閾溫度 的英文怎麼說

中文拼音 [yùwēndù]
閾溫度 英文
threshold temperature
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 溫度 : [物理學] temperature
  1. Bismuth ruthenate and silver were selected as conductor phases and the mixture of calcium oxide - alumina - silicon dioxide ( cao - al _ 2o _ 3 - sio _ 2 ) glass and lead oxide - boron oxide - silicon dioxide ( pbo - b _ 2o _ 3 - sio _ 2 ) glass was selected as inorganic binder phases. it was found that, with the increasing of volume fraction of silver and conductor phase, sheet resistivities descend and there are critical thresholds

    實驗發現，隨著功能相百分含量的增加，電阻膜層的方阻值逐漸減小，存在兩個臨界閾值，電阻溫度系數偏向正值;功能相中銀百分含量增加，膜層的方阻值逐漸減小，有一個臨界閾值，電阻溫度系數偏向正值。
  2. The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "

    認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。
  3. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  4. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  7. The sort, material composite, structure properties and conduction mechanisms of eca ( electrical conductive adhesive ) were discussed in this paper. then three types of ega specimens were designed and made, on which temperature cycles test from - 55 ? to + 125 ? and thermal aging at + 125 ? were carried out. changes of the adhesive strength, eca ' s bulk resistance and contact resistance under the environment stress were summarized and a detailed evaluation on these specimens was given

    本文在全面闡述導電膠的分類組成、物理結構、導電機理的基礎上，設計並製作了三批導電膠樣品，通過對樣品進行長時間的- 55 ? ? + 125溫度循環和125高溫存儲試驗，總結了導電膠粘接強度、體電阻和接觸電阻在環境應力下的變化規律，對三類樣品的長期可靠性做出了全面的評價，並結合導電膠電阻率和「穿流閾值」的計算機模擬，給出了提高導電膠可靠性和電導率的建議，介紹了國內外在高電導率高可靠性導電膠研製方面的一些最新進展。
  8. The results show that at a given substrate temperature, there is a compressive stress threshold, below which cbn phase is thermodynamically stable and p above which hexagonal bn ( hbn ) phase is thermodynamically stable

    結果表明，在給定的襯底溫度下，存在一個壓應力閾值，壓應力低於此值時立方相是熱力學穩定相，壓應力高於此值時，六角相是熱力學穩定相。
  9. Results show that, at any frequency, the mbsl field changes with the ultrasonic intensity, and the thresholds of ultrasonic pressures are increased with the ultrasonic frequency. the reason is that, the ultrasound with higher frequency needs higher pressure to make the bubbles provide enough energy to dissociate the water molecules

    超聲的驅動頻率的大小影響氣泡的膨脹比（氣泡在超聲作用下膨脹的最大半徑最小半徑） ，進而影響氣泡爆破時產生的溫度，導致不同頻率條件下氣泡地聲致發光閾值不同。
  10. Theoretically, the deformation of the fiber macro - bends forced by the shape memory alloy wire has been analyzed as the temperature over the acting threshold value of the sma. experimentally, a series results are obtained under the condition of the temperature changed from 60 to 89

    本文理論和實踐兩方面證明了分散式光纖溫度閾值傳感系統作為火災監測系統的可行性，並給出了不同溫度下的實驗結果，對實驗結果進行了分析和討論。
  11. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  12. In the uv light region, the absorption dramatically increases that is caused by the absorption of the films substance, hi addition, as the heat treatment temperature increases the absorption threshold slightly occurs " red shift "

    在紫外區，薄膜的吸光度急劇增大，而且，隨著熱處理溫度的增加，吸收閾值發生輕微的「紅移」 。這種降低是由於薄膜物質的吸收所致。
  13. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  14. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  15. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式；發現短溝道most閾值電壓溫度系數在高於室溫的一個較寬的溫區內近似不變，但在溫度較高時迅速增大。
  16. Temperature probe warning threshold ( s ) set successfully

    （溫度探測器警告閾值已成功設置。 ）
  17. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  18. A non - universal conductance critical exponent ( t = 2. 52 ) is observed in the system that is mainly concerned with hopping process at room temperature

    U ）系統地研究了滲流閾值附近復合材料在不同溫度下（ 7i00k ）的ac響應和磁阻抗效應。
  19. The result shows : 1 ) si precipitation threshold is different for different precipitation cases, which indicate the increasing tendency when the precipitation area increases and while the top tb at 85. 5 ghz decreases

    結果表明： 1 ） si降水閾值因降水個例而異，其隨降水面積增大而增大而隨雲頂溫度升高而降低。
  20. Once elps in solution reach a certain threshold temperature, they assemble into protein aggregates

    當這種蛋白質達到閾溫度時，便會聚集成聚合體。
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