隙寬 的英文怎麼說

中文拼音 [xìkuān]
隙寬 英文
gap length
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  1. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  2. On the basis of analyzing the actual way of classification of unloading zones, the author puts forward a divisiory way of adopting joint rate, opening joint rate and summation of joint width as quantitative indexes according to formation mechanism and geological exhibition of unloading zones

    在分析目前卸荷帶劃分方法的基礎上，根據卸荷帶的形成機理及地質表現，提出了用裂隙率、張開裂隙率和「隙寬和」 3個量化指標進行卸荷帶的劃分。
  3. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  4. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  5. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  6. However, space of ventral junctions between the cells was conspicuous. lymphocytes ' s going through the epithelium was facilitated by the broad inicrcellular space in the dismal rmall intestine and larg intestine

    但細胞連接面的中下部間隙明顯，尤其在小腸後段和大腸段，細胞間隙寬大，有利於淋巴細胞的進出。
  7. Influence of slot width on transmission properties of frequency selective surfaces

    縫隙寬度對頻率選擇表面透波特性的影響
  8. In this dissertation, the author presents a model of transforming element fracture net into element equivalent hydraulic conductivity tensor. this model can effectively reflect the obvious anisotropy and non - homogeneity of fracture rock seepage and makes it easier to simulate the various aperture fissure and display the fundamental characteristics of discrete fissure net. in addition, the model is can also make the best use of the sound theoretic foundation of equivalent continuum model

    < wp = 5 > 5 、本文提出將單元裂隙網路轉化為等效單元滲透張量的裂隙網路轉換模型（單元網路模型） ，具有真正體現裂隙巖體滲流明顯的各向異性和顯著的非均質性、易於模擬變隙寬裂隙、基本顯示巖體裂隙網路滲流的基本特點、充分利用連續介質模型雄厚的理論基礎等特點。
  9. The system possesses dynamic range of scores of millimeters and focusing time of five seconds and repeatability of seven microns and measurement precision of microns level

    聚焦范圍可達幾十毫米，聚焦時間為5秒鐘，重復精度為7 。裝配間隙寬度測量的精度為微米級。
  10. According to the experiment of influences of fiber structures and the width of edge channel on flow filling, it was found that even a small gap ( l or 2mm ) between the preform and the mold edge could also disrupt the flow pattern, which evidently changed the local permeability of preform. the filling process was simulated using the permeability for different edge width predicted by a. hammami or poiseuille model, which shown good agreement with the experiment results

    實驗研究了纖維鋪層結構及流道縫隙的寬度對充模流動的影響，發現在纖維預成型體和模具壁間存在的較小的縫隙也會對邊緣的流動產生干擾，進而影響增強材料主體的滲透；對于不同的縫隙寬度，分別根據a . hammami模型和poiseuille模型預測邊緣等效滲透率，並進行充模過程數值模擬，與實驗結果吻合較好。
  11. The main results are : grinding is favorable to improve surface smooth degree, while nitrided and slow deposition makes sic granules fine ; the width of coatings gap increased in order of grinding, nitrided and vacuum heat treatment, but gap defects in multilayer coatings could be removed by slow deposition ; temperature of maximum weight loss could be decrease to 600 by grinding, vacuum heat treatment or slow deposition, but it will increased to 800 after nitrided ; oxidation kinetics curves all varied with the coating modifications

    主要有：磨削改性有利於提高塗層表面平整度，氮化和慢沉積使塗層表面顆粒細化。塗層間隙寬度按磨削改性、高溫氮化、真空熱處理依次增大，而慢沉積可獲得無面缺陷的多層塗層。磨削改性、真空熱處理及慢沉積均使最大氧化失重溫度點提前至600 ，而高溫氮化則使最大失重點后移至800 。
  12. Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field

    Zno ，作為一種直接帶隙寬禁帶半導體材料，是繼gan之後光電研究領域又一熱門的研究課題。
  13. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  14. By using the aperture curve and roughness curve, the author of the dissertation has put forward the concepts of frequency hydraulic aperture and frequency roughness for the first time. of the two concepts, the first or frequency hydraulic aperture has got some advantages of its own in the seepage analysis

    3 、本文首次利用寬配和糙配曲線，提出頻率隙寬和頻率粗糙度的概念，特別是頻率水力隙寬的提出，為解決現有隙寬應用中出現的局限性具有極大的幫助作用。
  15. When x 0. 36, the alloy thin films keep the wurtzite structure. and the band gap could be varied from 3. 40 ev to 3. 93 ev. the mg0. 05zn0. 95o and mg0. 15zn0. 85o alloys with wurtzite structure show high thermal stability up to 1000

    研究表明當x的取值小於等於0 . 36時，合金薄膜會保持zno六角形纖鋅礦結構，此時薄膜的能隙寬度可以在3 . 4ev到3 . 93ev之間調節。
  16. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  17. According to the existing studies of the basic law of fracture seepage, there are two sharp contrastive relations between seepage discharge and aperture : super - cubic and sub - cubic. similarly, there are also two opposite relations between seepage discharge and relative roughness : positive and negative relations

    2 、現有的裂隙滲流基本規律的研究成果中，滲流量與隙寬出現兩種截然相反的關系：超立方和次立方關系；滲流量與相對粗糙度也存在兩種相反的關系：正相關和負相關關系。
  18. The paper also analyzes synthetically the effects of some smooth filters prior to image segmentation and indicates that gaussian lowpass filter, a alterable scale filter, is a good choice to establish a balance between the reservation of image details and removal of noise. on the basis of current investigation of actuality and trend of image segmentation at home and abroad, the paper adopts marr operator, called by optimal edge detection to improve greatly efficiency of image segmentation and edge abstract. the sparse edge

    論文在分析當前圖象分割的現狀和趨勢的基礎上，採用被稱為最佳邊緣檢測運算元的marr演算法，使圖象分割和邊緣提取的準確性得到了很大的提高；利用人機交互輔助的方法來搜索已經檢出的稀疏邊緣點，並用最小二乘法擬合這些邊緣點，使裝配間隙寬度的測量的精度和準確性得到了極大的保證。
  19. The subst - itutional oxygen vacancies and tin contributing to its high conductivity. the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )

    Ito結構中的氧空位和錫摻雜使得它具有很強的導電性，較大的能帶間隙寬度（ e _ g 3ev ）使得它具有很強的光透明性。
  20. Zinc oxide is a ii - vi wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure

    氧化鋅（ zno ）是一種具有六方結構的?族寬帶隙半導體材料，室溫下帶隙寬度高達3 . 3ev 。
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