閾移 的英文怎麼說

中文拼音 []
閾移 英文
threshold shift
  • : 名詞1. [書面語] (門坎兒) threshold; doorsill2. (界限; 范圍) threshold
  • : Ⅰ動詞1. (移動) move; remove; shift 2. (改變; 變動) change; alter Ⅱ名詞(姓氏) a surname
  1. Global change and the boreal forest : thresholds, shifting states or gradual change

    全球變化和北方森林:值,動態或逐漸變化
  2. Due to the image exists the instances of spin and distortion, in order adopting part small template proceed matching in order to reduce thereof impacts by as possible, besides small template matching may decrease calculation quantity, and it is propitious to real time of matching. looking into be on the impact of illumination, chromatism, under cloak circumstance template size and quantity select versus matching rate. matching primitive chooses gray, gray information measure large and most easy to obtain, but it is rather effected by illumination condition and chromatism, maximum matching rate restricted to 70 %

    瓷磚缺陷檢測採用待測圖像與標準圖像作差法,作差法對匹配精度要求較高,因此在匹配誤差存在的點進一步做了亞像素級的匹配;導彈目標識別,採用背景匹配的方法,統計背景動距離指導目標的識別;叢林中動目標識別,採用作差法找到目標區和背景區,分別採用不同的模板和值匹配,統計目標區匹配結果。
  3. In this essay i argue that the writing of american jazz age novelist f. scott fitzgerald responds to the developing national culture of his time, here described as an evolving relation between the marginality of the region and the hegemony of the center. like many of the characters in his novels, fitzgerald ' s perceived liminality from nation and canon - his work did not achieve repute until after his death - produced, paradoxically, dependence on those values the writer felt most distant from. to a far greater extent than hemingway, fitzgerald fictionalized the commodity culture of the american center which he, in time, came to reject in favor of a moral posture. fitzgerald ' s migration from the perceived margins of american literary discourse to status as a posthumous, centered canonical figure has three specific dimensions - the geographical, the canonical, and the moral - all of which combine to produce a significant ambivalence, beyond " modernist " credentials, in his life and legacy

    本文認為,美國爵士時代的小說家菲茨傑拉德的作品對于作者所處時代和處于發展之中的民族文化(即區域邊緣與國家霸權之間的演進關系)作出了回應.正如其小說中的許多人物一樣,菲茨傑拉德從國家和典律中感知到限性(他自己的作品直到死後才獲得盛譽) ,這使得他依賴于自己認為是最為邊遠的價值觀念.與海明威相比較,菲茨傑拉德在更大程度上將位於美國中心的商品文化小說化,而最終他又出於道德考量將它予以拒絕.菲茨傑拉德從明顯的美國文學話語邊緣向去世之後被經典化的中心地位的漂表現在地理、典律、道德三個方面.三者交織,使得學界關於他的紛爭超越了現代主義者身份問題,在關於他的人生和文學遺產問題上也是褒貶不一,眾說紛紜
  4. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管電壓偏分量的標準試驗方法
  5. The infrared absorption spectra and ultra - visible absorption spectra were measured. it was analyzed that the absorption side of in : linbo3 doped with virous concentrations of in shifted in comparison with that of pure linbo3 in normal site after the nb at li site was substituted completely

    測試了in : linbo _ 3晶體的紅外吸收光譜和紫外-可見吸收光譜,分析了不同摻雜濃度的in : linbo _ 3晶體的吸收邊相對動的現象,確定了in ~ ( 3 + )的摻雜值濃度為2mol 。
  6. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件值電壓隨溫度的變化關系、 c - v特性曲線以及亞特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉特性以及有效遷率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  7. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響,隨著溫度的增加,值電流呈指數增加,輸出功率和斜率效率分別呈拋物線和指數關系遞減,同時特徵溫度也減少,波長隨溫度的漂系數為0 . 24nm ,並且總結了一些溫度和結構設計方面的關系。
  8. Thirdly, in the environment of labview, several kinds of vis used for sensor signal test are designed, including wave generation, time domain measurement, filter disposal, frequency analysis, etc. after that, wavelet analysis in the application of one - dimensional signal de - noise is studied, threshold and translation invariance wavelet de - noise are realized, and wavelet de - noise vi for zero drift signal of the fiber optic gyro in fcs is designed using labview

    接著,在labview環境下開發了多種用於傳感器信號測試的虛擬儀器,具有波形發生、時域測量、濾波處理、頻譜分析等多種功能。隨后,研究了小波分析在一維信號消噪中的應用,實現了labview環境下的值法和平不變量法小波消噪,並利用labview設計了飛控系統中光纖陀螺零漂信號的小波消噪儀。
  9. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確,參數提取方便,適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明,盡管pmos較之nmos因輻照引起的值電壓漂的絕對量更大,但從mosfet值電壓漂量的擺幅這一角度來看,在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  10. According to the guidline, two nd : yag lasers have been designed and set up, one is end - pumped by lower output power ld using a selfoc micro lens, and the other is end - pumped by high output power ld using a pair of lenses are designed, and the characteristics such as output power and power stabilization of both solid - state lasers are investigated. thirdly, when an empty liquid crystal cell is inserted in the cavity of the nd : yag laser pumped by high power ld, the laser can operates in single axial mode. finally, according to the relationship between the laser output power and the longnitudinal a ld - end - pumped nd : yag laser sensor for displacement measurement has been investigated theoretically and demonstrated experimently, the results indicate that when the mean radius of pumping inside the laser cavity is far less than that of the oscilating laser mode, the exponential of the output power is a gauss function of the longitudinal positon of focused spot of ld pumping beam, both the measurement range and the sensitivity are dependent on the incident pumping power, as the incident pumping power is increased, the measurement range is enlarged and the sensitivity is improve d

    本文首先介紹了ld泵浦nd : yag激光器的發展狀況、主要特性及其應用,從四能級速率方程出發,推導了ld泵浦nd : yag激光器的值、輸出功率和斜效率的表達式,並簡述了激光器的工作原理、結構型式和倍頻方法;其次,以空間相關的速率方程為基礎,提出了ld端面泵浦nd : yag激光器的設計方法,給出了一定泵浦耦合方式下,振蕩光模尺寸、最佳輸出耦合率、泵浦光模尺寸、泵浦光焦斑位置等參數的選取依據,以此為依據,設計了自聚焦透鏡耦合小功率ld泵浦nd : yag激光器和透鏡組耦合高功率ld泵浦nd : yag激光器,對激光器的輸出功率和功率穩定性等特性進行了實驗研究;再次,在帶尾纖輸出的高功率ld泵浦nd : yag激光腔內插入一隻空液晶盒,觀察到了激光器以單縱模運轉;最後,根據泵浦光焦斑端面位置對激光輸出功率的影響規律,提出了ld端面泵浦nd : yag激光位傳感新方法,並進行了理論和實驗研究,研究結果表明:當激光晶體內泵浦光平均光斑半徑遠小於振西安理工大學碩士學位論文蕩光束腰半徑時,激光輸出功率的自然指數與泵浦光焦斑的縱向位置成高斯變化規律,測量范圍和靈敏度依賴于泵浦功率,隨著泵浦功率的增加,測量范圍擴大,靈敏度提高,當端面泵浦功率為7 . 24w (最大輸出功率為1 . 926w )時,激光位傳感器的測量范圍和靈敏度分別是13 . 045mm和0 . 148mw / pm 。
  11. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上,對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究,著重研究了bf _ 2 ~ -注入mos管值電壓漂( vth和vit 、 vot )與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  12. In the uv light region, the absorption dramatically increases that is caused by the absorption of the films substance, hi addition, as the heat treatment temperature increases the absorption threshold slightly occurs " red shift "

    在紫外區,薄膜的吸光度急劇增大,而且,隨著熱處理溫度的增加,吸收值發生輕微的「紅」 。這種降低是由於薄膜物質的吸收所致。
  13. We also experimentally observed the effect of sodium atom - molecular collisions and sodium atom - atom collisions on the line - shape and intensity of fluorescence spectra. in addition, the optically pumped infrared stimulated emission and energy transfer up - conversion process are observed in pr3 + : y2sio5, and with the threshold energy, temperature dependence and divergence angle for the stimulated radiation are measured

    此外還研究了摻雜在固體y _ 2sio _ 5中的pr ~ ( 3 + )的光泵紅外受激輻射和能量轉上轉換,分別測得了紅外受激輻射的值能量和發散角,並擬合得出了能量轉速率。
  14. This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe

    為此,本文開展了以下研究工作:綜述了四探針技術的分類以及應用范圍;對方形四探針測試技術進行了研究,利用rymaszewski法自動消除探針縱向游影響的優點,將它應用於方形探針測試法中,並對探針游對改進rymaszewski法測試結果的影響進行了深入探討,提出了用圖像識別技術監測測試進行的方法;完成了測試系統的測試平臺以及測試電路的設計,研製出具有圖像識別功能的斜置式方形探針分析儀一臺,實現了矽片電阻率測試的自動化;對圖像識別過程中涉及到的圖像增強和值選擇問題進行了論述,最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整,保證了方形探針測試儀的測試精度。
  15. We analyzed the polarizing character, threshold condition, raman shift of srs in different polarizing pumping light. in addition, the empirical formulas on stimulated raman scattering are given. theoretical analyses and experimental results are in good agreement

    對它們在不同偏振態泵浦光激勵下各級stokes的偏振特性、值條件、喇曼頻等各參數進行了分析,並給出了經驗公式,其結果和實驗數據符合良好。
  16. First, we think periodicity and weakening surge of the nonlinear waveform is caused by self - excitation of the circuit. the electric field thresholds ( et ) and maintenance field ( es ) of lock - on are modulated by the ac electric field ; the nonlinear waveform became two main modes of trans - electron oscillator, namely delay polar domain mode and quenched dipole domain mode

    指出非線性波形周期性的減幅振蕩,是由於光電導開關所處電路自激振蕩形成的交流場對偶極疇的值電場e _ t和維持電場e _ s進行控制,從而形成轉電子振蕩器的兩種主要工作模式:延遲偶極疇模式和猝滅偶極疇模式。
  17. Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity

    Mosfet值電壓漂輻照效應輻照敏感性
  18. The research is mostly concentrated on the spectrum quality of srs in the birefringence fiber, then making a systematic analysis of srs both in experiment and in theory, at the end of the paper drawing some conclusions

    其次在實驗上和理論上對雙折射光纖中的受激喇曼散射的光譜特性進行了系統研究,分析了各級喇曼譜的頻,譜寬和各級喇曼譜的值。
  19. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型,用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件值,漏電流,跨導和場效應遷率的影響。
  20. After installation completes, if any resource including sql server fails for any reason, resources are either restarted on the same node, or the group moves to an available failover cluster node, depending on the failover cluster threshold configuration

    安裝完成後,如果由於任何原因而導致任何資源(包括sql server )出現故障,則將在同一節點上重新啟動資源或者組動到可用的故障轉群集節點,具體取決于故障轉群集值配置。
分享友人