陷阱模態 的英文怎麼說
中文拼音 [xiànjǐngmótài]
陷阱模態
英文
trapping mode- 陷 : Ⅰ名詞1 (陷阱) pitfall; trap2 (缺點) defect; deficiency Ⅱ動詞1 (掉進) get stuck or bogged do...
- 阱 : 名詞(捕野獸用的陷坑) trap; pitfall; pit
- 模 : 模名詞1. (模子) mould; pattern; matrix 2. (姓氏) a surname
- 態 : 名詞1. (形狀; 狀態) form; condition; appearance 2. [物理學] (物質結構的狀態或階段) state 3. [語言學] (一種語法范疇) voice
- 陷阱 : pitfall; pit; trap; gin; deadfall; snare
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Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood
我們通過載流子在漏極附加陷阱態勢壘的輸運模型,解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states
通過求解一維電流連續性方程和傳輸方程,同時考慮表面態陷阱的作用,建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。The corba - > snmp gateway is the core of the model, the main functions implemented are : 1 ) mapping variables based snmp mib specifications to corba idl interfaces and dynamically creating object references for these idl interfaces. 2 ) converting the operation to properties of the idl interfaces to snmp request messages and the snmp result messages to return values of the operation. 3 ) listening on the specified port for snmp traps / notifications, and converting the snmp notification messages to omg notification service based events, the corba - based managers subscribe with the event channels for omg notification service based events interested in
Corba - > snmp網關是該模型的核心,主要實現以下功能:完成以變量為核心的snmpmib到以對象為核心的corbaidl介面之間的轉換,並動態為idl介面生成對象引用;將對介面中屬性的操作轉換為snmp請求消息並把snmp代理方返回的消息轉換成操作的返回值;監聽snmp陷阱和通知埠,並將snmp通知消息轉換為omg事件, corba管理方通過事件通道注冊所感興趣的omg事件。Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too
首先,對有關輻照效應的理論進行了簡要的敘述,介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型,另外,還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。分享友人