / 3次方指數律。
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