閾電流密度 的英文怎麼說

中文拼音 [yùdiànliúmìdù]
閾電流密度 英文
threshold current density
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  3. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  4. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  5. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  6. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
  7. Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output

    在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
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