陽電性 的英文怎麼說

中文拼音 [yángdiànxìng]
陽電性 英文
electropositivity
  • : Ⅰ名詞1 (太陽; 日光) the sun 2 (山的南面; 水的北面) south of a hill or north of a river 3 (中...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
  1. Measurement procedures for electrical characteristics of astronautic solar cells

    航天用太能測試方法
  2. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫( ito )是一種高簡並的n型半導體,由於具有導,可見光高透過率,紅外反射,穩定的化學,被廣泛應用於熱反射建築玻璃、抗靜塗層,太池,熱發射鏡,平板顯示器和液晶顯示屏,傳感器,有機光致二級管( oled )等方面,國內外對高質量的ito薄膜的制備和應用進行了深入的研究,但是很少有ito納米粒子與高分子材料復合的報道。
  3. At present, the solar cells used on space aircrafts are still mainly si and gaas solar cells. however, the radiation resistance ability of these two materials is poor. since the photoelectric conversion efficiency attenuates rapidly with the radiation, the lifetime of si and gaas solar cells is short and their stability is not satisfied for space applications at van allen belt

    目前國內外用於航天器上的太池主要為si和gaas太池,但這兩種材料的抗輻射能力較差,其光轉換效率由於高空輻射衰減很快,因而壽命短,穩定差,不能滿足用於vanallen強輻射帶的空間應用需要。
  4. The sc -, mc -, and nc - si solar cells, therefore, reinforce each other in performances, which could be exploited to construct a hybrid pv system with lower cost in view of the well - balanced set of system performance. 2

    2 .太池最大功率跟蹤技術的研究硅太池的輸出特隨著日照強度和池溫度的不同會發生改變,為了獲得實時的最大輸出功率,在混合型太池發系統中必須包括最大功率跟蹤器。
  5. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ,激子束縛能為60mev ,具備了室溫下發射紫外光的必要條件,在紫外探測器、 led 、 ld等領域有著巨大的發展潛力; zno薄膜以其優良的壓能、透明導能等使其在太池、壓器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  6. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光質,而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定高,在氫等離子體環境中具有很高的化學穩定,不易導致太池材料活降低。
  7. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太池製作的工藝以及聚光太池組件的研究。首先,介紹了國內外太池的研究現狀及應用情況;其次,運用太池基本原理討論影響池轉換效率的因素,分析了級聯池的伏安特;隨后,討論了cainp _ 2 / gaas / ge雙結級聯池的結構設計理念,研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太池材料的工藝過程,解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題;然後總結了級聯池的后工藝製作;最後,研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝,設計並安裝完成新型聚光太池組件。
  8. 4. through the galvanostatic charge / discharge experiments with different schedules, it was found that mn ( ) / mn ( ) in acidic media as half - cell in a novel redox flow system is practically feasible in that it has such advantages as low cost, high open voltage, a certain coulombic efficiency with low charge / discharge current, and long cycling life. in the second part, cosn alloy and cu - sn samples were synthesized firstly by h2 - reduction following solid - state reaction between co ( ii ) 、 cu ( ii ) 、 sn ( iv ) 、 and naoh at ambient temperature

    並研究了其分別作為鋰離子極材料在1mol / llipf6 / ec + dmc解液中的恆流充放能,各樣品均存在較大的首次不可逆容量損失; 10個循環內cu - sn可逆放容量可保持在280mah / g以上,而第十周時cosn 、 cu6sn5的可逆放容量分別為50mah / g和60mah / g 。
  9. In the second one, we firstly compared two kinds of solar cells in industry and analyzed their junction depth and doping concentration

    第二部分研究了p - n結及鋁背場對太池特的影響。
  10. As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc

    由於以hf + hno _ 3 + h _ 2o為溶液各向同腐蝕與矽片的摻雜濃度有關,結合生產太池的實際需要,本文重點研究了阻率1 . cm左右的多晶硅的腐蝕情況,結果如下: ( 1 )反射特在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅池的絨面,其反射率降到了5 . 7 。
  11. General rules for measurements of electrical characteristics of amorphous silicon solar cells

    非晶硅太能測試的一般規定
  12. It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell

    本文的主要內容是介紹晶體硅太池選擇擴散新工藝和表面鈍化的理論研究。
  13. The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation

    通過多孔硅重磷擴散鈍化及低頻等離子體氫鈍化等多晶硅太池晶界鈍化,改善了太能。
  14. Analysis of influence of znte insertion layer on cdte solar cell parameters

    碲化鋅插入層對碲化鎘太能參數影響的分析
  15. Owing to its optoelectronic and chemical properties, cdte is an ideal absorber material for high - efficiency, lowcost polycrystalline thin film

    碲化鎘( cdte )具有良好的光質和化學質,因此成為制備高效率、低成本的多晶薄膜太池理想的吸收層材料。
  16. Measurements of the electrical properties of transmitting tubes - measuring methods of anode ion current

    發射管能測試方法極離子流的測試方法
  17. Measurements of the electrical properties of transmitting tubes - measuring methods of maximum anode dissipation power and anode overload dissipation power

    發射管能測試方法極最大耗散功率和極過載耗散功率的測試方法
  18. For this purpose, 2, 5 - diaminobenzene sulphonic acid ( dabsa ) [ c6h3 ( nh2 ) 2so3h ] can be selected as one monomer of ip reaction. the other monomer can be trimesoyl chloride ( tmc ) [ c6h3 ( coc1 ) 3 ]. in order to introduce the cationic group into membrane, 4 - ( chloromethyl ) benzoyl chloride ( cmbc ) [ ch2c1c6h4 ( coc1 ) ] could be added into organic phase ( tmc ) and used for chemical modification after ip process based on the reaction between 4 - ( chloromethyl ) benzoyl chloride and trimethylamine ( tma )

    為了引入離子交換基團,本文採用2 , 5 -二胺基苯磺酸作為界面聚合的無機相單體;為了引入陰離子交換基團,在均苯三甲酰氯有機相單體中加入一定量的4 -氯甲基苯酰氯,並考慮在無機相中加入適量的聚乙烯亞胺( pei )以增加其正荷
  19. The intention of the paper is to study the deposition and properties of znte ( znte : cu ) polycrystalline thin films and to apply znte ( znte : cu ) as a complex back contact layer between cdte and metal electrode to obtain ohm contact and high efficiency cdte solar cells

    本論文目的在於研究znte ( znte : cu )多晶薄膜的制備和質,並把znte znte : cu多晶薄膜作為復合背接觸層應用於cdte和背金屬極之間以獲得歐姆接觸和高效cdte太池。
  20. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太能的影響、表面和界面復合速度的理論表達式;研究得到了減反射膜對太池短路流增量比的極限;建立了太池光譜響應、柵線極接觸阻和少子壽命等測試系統。
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