陷阱模型 的英文怎麼說

中文拼音 [xiànjǐngmóxíng]
陷阱模型 英文
trap model
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 陷阱 : pitfall; pit; trap; gin; deadfall; snare
  • 模型 : 1 （仿製實物） model; pattern 2 （制砂型的工具） mould; pattern3 （模子） model set; mould patter...
  1. The fourth is that the study on the enterprise product mix adjustment from the side of theory is scarce and fragmentary, immethodical. according to the existing problems, this thesis tries to take individual enterprise as the object of study and research the tactics and methods of enterprise product mix adjustment, and the models of enterprise product mix adjustment and whose effect factors, and trap enterprise may encounter in the course of enterprise product mix adjusting and tactics to elude them

    針對上述存在的這些問題，本論文試圖從微觀層次上以單個企業為研究對象，對企業產品結構調整的具體策略及途徑進行完整系統的探討，並對企業產品結構的模型及其選擇的影響因素，企業在進行產品結構調整過程中可能遇到的陷阱及規避的策略等實際問題進行深入的分析。
  2. Relevant theories of classical economics include adam smith ’ s viewpoint about capital and harrod - domar growth model. relevant theories of development economics include r. nurkse ’ s theory of vicious circle of poverty, w. w. rostow ’ s theory of the stages of economic growth, lewis - fei - ranis model, and nalson ’ s theory of low - level equilibrium trap. financial theories on development include goldsmith ’ s theory of financial structure, and mckinnon & shaw ’ s theory of financial deepening

    古典經濟學的相關理論主要包括亞當?斯密的資本理論和哈羅德-多馬增長模型;發展經濟學的相關理論主要包括納克斯的「貧困惡性循環」理論、羅斯托的經濟增長階段理論、劉易斯的二元經濟理論和納爾遜的「低水平的均衡陷阱」論;金融發展理論主要包括戈德史密斯的金融結構論以及麥金農和肖的金融深化論。
  3. Analyses of application traps of sem

    結構方程模型應用陷阱分析
  4. The effect of the traps in the epitaxial layer is analyzed using the medici simulator and shockley - read ? hall model, which indicates the ppc is independent of the traps in the epitaxial layer

    利用medici模擬軟體和shockley - read - hall模型研究了體內陷阱對ppc效應的影響，結果表明體內陷阱與ppc效應無關系。
  5. To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density

    本文首次建立了晶界勢壘高度與伏安特性參數之間的關系，提出了陷阱效應在沖擊老化過程的作用模型，引入了「臨界陷阱電荷密度」的概念。
  6. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  7. A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

    通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。
  8. The corba - > snmp gateway is the core of the model, the main functions implemented are : 1 ) mapping variables based snmp mib specifications to corba idl interfaces and dynamically creating object references for these idl interfaces. 2 ) converting the operation to properties of the idl interfaces to snmp request messages and the snmp result messages to return values of the operation. 3 ) listening on the specified port for snmp traps / notifications, and converting the snmp notification messages to omg notification service based events, the corba - based managers subscribe with the event channels for omg notification service based events interested in

    Corba - > snmp網關是該模型的核心，主要實現以下功能：完成以變量為核心的snmpmib到以對象為核心的corbaidl介面之間的轉換，並動態為idl介面生成對象引用；將對介面中屬性的操作轉換為snmp請求消息並把snmp代理方返回的消息轉換成操作的返回值；監聽snmp陷阱和通知埠，並將snmp通知消息轉換為omg事件， corba管理方通過事件通道注冊所感興趣的omg事件。
  9. This model described relationship of current collapse and traps in buffer layer, and the normalized product of electron mobility and 2deg density with and without current collapses was 0. 95 vgs

    該模型描述了電流崩塌效應與緩沖層中陷阱的相互關系，並獲得了電流崩塌前後遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。
  10. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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