陷阱深度 的英文怎麼說

中文拼音 [xiànjǐngshēndù]
陷阱深度 英文
trap depth
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 深 : Ⅰ形容詞1 （從上到下或從外到里的距離大） deep 2 （深奧） difficult; profound 3 （深刻; 深入） thor...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 陷阱 : pitfall; pit; trap; gin; deadfall; snare
  • 深度 : 1. （深淺程度） degree of depth; depth 2. （觸及事物本質的程度） profundity; depth
  1. Some company offers too many variable commissions to understand. it is not good news to distributors. the complicated plan makes distributors hard to show the plan to potential customers

    許多傳銷公司的獎金制度洋洋灑灑博大精深，造成許多傳銷商不容易理解，也不容易復制說明經營推展，甚至在其中陷阱又多，容易造成紛爭。
  2. Frequency factor is linear to trap depth

    頻率因子與陷阱深度呈近似線形關系。
  3. On this condition, based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique, the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated. through the optimization of simulating parameters, not only the cross - section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained

    在此基礎上，以微波吸收介電譜檢測技術的實驗結果為依據，對摻有k _ 4fe （ cn ） _ 6的agcl立方體微晶在室溫下的曝光過程進行了模擬，通過調節模擬參數，不但計算出由摻雜劑引入的淺電子陷阱的俘獲截面和陷阱深度，而且得到了這種摻雜乳劑的最佳摻雜濃度。
  4. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  5. Due to different trap depths, physical reactions and chemical reactions, space charge in frp rod materials had different polarities and densities is influenced by temperature evidently, especially between 20 and 40 and between 100 and 120

    由於陷阱深度的不同和物理、化學變化的作用，不同溫度下芯棒材料內空間電荷的積聚極性和積聚量不同，特別是在20和40之間以及100和120之間存在明顯變化。
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