鐵電的 的英文怎麼說
中文拼音 [tiědiànde]
鐵電的
英文
ferroelectrics-
Development of the ferroelectric ceramics in recent years has led to superior detection ability.
近代所發明的鐵電陶瓷具有優良的檢測能力。A coplanar waveguide tunable bandpass filter using ferroelectric thin film
基於共面波導傳輸線的鐵電薄膜可調帶通濾波器Applying the monte - carlo simulation on the system, we obtain the introducing of the dipolar defects will decrease the coercive field
Nte一carlo方法,研究了偶極缺陷對鐵電系統的switching行為的影響。Chemical synthesis of ferrate iron and its electrochemical properties
高鐵酸鹽的化學合成及高鐵電極的電化學性質研究In this thesis, the uper - iron alkaline batteries. utilizing insoluble ferrate ( vi ) - k _ 2feo _ 4 as cathode active material, was more systematically investigated by the mothods of eb, xrd, and cv
本論文對以難溶高鐵酸鹽k _ 2feo _ 4為正極活性物質的水溶液堿性高鐵電池進行了較為系統的研究。Study on the x7r relaxor ferroelectric composite ceramics
弛豫復相鐵電陶瓷的研究Stress corrosion cracking of a batio3 ferroelectric ceramics
3鐵電陶瓷的應力腐蝕Ferroelectric properties of optically active polymers
旋光性聚合物的鐵電性能Effect of interface on properties of pzt ferroelectric thin films
鐵電薄膜性能的影響The study of the properties of double - layer ferroelectric film
雙層鐵電薄膜的性質研究Motor - cars and cinemas and aeroplanes suck that last bit out of them. i tell you, every generation breeds a more rabbity generation, with india rubber tubing for guts and tin legs and tin faces. tin people
他們所剩下的一點,都給汽車電影院和飛機吮吸了,相信我:一代人比一代人更不象樣了,食道是橡膠管做的,臉和兩腿是馬口鐵做的,這是馬口鐵做的群眾!A study of indium doped tin oxide as electrode of ferroelectric films
用作鐵電薄膜電極的研究The magnetoelectric coupling effect on the spin correlation for the ferroelectromagnetic system
磁電耦合對于鐵電磁系統的磁性關聯的影響No evidences of low - temperature phase transition were found for pbtio3, while the tetragonal - orthogonal and orthorhombic - rhombohedral phase transitions were present for batio3
沒有發現鈦酸鉛存在低溫相變的證據,而鈦酸鋇則存在四方正交和正交三角鐵電相變。These results indicate that the phonon - pseudospin interaction should be taken into account for the physics properties in ferroelectric materials
因此在研究鐵電材料物理性質時聲子的作用是不可忽視的。Relaxor ferroelectric single crystals, such as pb ( mg1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pmnt ) or pb ( zn1 / 3nb2 / 3 ) - pbtio3 ( abbreviated as pznt ), have been reported to exhibit an extremely large piezoelectric constant and excellent electrostrictive properties. such excellent performance makes it fully substitute the traditional piezoelectric ceramics and points to a revolution in ultrasonic transducers, actuators and micro - positioners, making relaxor - based piezocrystals the most promising materials for a broad range of advanced applications. however, it is difficult to grow the high quality single crystals because of the lack of valid thermodynamic data
新型弛豫鐵電單晶鈮鎂酸鉛(簡稱pmnt )或鈮鋅酸鉛(簡稱pznt )是一類新興的功能材料,其在準同型相界附近具有優于傳統壓電陶瓷的較高的壓電常數和電致伸縮系數,可完全代替傳統的壓電陶瓷作為超聲換能器、致動器、微位移器等,使其成為鐵電領域的研究熱點,但如何生長出滿足應用要求的單晶材料卻一直是一個困擾的問題。0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material
而且, sbn在制備過程中能夠避免pzt等鐵電材料的鉛污染的問題。Multiferroelectric magnetoelectri materials have a spontaneous polarization that can be reoriented by an applied electric field, a spontaneous magnetization that can be reoriented by an applied magnetic field. these materials have been exploited as transducer, waveguides, switches, phase inverters, modulators, etc. which also find a lot of technological applications in radioelectronics, optoelectronics, microwave electronics in instrumentation
這類材料同時具有鐵電和鐵磁材料的性能可以應用到傳感器,波導器件,轉換器,相位倒相器,變頻器,調節器等,在無線電電子學,光電子學,微波電子學等領域的發展具有重要意義。Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多,其中溶膠?凝膠( sol - gel )方法可以和集成電路( ic )光刻工藝相互兼容,處理溫度低,有大面積塗敷性能,能精確地控制組分,無需復雜的真空設備,成本低廉,所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜( ito )襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射, sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度,結構和電學性能進行了測試。In this thesis, we assumes the mont carlo method to simulate the antielectric materials based on the ising model and achieves expected results of scaling behavior between the area of the double loop and the frequency of imposed fields
本文首先使用蒙特卡羅方法研究了反鐵電的標度行為,得到了面積與頻率及振幅的標度關系,在低頻區,面積與頻率呈嚴格的2 / 3次方指數律。分享友人