限流閾 的英文怎麼說

中文拼音 [xiànliúyù]
限流閾 英文
current limiting threshold
  • 限 : Ⅰ名詞（指定的范圍; 限度） limit; bounds Ⅱ動詞（指定范圍, 不許超過） set a limit; limit; restrict
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  1. In this thesis, we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration. we discussed mainly the gain, differential gain, threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function

    本文闡述了si基光發射材料的研究進展及它在硅基光電子集成中的重要地位，從三維受限量子點的分立能級和函數狀的態密度分佈入手，著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
  2. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  3. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  4. All the power devices including main switches and auxiliary switches are in soft - switching condition ( zvs or zcs ), while the freewheeling diodes are turned off in zero current condition. besides, the control of resonance between inductance and capacitor can be easily realized without needing of setting the threshold values of the inductance current

    該電路中主開關和輔助開關均滿足zvs或zcs條件，續流二極體也工作在軟關斷方式，並且電感和電容之間的諧振控制不需要設定電感電流閾值，控制邏輯簡單，可實現四象限運行。
  5. Current limiting threshold

    限流閾值
  6. The character of threshold voltage in vlsi circuit is analyzed. it can make a serious effect on power dissipation and performance. an algorithm based on partition is designed to choose the most favorable working voltage and threshold

    在低電壓電路中，既要使電路實現正常的開關，又必須限制延時和亞閾值漏電流的急劇增加，就必須認真地選擇工作電壓和閾值電壓。
  7. It is shown that substrate current is not the good indication of hot carrier effect in sde structures and using a threshold degradation criterion to characterize device degradation is not suitable for sde structures. third, the effect of the sde implant dose on the hot carrier immunity is thoroughly studied

    在此基礎上，指出採用峰值襯底電流評估sde結構器件可靠性的局限性，以及在採用i - v特性測試方法研究sde結構器件的熱載流子效應時，閾值電壓作為退化判據所存在的問題。
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