閾值條件 的英文怎麼說

中文拼音 [yùzhítiáojiàn]
閾值條件 英文
threshold condition
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 條 : Ⅰ名詞1 （細長的樹枝） twig 2 （條子） slip; strip 3 （分項目的） item; article 4 （層次; 秩序; 條...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 條件 : 1. （客觀的因素） condition; term; factor 2. （提出的要求） requirement; prerequisite; qualification
  1. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正
  2. Firstly, the complex characteristics of the seal images caused in the process of producing conditions are analyzed. to solve these problems respectively, the circularity clusters and the ostu method are firstly used to realize the shape classification and threshold processing of different seal images. then the image denoise is performed well by scanning beam seed filling and labeling algorithm

    論文中首先分析了印鑒圖像由於蓋印條件造成的圖像本身的一些復雜特點，提出了運用圓形度聚類和最大方差比演算法對圖像進行形狀分類和閾值處理，隨后利用掃描線種子填充演算法和貼刪標簽演算法進行噪聲的去除等預處理。
  3. In the aspect of output characteristics, after applying the boundary conditions and the continue condition of two segments, the correlative dependence of average photon density in each segment has been obtained. combining this dependence with the threshold conditions, the theory foundation is settled

    在兩段式dfb激光器的輸出特性研究方面，利用邊界條件以及兩段之間的連續條件，導出了兩段平均光子數密度之間的依賴關系；這和兩段式dfb激光器的閾值條件表達式相結合，構造了本文研究激光器輸出特性的理論框架。
  4. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  5. Results show that, at any frequency, the mbsl field changes with the ultrasonic intensity, and the thresholds of ultrasonic pressures are increased with the ultrasonic frequency. the reason is that, the ultrasound with higher frequency needs higher pressure to make the bubbles provide enough energy to dissociate the water molecules

    超聲的驅動頻率的大小影響氣泡的膨脹比（氣泡在超聲作用下膨脹的最大半徑最小半徑） ，進而影響氣泡爆破時產生的溫度，導致不同頻率條件下氣泡地聲致發光閾值不同。
  6. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  7. By comparing to that of bbo, we can see that the threshold of clbo is lower than that of bbo. thus clbo provided another excellent crystal in dro if the pump power is low

    從結果可以看出，在平面波雙諧振下， clbo晶體的振蕩閾值低於同等條件下的bbo晶體，從而為連續波、長脈沖等能量較小的泵浦源提供了更加優良的可選晶體。
  8. Thus it is suited for generating new w avelength, especially in uv wavelength. we obtained the curves of the angle tuning, threshold and efficiency of clbo both in type - i and in type - ii phase matching ( pm ) in this paper, and compared to that of bbo

    論文完成了clbo晶體光參量振蕩在、類相位匹配時的角度調諧曲線，雙諧振、單諧振條件下的振蕩閾值及轉換效率曲線，並與bbo晶體進行了比較。
  9. General method of similar sequence mining based on time series is to transform time series into discrete character series and cluster them into different sets, then compute the euclidean distance between querying series and these sets to measure their similarity

    摘要時間序列數據庫中相似子序列的搜索，常用滑動窗口、分形插值逼近等方法將時間序列分割成各子序列，線性擬合各分段子序列，計算查詢序列與各子序列的歐氏距離，滿足距離閾值條件的為相似子序列。
  10. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  11. Based on these foundations, we give a perfect scheme of the bbo opos : single pass amplification coefficient of the opg under different pump intensity is calculated ; collinear type - i and type - ii phase matching tuning curve pumped by the q switch nd : yag various harmonics as well as noncollinear type - i tuning curve are calculated in details ; the effect of the walkoff for the nonlinear effect coefficient and the group velocity matching are analyzed ; the acceptance angle in parametric process is calculated ; the numerical threshold of the bbo opo is calculated ; the process of the saturation and depletion of the pump beam are analyzed ; the relationship of the conversion efficiency and reflectance of output mirror are discussed ; various linewidth controlling methods are discussed ; the improvement of the beam quality applying the unstable cavity is discussed ; and the crystal bbo design is considered

    在此基礎上，給出了一整套bbo - opo激光參數設計方案：計算了不同泵浦強度下的參量放大倍數；詳細計算了在nd : yag調q激光器各次諧波泵浦條件下的共線類和類相位匹配的調諧曲線，以及非共線類相位匹配調諧曲線；分析了走離角對非線性系數和群速匹配的影響；計算了參量過程的允許角；計算了bbo - opo的理論閾值條件；分析了飽和與泵浦光束的消耗過程；給出了轉換效率與超過泵浦閾值的倍數的關系；討論了轉換效率與輸出鏡反射率的關系；討論了線寬控制的各種方法；研究了利用非穩腔改善光束質量的方法；考慮了bbo晶體的設計。
  12. Research improvements are introduced in brief in this article, including selecting optical fiber and fiber - end surface preparation, fiber damage theory and threshold, coupling conductions, coupling efficiency

    文中簡要介紹了高功率激光耦合的關鍵技術，包括激光光纖耦合條件、耦合效率、光纖的選擇和端面處理、光纖損傷機理及其閾值條件等方面。
  13. In this paper the average field is used to describe the carrier in each segment based on the carrier distribution in two - segment dfb lasers and the strict coupled wave theory is used to describe the photon density. combined with these two methods, the threshold condition expression has been derived for the first time

    基於兩段式dfb激光器中的載流子分佈事實，本文對每一段內的載流子濃度用平均場方法處理；對于激光器內的光場分佈則應用嚴格的耦合波理論進行研究，通過將這兩種方法有機結合，首次導出了兩段式dfb激光器的閾值條件表達式。
  14. Splitting of 2nd - soliton is found and the reason of the splitting is analysed and then threshold value of splitting is gotten

    發現二階孤子脈沖的分裂現象，並分析了產生分裂的原因，同時得出了分裂產生的閾值條件。
  15. In part one, firstly, the dynamic equation of the drefl is deeply investigated and the stability of its stable solution is analyzed, the condition of the threshold is determined

    第一部分，首先對雙環摻鉺光纖激光器的動力學方程進行了深入研究，並對其穩定性進行了分析，確定了它的閾值條件。
  16. The introduction of the synchronization dimensional structure filter makes the laplace operator improve the segmentation quality with a high real time capability by the original arithmetic

    同步空間濾波器的引入，可使原演算法在低顏色閾值條件下獲得高質量的圖像分割結果，且該濾波器的行掃描數據錄入方式可以保證高實時性。
  17. We analyzed the polarizing character, threshold condition, raman shift of srs in different polarizing pumping light. in addition, the empirical formulas on stimulated raman scattering are given. theoretical analyses and experimental results are in good agreement

    對它們在不同偏振態泵浦光激勵下各級stokes的偏振特性、閾值條件、喇曼頻移等各參數進行了分析，並給出了經驗公式，其結果和實驗數據符合良好。
  18. The equivalent cavity model is used to deduce the threshold condition of the ecld, and the expression of the threshold carrier density n ( v ) when ecld is tuned to oscillate at different frequencies has been obtained. using the expression of n ( v ) and the carrier dependent refractive index, the simple basic equation describing the bistable characteristics has been derived after choosing an appropriate reference frequency nf

    通過建立等效腔模型來推導外腔半導體激光器的閾值條件，得到ecld在不同頻率v振蕩所需的閾值載流子密度n （ v ）表達式，利用該表達式及相關的折射率表達式，在選擇合適的參考載流子密度n _ f后，導出了一個描述雙穩所需的基本方程。
  19. In the section of theory, we mainly studied optical parameter effect, discussed physical mechanism of optical parameter laser and normalized coupled wave equation and got the solution. we also carried out the analysis of gain mode of optical parameter oscillation, studied the threshold condition, analyzed output characteristics and then achieved characteristic curve

    本文理論部分主要作了有關光參量效應方面的研究，探討了光參量振蕩器的物理機制、參量振蕩的歸一化耦合波方程，求解得到了參量振蕩器的耦合波函數，同時對光參量振蕩的增益模式進行了分析，研究了使參量振蕩的閾值條件，並對光參量振蕩器的輸出特性進行了分析，得到了特性曲線。
  20. Due to the intrinsic characteristics of the gaas material, semi - insulating ( si ) gaas pcss ' s have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss ' s made of other materials. the gaas pcss ' s can take on the particular phenomenon of lock - on effect when the thresholds of activating optical energy and bias field, which the devices demand, are meted simultaneously

    然而，由於gaas材料的固有特性，半絕緣gaas光電導開關在其工作性能上有明顯的優點，特別是在一定的光能和電場閾值條件下， gaas光電導開關能產生lock - on效應現象，所以gaas光電導開關的器件研究和實際應用開發成為光電導開關研究者所關注的焦點。
分享友人
分享到 Line

分享到臉書